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Title: Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy

Abstract

The structural and chemical characterization at the atomic-scale plays a critical role in understanding the structure-property relationship in precise electrical devices such as those produced by atomic-precision advanced manufacturing (APAM). APAM, utilizing hydrogen lithography in a scanning tunneling microscope, offers a potential pathway to ultra-efficient transistors, and has been developed to produce phosphorus (P)-based donor devices integrated into bare Si substrates. Structural characterization of the buried, Si with P dopant (Si:P) delta-layer in the devices by scanning transmission electron microscopy (STEM), however, is a challenge due to similar atomic number and low concentration of the P dopants. In this paper, we describe several efforts of utilizing advanced STEM imagining and spectroscopic techniques to quantify the Si:P deltalayers. STEM imaging combining low-angle and high-angle annular dark-field (LAADF, HAADF) detectors as well as atomic-scale elemental mapping using energy-dispersive X-ray spectroscopy (EDS) are used to reveal the P and defect distribution across the delta-layer processed under various thermal conditions.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1670186
Report Number(s):
SAND-2020-6485J
Journal ID: ISSN 1431-9276; 686900
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Microscopy and Microanalysis
Additional Journal Information:
Journal Volume: 26; Journal Issue: S2; Journal ID: ISSN 1431-9276
Publisher:
Microscopy Society of America (MSA)
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Lu, Ping, Anderson, Evan, Schmucker, Scott, Pena, Fabian, Frederick, Esther, Ivie, Jeffrey, Bussmann, Ezra, Lopez, Deanna, Tracy, Lisa, Lu, Tzu-Ming, Wang, George, Ward, Daniel, and Misra, Shashank. Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy. United States: N. p., 2020. Web. https://doi.org/10.1017/s1431927620018371.
Lu, Ping, Anderson, Evan, Schmucker, Scott, Pena, Fabian, Frederick, Esther, Ivie, Jeffrey, Bussmann, Ezra, Lopez, Deanna, Tracy, Lisa, Lu, Tzu-Ming, Wang, George, Ward, Daniel, & Misra, Shashank. Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy. United States. https://doi.org/10.1017/s1431927620018371
Lu, Ping, Anderson, Evan, Schmucker, Scott, Pena, Fabian, Frederick, Esther, Ivie, Jeffrey, Bussmann, Ezra, Lopez, Deanna, Tracy, Lisa, Lu, Tzu-Ming, Wang, George, Ward, Daniel, and Misra, Shashank. Thu . "Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy". United States. https://doi.org/10.1017/s1431927620018371. https://www.osti.gov/servlets/purl/1670186.
@article{osti_1670186,
title = {Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy},
author = {Lu, Ping and Anderson, Evan and Schmucker, Scott and Pena, Fabian and Frederick, Esther and Ivie, Jeffrey and Bussmann, Ezra and Lopez, Deanna and Tracy, Lisa and Lu, Tzu-Ming and Wang, George and Ward, Daniel and Misra, Shashank},
abstractNote = {The structural and chemical characterization at the atomic-scale plays a critical role in understanding the structure-property relationship in precise electrical devices such as those produced by atomic-precision advanced manufacturing (APAM). APAM, utilizing hydrogen lithography in a scanning tunneling microscope, offers a potential pathway to ultra-efficient transistors, and has been developed to produce phosphorus (P)-based donor devices integrated into bare Si substrates. Structural characterization of the buried, Si with P dopant (Si:P) delta-layer in the devices by scanning transmission electron microscopy (STEM), however, is a challenge due to similar atomic number and low concentration of the P dopants. In this paper, we describe several efforts of utilizing advanced STEM imagining and spectroscopic techniques to quantify the Si:P deltalayers. STEM imaging combining low-angle and high-angle annular dark-field (LAADF, HAADF) detectors as well as atomic-scale elemental mapping using energy-dispersive X-ray spectroscopy (EDS) are used to reveal the P and defect distribution across the delta-layer processed under various thermal conditions.},
doi = {10.1017/s1431927620018371},
journal = {Microscopy and Microanalysis},
number = S2,
volume = 26,
place = {United States},
year = {2020},
month = {7}
}

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Works referenced in this record:

Chemical Quantification of Atomic-Scale EDS Maps under Thin Specimen Conditions
journal, October 2014


Atomic-scale Chemical Imaging and Quantification of Metallic Alloy Structures by Energy-Dispersive X-ray Spectroscopy
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