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Title: Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

Abstract

Plasma etching of p-type GaN creates n-type nitrogen vacancy (VN) defects at the etched surface, which can be detrimental to device performance. In mesa isolated diodes, etch damage on the sidewalls degrades the ideality factor and leakage current. Here a treatment was developed to recover both the ideality factor and leakage current, which uses UV/O3 treatment to oxidize the damaged layers followed by HF etching to remove them. The temperature dependent I–V measurement shows that the reverse leakage transport mechanism is dominated by Poole–Frenkel emission at room temperature through the etch-induced VN defect. Depth resolved cathodoluminescence confirms that the damage is limited to first several nanometers and is consistent with the VN defect.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [2]; ORCiD logo [3]; ORCiD logo [4]; ORCiD logo [1];  [1]
  1. Naval Research Lab. (NRL), Washington, DC (United States)
  2. The Ohio State Univ., Columbus, OH (United States). Dept. of Physics
  3. The Ohio State Univ., Columbus, OH (United States). Dept. of Physics and Dept. of Electrical and Computer Engineering
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); US Department of the Navy, Office of Naval Research (ONR); US Air Force Office of Scientific Research (AFOSR); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1667419
Report Number(s):
SAND-2020-9081J
Journal ID: ISSN 0003-6951; 690271
Grant/Contract Number:  
AC04-94AL85000; FA9550-18-1-0066; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 117; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
luminescence; depth profiling techniques; cathodoluminescence spectroscopy; electrical properties and parameters; plasma processing; poole-frenkel effect; chemical impurities; semiconductors; crystallographic defects; photoluminescence spectroscopy

Citation Formats

Foster, Geoffrey M., Koehler, Andrew, Ebrish, Mona, Gallagher, James, Anderson, Travis, Noesges, Brenton, Brillson, Leonard, Gunning, Brendan, Hobart, Karl D., and Kub, Francis. Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments. United States: N. p., 2020. Web. doi:10.1063/5.0021153.
Foster, Geoffrey M., Koehler, Andrew, Ebrish, Mona, Gallagher, James, Anderson, Travis, Noesges, Brenton, Brillson, Leonard, Gunning, Brendan, Hobart, Karl D., & Kub, Francis. Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments. United States. doi:10.1063/5.0021153.
Foster, Geoffrey M., Koehler, Andrew, Ebrish, Mona, Gallagher, James, Anderson, Travis, Noesges, Brenton, Brillson, Leonard, Gunning, Brendan, Hobart, Karl D., and Kub, Francis. Fri . "Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments". United States. doi:10.1063/5.0021153.
@article{osti_1667419,
title = {Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments},
author = {Foster, Geoffrey M. and Koehler, Andrew and Ebrish, Mona and Gallagher, James and Anderson, Travis and Noesges, Brenton and Brillson, Leonard and Gunning, Brendan and Hobart, Karl D. and Kub, Francis},
abstractNote = {Plasma etching of p-type GaN creates n-type nitrogen vacancy (VN) defects at the etched surface, which can be detrimental to device performance. In mesa isolated diodes, etch damage on the sidewalls degrades the ideality factor and leakage current. Here a treatment was developed to recover both the ideality factor and leakage current, which uses UV/O3 treatment to oxidize the damaged layers followed by HF etching to remove them. The temperature dependent I–V measurement shows that the reverse leakage transport mechanism is dominated by Poole–Frenkel emission at room temperature through the etch-induced VN defect. Depth resolved cathodoluminescence confirms that the damage is limited to first several nanometers and is consistent with the VN defect.},
doi = {10.1063/5.0021153},
journal = {Applied Physics Letters},
number = 8,
volume = 117,
place = {United States},
year = {2020},
month = {8}
}

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