Transition from electron accumulation to depletion at $β$-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

Swallow, J. N.; Varley, J. B.; Jones, L. H.; Gibbon, J. T.; Piper, L. J.; Dhanak, V. R.; Veal, T. D.

doi:10.1063/1.5054091

Title: Transition from electron accumulation to depletion at $$β$$-Ga₂O₃ surfaces: The role of hydrogen and the charge neutrality level

Journal Article · 12 February 2019 · APL Materials

DOI: https://doi.org/10.1063/1.5054091 · OSTI ID:1668503

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^[3]; Dhanak, V. R. ^[1];

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Univ. of Liverpool (United Kingdom)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Binghamton Univ., NY (United States)

The surface electronic properties of bulk-grown $$β$$-Ga₂O₃ ($$\overline{2}01$$) single crystals are investigated. The band gap is found using optical transmission to be 4.68 eV. High-resolution x-ray photoemission coupled with hybrid density functional theory calculation of the valence band density of states provides insights into the surface band bending. Importantly, the standard linear extrapolation method for determining the surface valence band maximum (VBM) binding energy is found to underestimate the separation from the Fermi level by ~0.5 eV. According to our interpretation, most reports of surface electron depletion and upward band bending based on photoemission spectroscopy actually provide evidence of surface electron accumulation. For uncleaned surfaces, the surface VBM to Fermi level separation is found to be 4.95 ± 0.10 eV, corresponding to downward band bending of ~0.24 eV and an electron accumulation layer with a sheet density of ~5 × 10¹² cm^–2. Uncleaned surfaces possess hydrogen termination which acts as surface donors, creating electron accumulation and downward band bending at the surface. In situ cleaning by thermal annealing removes H from the surface, resulting in a ~0.5 eV shift of the surface VBM and formation of a surface electron depletion layer with upward band bending of ~0.26 eV due to native acceptor surface states. These results are discussed in the context of the charge neutrality level, calculated bulk interstitial hydrogen transition levels, and related previous experimental findings.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Advanced Manufacturing Office; Engineering and Physical Sciences Resource Council (EPSRC); US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1668503

Report Number(s):: LLNL-JRNL--811560; 1018203

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 2 Vol. 7; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (81)

