Antiferromagnetic semiconductor Eu3Sn2P4 with Sn–Sn dimer and crown-wrapped Eu

Blawat, Joanna; Swatek, Przemyslaw; Gui, Xin; Jin, Rongying; Xie, Weiwei

doi:10.1039/c9tc03557e

Title: Antiferromagnetic semiconductor Eu₃Sn₂P₄ with Sn–Sn dimer and crown-wrapped Eu

Journal Article · 31 December 2018 · Journal of Materials Chemistry C

DOI: https://doi.org/10.1039/c9tc03557e · OSTI ID:1668264

Blawat, Joanna ^[1]; Swatek, Przemyslaw ^[2]; Gui, Xin ^[1]; Jin, Rongying ^[1];

^[1]

Louisiana State Univ., Baton Rouge, LA (United States)
Ames Lab., and Iowa State Univ., Ames, IA (United States); Polish Academy of Sciences, Wroclaw (Poland). Inst. of Low Temperature and Structure Research

A novel antiferromagnetic semiconductor, Eu₃Sn₂P₄, has been discovered. Single crystals of Eu₃Sn₂P₄ were prepared using the Sn self-flux method. The crystal structure determined by single crystal X-ray diffraction shows that Eu₃Sn₂P₄ crystallizes in the orthorhombic structure with the space group Cmca (Pearson Symbol, oP216). Furthermore, six Sn–Sn dimers connected by P atoms form a Sn₁₂P₂₄ crown-shaped cluster with a Eu atom located in the center. Magnetization measurements indicate that the system orders antiferromagnetically below a T_N ~14 K at a low field and undergoes a metamagnetic transition at a high field when T < T_N. The effective magnetic moment is 7.41(3) μ_B per Eu, corresponding to Eu²⁺. The electric resistivity reveals a non-monotonic temperature dependence with non-metallic behavior below ~60 K, consistent with the band structure calculations. By fitting the data using the thermally activated resistivity formula, we estimate the energy gap to be ~0.14 eV. Below T_N, the resistivity tends to saturate, suggesting the reduction of charge-spin scattering.

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Research Organization:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: National Science Foundation (NSF); State of Louisiana-Board of Regents Research Competitiveness Subprogram (RCS); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-07CH11358; SC0016315

OSTI ID:: 1668264

Report Number(s):: IS-J--10,065

Journal Information:: Journal of Materials Chemistry C, Journal Name: Journal of Materials Chemistry C Journal Issue: 40 Vol. 7; ISSN 2050-7526

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Antiferromagnetic semiconductor Eu₃Sn₂P₄ with Sn–Sn dimer and crown-wrapped Eu