Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy

Journal Article · 30 July 2020 · Microscopy and Microanalysis

DOI: https://doi.org/10.1017/s1431927620018371 · OSTI ID:1670186

Lu, Ping ^[1]; Anderson, Evan ^[1]; Schmucker, Scott ^[1]; Pena, Fabian ^[1]; Frederick, Esther ^[1]; Ivie, Jeffrey ^[1]; Bussmann, Ezra ^[1]; Lopez, Deanna ^[1]; Tracy, Lisa ^[1]; Lu, Tzu-Ming ^[1]; Wang, George ^[1]; Ward, Daniel ^[1]; Misra, Shashank ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The structural and chemical characterization at the atomic-scale plays a critical role in understanding the structure-property relationship in precise electrical devices such as those produced by atomic-precision advanced manufacturing (APAM). APAM, utilizing hydrogen lithography in a scanning tunneling microscope, offers a potential pathway to ultra-efficient transistors, and has been developed to produce phosphorus (P)-based donor devices integrated into bare Si substrates. Structural characterization of the buried, Si with P dopant (Si:P) delta-layer in the devices by scanning transmission electron microscopy (STEM), however, is a challenge due to similar atomic number and low concentration of the P dopants. In this paper, we describe several efforts of utilizing advanced STEM imagining and spectroscopic techniques to quantify the Si:P deltalayers. STEM imaging combining low-angle and high-angle annular dark-field (LAADF, HAADF) detectors as well as atomic-scale elemental mapping using energy-dispersive X-ray spectroscopy (EDS) are used to reveal the P and defect distribution across the delta-layer processed under various thermal conditions.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: AC04-94AL85000; NA0003525
• OSTI ID: 1670186
• Report Number(s): SAND--2020-6485J; 686900
• Journal Information: Microscopy and Microanalysis, Journal Name: Microscopy and Microanalysis Journal Issue: S2 Vol. 26; ISSN 1431-9276
• Publisher: Microscopy Society of America (MSA)Copyright Statement
• Country of Publication: United States
• Language: English