Group-III Sesquioxides: Growth, Physical Properties and Devices von Wenckstern, Holger Advanced Electronic Materials, Vol. 3, Issue 9 https://doi.org/10.1002/aelm.201600350	journal	July 2017
A Modified Local Density Approximation. Electron Density in Inversion Layers Paasch, G.; Übensee, H. physica status solidi (b), Vol. 113, Issue 1 https://doi.org/10.1002/pssb.2221130116	journal	September 1982
A novel self-consistent theory of the electronic structure of inversion layers in InSb MIS structures Zöllner, J. -P.; Übensee, H.; Paasch, G. physica status solidi (b), Vol. 134, Issue 2 https://doi.org/10.1002/pssb.2221340245	journal	April 1986
H2-induced changes in electrical conductance of ?-Ga2O3 thin-film systems Fleischer, M.; Giber, J.; Meixner, H. Applied Physics A Solids and Surfaces, Vol. 54, Issue 6 https://doi.org/10.1007/bf00324340	journal	June 1992
Polar surfaces of zinc oxide crystals Heiland, G.; Kunstmann, P. Surface Science, Vol. 13, Issue 1 https://doi.org/10.1016/0039-6028(69)90237-4	journal	January 1969
Accumulation layer model for Ga2O3 thin-film gas sensors based on the Volkenstein theory of catalysis Geistlinger, Helmut Sensors and Actuators B: Chemical, Vol. 18, Issue 1-3 https://doi.org/10.1016/0925-4005(94)87070-5	journal	March 1994
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
Surface properties of annealed semiconducting β-Ga2O3 (1 0 0) single crystals for epitaxy Navarro-Quezada, A.; Galazka, Z.; Alamé, S. Applied Surface Science, Vol. 349 https://doi.org/10.1016/j.apsusc.2015.04.225	journal	September 2015
Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3–GaN interfaces by X-ray photoelectron spectroscopy Lay, T. S.; Liao, Y. Y.; Hung, W. H. Journal of Crystal Growth, Vol. 278, Issue 1-4 https://doi.org/10.1016/j.jcrysgro.2004.12.128	journal	May 2005
Inversion and accumulation layers at InN surfaces Veal, T. D.; Piper, L. F. J.; Schaff, W. J. Journal of Crystal Growth, Vol. 288, Issue 2 https://doi.org/10.1016/j.jcrysgro.2005.12.100	journal	March 2006
The surface and materials science of tin oxide Batzill, Matthias; Diebold, Ulrike Progress in Surface Science, Vol. 79, Issue 2-4, p. 47-154 https://doi.org/10.1016/j.progsurf.2005.09.002	journal	January 2005
Ga2O3 thin films for high-temperature gas sensors Ogita, M.; Saika, N.; Nakanishi, Y. Applied Surface Science, Vol. 142, Issue 1-4 https://doi.org/10.1016/s0169-4332(98)00714-4	journal	April 1999
Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS ₂ , and Sn ₂ S ₃ : Experiment and Theory Whittles, Thomas J.; Burton, Lee A.; Skelton, Jonathan M. Chemistry of Materials, Vol. 28, Issue 11 https://doi.org/10.1021/acs.chemmater.6b00397	journal	May 2016
Tungsten Incorporation into Gallium Oxide: Crystal Structure, Surface and Interface Chemistry, Thermal Stability, and Interdiffusion Rubio, E. J.; Mates, T. E.; Manandhar, S. The Journal of Physical Chemistry C, Vol. 120, Issue 47 https://doi.org/10.1021/acs.jpcc.6b05487	journal	November 2016
Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications Sheng, Jiazhen; Park, Eun Jung; Shong, Bonggeun ACS Applied Materials & Interfaces, Vol. 9, Issue 28 https://doi.org/10.1021/acsami.7b04985	journal	July 2017
Phase separation in metal solutions and expanded fluid metals Edwards, Peter P.; Sienko, M. J. Journal of the American Chemical Society, Vol. 103, Issue 11 https://doi.org/10.1021/ja00401a010	journal	June 1981
Stability of the Surface Electron Accumulation Layers on the Nonpolar (101̅0) and (112̅0) Faces of ZnO Heinhold, Robert; Cooil, Simon P.; Evans, D. Andrew The Journal of Physical Chemistry C, Vol. 118, Issue 42 https://doi.org/10.1021/jp507820m	journal	October 2014
Universal alignment of hydrogen levels in semiconductors, insulators and solutions Van de Walle, Chris G.; Neugebauer, J. Nature, Vol. 423, Issue 6940 https://doi.org/10.1038/nature01665	journal	June 2003
High-resolution X-ray luminescence extension imaging Ou, Xiangyu; Qin, Xian; Huang, Bolong Nature, Vol. 590, Issue 7846 https://doi.org/10.1038/s41586-021-03251-6	journal	February 2021
Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect Tatemizo, Nobuyuki; Imada, Saki; Okahara, Kizuna Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-58835-5	journal	February 2020
Amphoteric native defects in semiconductors Walukiewicz, W. Applied Physics Letters, Vol. 54, Issue 21 https://doi.org/10.1063/1.101174	journal	May 1989
