The Role of Metal-Semiconductor Interface in Hybrid Perovskite Devices for High-Performance Radiation Photon Counting
Abstract
Halide perovskites are promising optoelectronic semiconductors. For applications in solid-state detectors that operate in low photon flux counting mode, blocking interfaces are essential to minimize the dark current noise. Here, we investigate the interface between methylammonium lead tri-iodide (MAPbI3) single crystals and commonly used high and low work function metals to achieve photon counting capabilities in a solid-state detector. Using scanning photocurrent microscopy, we observe a large Schottky barrier at the MAPbI3/Pb interface, which efficiently blocks dark current. Moreover, the shape of the photocurrent profile indicates that the MAPbI3 single-crystal surface has a deep fermi level close to that of Au. Rationalized by first-principle calculations, we attribute this observation to the defects due to excess iodine on the surface underpinning emergence of deep band-edge states. The photocurrent decay profile yields a charge carrier diffusion length of 10–25 μm. Using this knowledge, we demonstrate a single-crystal MAPbI3 detector that can count single γ-ray photons by producing sharp electrical pulses with a fast rise time of <2 μs. Overall, our study indicates that the interface plays a crucial role in solid-state detectors operating in photon counting mode.
- Authors:
-
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Univ. of California San Diego, La Jolla, CA (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1671095
- Report Number(s):
- LA-UR-20-21817
Journal ID: ISSN 1944-8244
- Grant/Contract Number:
- 89233218CNA000001
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 40; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Perovskite; scanning photocurrent microscopy; metal-semiconductor interface; Schottky junction; solid-state detector; photonics; interfaces; gold; defects
Citation Formats
Shrestha, Shreetu, Tsai, Hsinhan, Yoho, Michael, Ghosh, Dibyajyoti, Liu, Fangze, Lei, Yusheng, Tisdale, Jeremy, Baldwin, Jon, Xu, Sheng, Neukirch, Amanda J., Tretiak, Sergei, Vo, Duc, and Nie, Wanyi. The Role of Metal-Semiconductor Interface in Hybrid Perovskite Devices for High-Performance Radiation Photon Counting. United States: N. p., 2020.
Web. doi:10.1021/acsami.0c11805.
Shrestha, Shreetu, Tsai, Hsinhan, Yoho, Michael, Ghosh, Dibyajyoti, Liu, Fangze, Lei, Yusheng, Tisdale, Jeremy, Baldwin, Jon, Xu, Sheng, Neukirch, Amanda J., Tretiak, Sergei, Vo, Duc, & Nie, Wanyi. The Role of Metal-Semiconductor Interface in Hybrid Perovskite Devices for High-Performance Radiation Photon Counting. United States. https://doi.org/10.1021/acsami.0c11805
Shrestha, Shreetu, Tsai, Hsinhan, Yoho, Michael, Ghosh, Dibyajyoti, Liu, Fangze, Lei, Yusheng, Tisdale, Jeremy, Baldwin, Jon, Xu, Sheng, Neukirch, Amanda J., Tretiak, Sergei, Vo, Duc, and Nie, Wanyi. Fri .
"The Role of Metal-Semiconductor Interface in Hybrid Perovskite Devices for High-Performance Radiation Photon Counting". United States. https://doi.org/10.1021/acsami.0c11805. https://www.osti.gov/servlets/purl/1671095.
@article{osti_1671095,
title = {The Role of Metal-Semiconductor Interface in Hybrid Perovskite Devices for High-Performance Radiation Photon Counting},
author = {Shrestha, Shreetu and Tsai, Hsinhan and Yoho, Michael and Ghosh, Dibyajyoti and Liu, Fangze and Lei, Yusheng and Tisdale, Jeremy and Baldwin, Jon and Xu, Sheng and Neukirch, Amanda J. and Tretiak, Sergei and Vo, Duc and Nie, Wanyi},
abstractNote = {Halide perovskites are promising optoelectronic semiconductors. For applications in solid-state detectors that operate in low photon flux counting mode, blocking interfaces are essential to minimize the dark current noise. Here, we investigate the interface between methylammonium lead tri-iodide (MAPbI3) single crystals and commonly used high and low work function metals to achieve photon counting capabilities in a solid-state detector. Using scanning photocurrent microscopy, we observe a large Schottky barrier at the MAPbI3/Pb interface, which efficiently blocks dark current. Moreover, the shape of the photocurrent profile indicates that the MAPbI3 single-crystal surface has a deep fermi level close to that of Au. Rationalized by first-principle calculations, we attribute this observation to the defects due to excess iodine on the surface underpinning emergence of deep band-edge states. The photocurrent decay profile yields a charge carrier diffusion length of 10–25 μm. Using this knowledge, we demonstrate a single-crystal MAPbI3 detector that can count single γ-ray photons by producing sharp electrical pulses with a fast rise time of <2 μs. Overall, our study indicates that the interface plays a crucial role in solid-state detectors operating in photon counting mode.},
doi = {10.1021/acsami.0c11805},
journal = {ACS Applied Materials and Interfaces},
number = 40,
volume = 12,
place = {United States},
year = {Fri Sep 04 00:00:00 EDT 2020},
month = {Fri Sep 04 00:00:00 EDT 2020}
}
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