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Title: Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Abstract

This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. Furthermore, this device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Pennsylvania State University, University Park, PA (United States)
Publication Date:
Research Org.:
Pennsylvania State Univ., University Park, PA (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1671634
Grant/Contract Number:  
AR0001008
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Electron Device Letters
Additional Journal Information:
Journal Volume: 41; Journal Issue: 12; Journal ID: ISSN 0741-3106
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; Gallium nitride; power semiconductor devices; super junction; Schottky barrier diode; dynamic on-resistance

Citation Formats

Han, Sang-Woo, Song, Jianan, Yoo, Sang Ha, Ma, Ziguang, Lavelle, Robert M., Snyder, David W., Redwing, Joan M., Jackson, Thomas N., and Chu, Rongming. Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching. United States: N. p., 2020. Web. https://doi.org/10.1109/led.2020.3029619.
Han, Sang-Woo, Song, Jianan, Yoo, Sang Ha, Ma, Ziguang, Lavelle, Robert M., Snyder, David W., Redwing, Joan M., Jackson, Thomas N., & Chu, Rongming. Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching. United States. https://doi.org/10.1109/led.2020.3029619
Han, Sang-Woo, Song, Jianan, Yoo, Sang Ha, Ma, Ziguang, Lavelle, Robert M., Snyder, David W., Redwing, Joan M., Jackson, Thomas N., and Chu, Rongming. Thu . "Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching". United States. https://doi.org/10.1109/led.2020.3029619.
@article{osti_1671634,
title = {Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching},
author = {Han, Sang-Woo and Song, Jianan and Yoo, Sang Ha and Ma, Ziguang and Lavelle, Robert M. and Snyder, David W. and Redwing, Joan M. and Jackson, Thomas N. and Chu, Rongming},
abstractNote = {This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. Furthermore, this device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.},
doi = {10.1109/led.2020.3029619},
journal = {IEEE Electron Device Letters},
number = 12,
volume = 41,
place = {United States},
year = {2020},
month = {10}
}

Journal Article:
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This content will become publicly available on October 8, 2021
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