Anisotropy of electrical and optical properties in β-Ga2O3 single crystals Ueda, Naoyuki; Hosono, Hideo; Waseda, Ryuta Applied Physics Letters, Vol. 71, Issue 7 https://doi.org/10.1063/1.119693	journal	August 1997
Optical properties of gallium oxide thin films Rebien, M.; Henrion, W.; Hong, M. Applied Physics Letters, Vol. 81, Issue 2 https://doi.org/10.1063/1.1491613	journal	July 2002
Hybrid functionals based on a screened Coulomb potential Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias The Journal of Chemical Physics, Vol. 118, Issue 18 https://doi.org/10.1063/1.1564060	journal	May 2003
Optical properties of gallium oxide films deposited by electron-beam evaporation Al-Kuhaili, M. F.; Durrani, S. M. A.; Khawaja, E. E. Applied Physics Letters, Vol. 83, Issue 22 https://doi.org/10.1063/1.1630845	journal	December 2003
Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)] Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias The Journal of Chemical Physics, Vol. 124, Issue 21 https://doi.org/10.1063/1.2204597	journal	June 2006
Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors Kokubun, Yoshihiro; Miura, Kasumi; Endo, Fumie Applied Physics Letters, Vol. 90, Issue 3 https://doi.org/10.1063/1.2432946	journal	January 2007
Electronic structures and doping of SnO2, CuAlO2, and CuInO2 Falabretti, Barbara; Robertson, John Journal of Applied Physics, Vol. 102, Issue 12 https://doi.org/10.1063/1.2822274	journal	December 2007
Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy Veal, T. D.; King, P. D. C.; Hatfield, S. A. Applied Physics Letters, Vol. 93, Issue 20 https://doi.org/10.1063/1.3032911	journal	November 2008
Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100) Lovejoy, T. C.; Yitamben, E. N.; Shamir, N. Applied Physics Letters, Vol. 94, Issue 8 https://doi.org/10.1063/1.3086392	journal	February 2009
Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films Nagata, Takahiro; Bierwagen, Oliver; White, Mark E. Journal of Applied Physics, Vol. 107, Issue 3 https://doi.org/10.1063/1.3298467	journal	February 2010
Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity King, P. D. C.; McKenzie, I.; Veal, T. D. Applied Physics Letters, Vol. 96, Issue 6 https://doi.org/10.1063/1.3309694	journal	February 2010
Oxygen vacancies and donor impurities in β-Ga2O3 Varley, J. B.; Weber, J. R.; Janotti, A. Applied Physics Letters, Vol. 97, Issue 14 https://doi.org/10.1063/1.3499306	journal	October 2010
The electronic structure of β-Ga2O3 Mohamed, M.; Janowitz, C.; Unger, I. Applied Physics Letters, Vol. 97, Issue 21 https://doi.org/10.1063/1.3521255	journal	November 2010
Hydrogen impurities and native defects in CdO Amini, M. N.; Saniz, R.; Lamoen, D. Journal of Applied Physics, Vol. 110, Issue 6 https://doi.org/10.1063/1.3641971	journal	September 2011
Band bending and surface defects in β -Ga ₂ O ₃ Lovejoy, T. C.; Chen, Renyu; Zheng, X. Applied Physics Letters, Vol. 100, Issue 18 https://doi.org/10.1063/1.4711014	journal	April 2012
Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films Ramana, C. V.; Rubio, E. J.; Barraza, C. D. Journal of Applied Physics, Vol. 115, Issue 4 https://doi.org/10.1063/1.4862186	journal	January 2014
Behaviour of hydrogen in wide band gap oxides Li, H.; Robertson, J. Journal of Applied Physics, Vol. 115, Issue 20 https://doi.org/10.1063/1.4878415	journal	May 2014
Deuterium incorporation and diffusivity in plasma-exposed bulk Ga ₂ O ₃ Ahn, Shihyun; Ren, F.; Patrick, Erin Applied Physics Letters, Vol. 109, Issue 24 https://doi.org/10.1063/1.4972265	journal	December 2016
Sub-band-gap absorption in Ga ₂ O ₃ Peelaers, Hartwin; Van de Walle, Chris G. Applied Physics Letters, Vol. 111, Issue 18 https://doi.org/10.1063/1.5001323	journal	October 2017
A review of Ga ₂ O ₃ materials, processing, and devices Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H. Applied Physics Reviews, Vol. 5, Issue 1 https://doi.org/10.1063/1.5006941	journal	March 2018
Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect Knight, Sean; Mock, Alyssa; Korlacki, Rafał Applied Physics Letters, Vol. 112, Issue 1 https://doi.org/10.1063/1.5011192	journal	January 2018
Iron and intrinsic deep level states in Ga ₂ O ₃ Ingebrigtsen, M. E.; Varley, J. B.; Kuznetsov, A. Yu. Applied Physics Letters, Vol. 112, Issue 4 https://doi.org/10.1063/1.5020134	journal	January 2018
