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Title: The 2020 UV emitter roadmap

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Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1661736
Alternate Identifier(s):
OSTI ID: 1661738
Grant/Contract Number:  
SC0011883; N62909-17-1-2004
Resource Type:
Published Article
Journal Name:
Journal of Physics. D, Applied Physics
Additional Journal Information:
Journal Name: Journal of Physics. D, Applied Physics Journal Volume: 53 Journal Issue: 50; Journal ID: ISSN 0022-3727
Publisher:
IOP Publishing
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Amano, Hiroshi, Collazo, Ramón, Santi, Carlo De, Einfeldt, Sven, Funato, Mitsuru, Glaab, Johannes, Hagedorn, Sylvia, Hirano, Akira, Hirayama, Hideki, Ishii, Ryota, Kashima, Yukio, Kawakami, Yoichi, Kirste, Ronny, Kneissl, Michael, Martin, Robert, Mehnke, Frank, Meneghini, Matteo, Ougazzaden, Abdallah, Parbrook, Peter J., Rajan, Siddharth, Reddy, Pramod, Römer, Friedhard, Ruschel, Jan, Sarkar, Biplab, Scholz, Ferdinand, Schowalter, Leo J., Shields, Philip, Sitar, Zlatko, Sulmoni, Luca, Wang, Tao, Wernicke, Tim, Weyers, Markus, Witzigmann, Bernd, Wu, Yuh-Renn, Wunderer, Thomas, and Zhang, Yuewei. The 2020 UV emitter roadmap. United Kingdom: N. p., 2020. Web. https://doi.org/10.1088/1361-6463/aba64c.
Amano, Hiroshi, Collazo, Ramón, Santi, Carlo De, Einfeldt, Sven, Funato, Mitsuru, Glaab, Johannes, Hagedorn, Sylvia, Hirano, Akira, Hirayama, Hideki, Ishii, Ryota, Kashima, Yukio, Kawakami, Yoichi, Kirste, Ronny, Kneissl, Michael, Martin, Robert, Mehnke, Frank, Meneghini, Matteo, Ougazzaden, Abdallah, Parbrook, Peter J., Rajan, Siddharth, Reddy, Pramod, Römer, Friedhard, Ruschel, Jan, Sarkar, Biplab, Scholz, Ferdinand, Schowalter, Leo J., Shields, Philip, Sitar, Zlatko, Sulmoni, Luca, Wang, Tao, Wernicke, Tim, Weyers, Markus, Witzigmann, Bernd, Wu, Yuh-Renn, Wunderer, Thomas, & Zhang, Yuewei. The 2020 UV emitter roadmap. United Kingdom. https://doi.org/10.1088/1361-6463/aba64c
Amano, Hiroshi, Collazo, Ramón, Santi, Carlo De, Einfeldt, Sven, Funato, Mitsuru, Glaab, Johannes, Hagedorn, Sylvia, Hirano, Akira, Hirayama, Hideki, Ishii, Ryota, Kashima, Yukio, Kawakami, Yoichi, Kirste, Ronny, Kneissl, Michael, Martin, Robert, Mehnke, Frank, Meneghini, Matteo, Ougazzaden, Abdallah, Parbrook, Peter J., Rajan, Siddharth, Reddy, Pramod, Römer, Friedhard, Ruschel, Jan, Sarkar, Biplab, Scholz, Ferdinand, Schowalter, Leo J., Shields, Philip, Sitar, Zlatko, Sulmoni, Luca, Wang, Tao, Wernicke, Tim, Weyers, Markus, Witzigmann, Bernd, Wu, Yuh-Renn, Wunderer, Thomas, and Zhang, Yuewei. Wed . "The 2020 UV emitter roadmap". United Kingdom. https://doi.org/10.1088/1361-6463/aba64c.
@article{osti_1661736,
title = {The 2020 UV emitter roadmap},
author = {Amano, Hiroshi and Collazo, Ramón and Santi, Carlo De and Einfeldt, Sven and Funato, Mitsuru and Glaab, Johannes and Hagedorn, Sylvia and Hirano, Akira and Hirayama, Hideki and Ishii, Ryota and Kashima, Yukio and Kawakami, Yoichi and Kirste, Ronny and Kneissl, Michael and Martin, Robert and Mehnke, Frank and Meneghini, Matteo and Ougazzaden, Abdallah and Parbrook, Peter J. and Rajan, Siddharth and Reddy, Pramod and Römer, Friedhard and Ruschel, Jan and Sarkar, Biplab and Scholz, Ferdinand and Schowalter, Leo J. and Shields, Philip and Sitar, Zlatko and Sulmoni, Luca and Wang, Tao and Wernicke, Tim and Weyers, Markus and Witzigmann, Bernd and Wu, Yuh-Renn and Wunderer, Thomas and Zhang, Yuewei},
abstractNote = {},
doi = {10.1088/1361-6463/aba64c},
journal = {Journal of Physics. D, Applied Physics},
number = 50,
volume = 53,
place = {United Kingdom},
year = {2020},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1088/1361-6463/aba64c

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Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
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High-output-power deep ultraviolet light-emitting diode assembly using direct bonding
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The Best of pss
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MOVPE Growth of Smooth and Homogeneous Al 0.8 Ga 0.2 N:Si Superlattices as UVC Laser Cladding Layers
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Seeded PVT Growth of Aluminum Nitride on Silicon Carbide
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Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering
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AlGaN/GaN quantum well ultraviolet light emitting diodes
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Defect-Related Degradation of AlGaN-Based UV-B LEDs
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Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
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Doping of AlGaN Alloys
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Thin-film flip-chip UVB LEDs realized by electrochemical etching
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The role of chemical potential in compensation control in Si:AlGaN
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MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
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Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures
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Effects of plasma treatment on the Ohmic characteristics of Ti∕Al∕Ti∕Au contacts to n-AlGaN
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Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN
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E-beam pumped mid-UV sources based on MBE-grown AlGaN MQW: Mid-UV sources based on MBE-grown AlGaN MQW
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100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
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High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping
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Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
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Dominant Nonradiative Recombination Paths and Their Activation Processes in Al x Ga 1 x N -related Materials
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Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique
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Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen
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Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm
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Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps
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Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output
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High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy
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Investigation of Boron Containing AlN and AlGaN Layers Grown by MOVPE
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The role of surface kinetics on composition and quality of AlGaN
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Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
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Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
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(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates
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Effect of the GaN:Mg Contact Layer on the Light-Output and Current-Voltage Characteristic of UVB LEDs
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Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes
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Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure
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Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes
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A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
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Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire
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Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
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MOVPE grown periodic AlN/BAlN heterostructure with high boron content
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BAlN thin layers for deep UV applications: BAlN thin layers for deep UV applications
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Deep-UV transparent bulk single-crystalline AlN substrates
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270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
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Point-Defect Nature of the Ultraviolet Absorption Band in AlN
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