Structural and electronic properties of Ga ₂ O ₃ -Al ₂ O ₃ alloys Peelaers, Hartwin; Varley, Joel B.; Speck, James S. Applied Physics Letters, Vol. 112, Issue 24 https://doi.org/10.1063/1.5036991	journal	June 2018
Band alignment of In ₂ O ₃ /β-Ga ₂ O ₃ interface determined by X-ray photoelectron spectroscopy Sun, Shun-Ming; Liu, Wen-Jun; Wang, Yong-Ping Applied Physics Letters, Vol. 113, Issue 3 https://doi.org/10.1063/1.5038615	journal	July 2018
Recent progress in Ga ₂ O ₃ power devices Higashiwaki, Masataka; Sasaki, Kohei; Murakami, Hisashi Semiconductor Science and Technology, Vol. 31, Issue 3 https://doi.org/10.1088/0268-1242/31/3/034001	journal	January 2016
Hydrogenated cation vacancies in semiconducting oxides Varley, J. B.; Peelaers, H.; Janotti, A. Journal of Physics: Condensed Matter, Vol. 23, Issue 33 https://doi.org/10.1088/0953-8984/23/33/334212	journal	August 2011
Conductivity in transparent oxide semiconductors King, P. D. C.; Veal, T. D. Journal of Physics: Condensed Matter, Vol. 23, Issue 33 https://doi.org/10.1088/0953-8984/23/33/334214	journal	August 2011
Electrical conductivity of In ₂ O ₃ and Ga ₂ O ₃ after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level Vines, L.; Bhoodoo, C.; von Wenckstern, H. Journal of Physics: Condensed Matter, Vol. 30, Issue 2 https://doi.org/10.1088/1361-648x/aa9e2a	journal	December 2017
The surface band structure of β-Ga ₂ O ₃ Mohamed, M.; Unger, I.; Janowitz, C. Journal of Physics: Conference Series, Vol. 286 https://doi.org/10.1088/1742-6596/286/1/012027	journal	March 2011
Mechanism of Fermi-level stabilization in semiconductors Walukiewicz, W. Physical Review B, Vol. 37, Issue 9 https://doi.org/10.1103/physrevb.37.4760	journal	March 1988
Projector augmented-wave method Blöchl, P. E. Physical Review B, Vol. 50, Issue 24, p. 17953-17979 https://doi.org/10.1103/physrevb.50.17953	journal	December 1994
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/physrevb.54.11169	journal	October 1996
Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors King, P. D. C.; Veal, T. D.; Jefferson, P. H. Physical Review B, Vol. 77, Issue 4 https://doi.org/10.1103/physrevb.77.045316	journal	January 2008
Nonparabolic coupled Poisson-Schrödinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces King, P. D. C.; Veal, T. D.; McConville, C. F. Physical Review B, Vol. 77, Issue 12 https://doi.org/10.1103/physrevb.77.125305	journal	March 2008
Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy Piper, L. F. J.; Colakerol, Leyla; King, P. D. C. Physical Review B, Vol. 78, Issue 16 https://doi.org/10.1103/physrevb.78.165127	journal	October 2008
Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO King, P. D. C.; Veal, T. D.; Jefferson, P. H. Physical Review B, Vol. 79, Issue 3 https://doi.org/10.1103/physrevb.79.035203	journal	January 2009
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3 King, P. D. C.; Veal, T. D.; Fuchs, F. Physical Review B, Vol. 79, Issue 20 https://doi.org/10.1103/physrevb.79.205211	journal	May 2009
Shallow donor state of hydrogen in In 2 O 3 and SnO 2 : Implications for conductivity in transparent conducting oxides King, P. D. C.; Lichti, R. L.; Celebi, Y. G. Physical Review B, Vol. 80, Issue 8 https://doi.org/10.1103/physrevb.80.081201	journal	August 2009
Hydrogen doping in indium oxide: An ab initio study Limpijumnong, Sukit; Reunchan, Pakpoom; Janotti, Anderson Physical Review B, Vol. 80, Issue 19 https://doi.org/10.1103/physrevb.80.193202	journal	November 2009
Bulk transport measurements in ZnO: The effect of surface electron layers Allen, M. W.; Swartz, C. H.; Myers, T. H. Physical Review B, Vol. 81, Issue 7 https://doi.org/10.1103/physrevb.81.075211	journal	February 2010
Direct evidence of metallicity at ZnO ( 000 1 ¯ ) − ( 1 × 1 ) surfaces from angle-resolved photoemission spectroscopy Piper, L. F. J.; Preston, A. R. H.; Fedorov, A. Physical Review B, Vol. 81, Issue 23 https://doi.org/10.1103/physrevb.81.233305	journal	June 2010
Influence of polarity and hydroxyl termination on the band bending at ZnO surfaces Heinhold, R.; Williams, G. T.; Cooil, S. P. Physical Review B, Vol. 88, Issue 23 https://doi.org/10.1103/physrevb.88.235315	journal	December 2013
Valence-band density of states and surface electron accumulation in epitaxial SnO 2 films Vasheghani Farahani, S. K.; Veal, T. D.; Mudd, J. J. Physical Review B, Vol. 90, Issue 15 https://doi.org/10.1103/physrevb.90.155413	journal	October 2014
Near valence-band electronic properties of semiconducting β − Ga 2 O 3 (100) single crystals Navarro-Quezada, A.; Alamé, S.; Esser, N. Physical Review B, Vol. 92, Issue 19 https://doi.org/10.1103/physrevb.92.195306	journal	November 2015
Dipole analysis of the dielectric function of color dispersive materials: Application to monoclinic Ga 2 O 3 Sturm, C.; Schmidt-Grund, R.; Kranert, C. Physical Review B, Vol. 94, Issue 3 https://doi.org/10.1103/physrevb.94.035148	journal	July 2016
Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β − Ga 2 O 3 Mock, Alyssa; Korlacki, Rafał; Briley, Chad Physical Review B, Vol. 96, Issue 24 https://doi.org/10.1103/physrevb.96.245205	journal	December 2017
Surface Electron Accumulation and the Charge Neutrality Level in In 2 O 3 King, P. D. C.; Veal, T. D.; Payne, D. J. Physical Review Letters, Vol. 101, Issue 11 https://doi.org/10.1103/physrevlett.101.116808	journal	September 2008
Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations Freysoldt, Christoph; Neugebauer, Jörg; Van de Walle, Chris G. Physical Review Letters, Vol. 102, Issue 1 https://doi.org/10.1103/physrevlett.102.016402	journal	January 2009
Microscopic Origin of Electron Accumulation in In 2 O 3 Zhang, K. H. L.; Egdell, R. G.; Offi, F. Physical Review Letters, Vol. 110, Issue 5 https://doi.org/10.1103/physrevlett.110.056803	journal	January 2013
Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials Kraut, E. A.; Grant, R. W.; Waldrop, J. R. Physical Review Letters, Vol. 44, Issue 24 https://doi.org/10.1103/physrevlett.44.1620	journal	June 1980
Schottky Barrier Heights and the Continuum of Gap States Tersoff, J. Physical Review Letters, Vol. 52, Issue 12 https://doi.org/10.1103/physrevlett.52.1054.3	journal	March 1984
Schottky Barrier Heights and the Continuum of Gap States Tersoff, J. Physical Review Letters, Vol. 52, Issue 6 https://doi.org/10.1103/physrevlett.52.465	journal	February 1984
Intrinsic Electron Accumulation at Clean InN Surfaces Mahboob, I.; Veal, T. D.; McConville, C. F. Physical Review Letters, Vol. 92, Issue 3 https://doi.org/10.1103/physrevlett.92.036804	journal	January 2004
A Comparative Study on the Electrical Properties of Vertical ( $\bar{\sf2}01$ ) and (010) $\beta$ -Ga 2 O 3 Schottky Barrier Diodes on EFG Single-Crystal Substrates Fu, Houqiang; Chen, Hong; Huang, Xuanqi IEEE Transactions on Electron Devices, Vol. 65, Issue 8 https://doi.org/10.1109/ted.2018.2841904	journal	August 2018
Electronic properties of irradiated semiconductors. A model of the fermi level pinning Brudnyi, V. N.; Grinyaev, S. N.; Kolin, N. G. Semiconductors, Vol. 37, Issue 5 https://doi.org/10.1134/1.1575357	journal	May 2003
Growth of β-Ga ₂ O ₃ Single Crystals by the Edge-Defined, Film Fed Growth Method Aida, Hideo; Nishiguchi, Kengo; Takeda, Hidetoshi Japanese Journal of Applied Physics, Vol. 47, Issue 11 https://doi.org/10.1143/jjap.47.8506	journal	November 2008
Thermal Stability of Implanted or Plasma Exposed Deuterium in Single Crystal Ga ₂ O ₃ Ahn, Shihyun; Ren, F.; Patrick, Erin ECS Journal of Solid State Science and Technology, Vol. 6, Issue 2 https://doi.org/10.1149/2.0051702jss	journal	September 2016
Temperature and doping concentration dependence of the energy band gap in β-Ga_2O_3 thin films grown on sapphire Rafique, Subrina; Han, Lu; Mou, Shin Optical Materials Express, Vol. 7, Issue 10 https://doi.org/10.1364/ome.7.003561	journal	January 2017
Polarity-dependent photoemission of in situ cleaved zinc oxide single crystals Heinhold, Robert; Allen, Martin Ward Journal of Materials Research, Vol. 27, Issue 17 https://doi.org/10.1557/jmr.2012.181	journal	July 2012
Theoretical photoionization cross sections from 1 to 1500 keV. Scofield, J. H. https://doi.org/10.2172/4545040	report	January 1973

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Title: Transition from electron accumulation to depletion at $$β$$-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

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Title: Transition from electron accumulation to depletion at $$β$$-Ga₂O₃ surfaces: The role of hydrogen and the charge neutrality level