Long interior carrier lifetime in selective-area InAs nanowires on silicon

Zhang, Kailing; Li, Xinxin; Walhof, Alexander C.; Liu, Yuzi; Toor, Fatima; Prineas, John P.

doi:10.1364/OME.403531

Title: Long interior carrier lifetime in selective-area InAs nanowires on silicon

Abstract

Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pump-probe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior were resolved and characterized. NWs grown using SAE demonstrated high optical quality, showing minority carrier lifetimes more than two-fold longer than that of the randomly-positioned (RP) NWs. The extracted SAE-InAs NW interior recombination lifetime was found to be as long as 7.2 ns , 13X longer than previous measurements on RP-NWs; and the surface recombination velocity 4154 cm · s ^{- 1} . Transmission electron microscopy revealed a high density of stacking defects within the NWs, suggesting that interior recombination lifetime can be further increased by improving NW interior crystalline quality.

Authors:

; Li, Xinxin; Walhof, Alexander C.; Liu, Yuzi;

; Prineas, John P.

Publication Date:: 2020-09-14

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

OSTI Identifier:: 1660328

Alternate Identifier(s):: OSTI ID: 1797927

Grant/Contract Number:: AC02-06CH11357; EPMD-1608714

Resource Type:: Published Article

Journal Name:: Optical Materials Express

Additional Journal Information:: Journal Name: Optical Materials Express Journal Volume: 10 Journal Issue: 10; Journal ID: ISSN 2159-3930

Publisher:: Optical Society of America

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Zhang, Kailing, Li, Xinxin, Walhof, Alexander C., Liu, Yuzi, Toor, Fatima, and Prineas, John P. Long interior carrier lifetime in selective-area InAs nanowires on silicon.  United States: N. p., 2020. 
Web.  doi:10.1364/OME.403531.

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                    Zhang, Kailing, Li, Xinxin, Walhof, Alexander C., Liu, Yuzi, Toor, Fatima, & Prineas, John P. Long interior carrier lifetime in selective-area InAs nanowires on silicon.  United States.  https://doi.org/10.1364/OME.403531

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                    Zhang, Kailing, Li, Xinxin, Walhof, Alexander C., Liu, Yuzi, Toor, Fatima, and Prineas, John P. Mon .  
"Long interior carrier lifetime in selective-area InAs nanowires on silicon".  United States.  https://doi.org/10.1364/OME.403531.

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@article{osti_1660328,

  title        = {Long interior carrier lifetime in selective-area InAs nanowires on silicon},

  author       = {Zhang, Kailing and Li, Xinxin and Walhof, Alexander C. and Liu, Yuzi and Toor, Fatima and Prineas, John P.},

  abstractNote = {Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pump-probe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior were resolved and characterized. NWs grown using SAE demonstrated high optical quality, showing minority carrier lifetimes more than two-fold longer than that of the randomly-positioned (RP) NWs. The extracted SAE-InAs NW interior recombination lifetime was found to be as long as 7.2 ns , 13X longer than previous measurements on RP-NWs; and the surface recombination velocity 4154 cm · s - 1 . Transmission electron microscopy revealed a high density of stacking defects within the NWs, suggesting that interior recombination lifetime can be further increased by improving NW interior crystalline quality.},

  doi          = {10.1364/OME.403531},

  journal      = {Optical Materials Express},

  number       = 10,

  volume       = 10,

  place        = {United States},

  year         = {2020},

  month        = {9}

}

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Title: Long interior carrier lifetime in selective-area InAs nanowires on silicon

Abstract

Citation Formats

Control of InAs Nanowire Growth Directions on Si journal, October 2008

Selective-area growth of III-V nanowires and their applications journal, July 2011

Determination of the wavelength dependence of Auger recombination in long-wavelength quantum-well semiconductor lasers using hydrostatic pressure journal, January 1997

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Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire Arrays journal, September 2014

Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core–Shell Nanowires Grown on Silicon journal, June 2019

Analysis of Optical Absorption in Silicon Nanowire Arrays for Photovoltaic Applications journal, October 2007

Contactless Optical Characterization of Carrier Dynamics in Free-Standing InAs-InAlAs Core–Shell Nanowires on Silicon journal, January 2019

Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks journal, December 2018

Quantum-confinement effects in InAs–InP core–shell nanowires journal, June 2007

Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties journal, March 2017

Minority carrier lifetime in InAs epilayers journal, December 1974

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Indium arsenide nanowire field-effect transistors for pH and biological sensing journal, May 2014

Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates journal, January 2010

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Multi-Colour Nanowire Photonic Crystal Laser Pixels journal, October 2013

In-plane selective area InSb–Al nanowire quantum networks journal, March 2020

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Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes journal, November 2018

Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation journal, June 2012

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Determination of the wavelength dependence of Auger recombination in long-wavelength quantum-well semiconductor lasers using hydrostatic pressure
journal, January 1997

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journal, November 2001

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journal, July 2006

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conference, January 2016

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journal, April 2010

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Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes
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Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires
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Multi-Colour Nanowire Photonic Crystal Laser Pixels
journal, October 2013

In-plane selective area InSb–Al nanowire quantum networks
journal, March 2020

Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon
journal, February 2014

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
journal, April 2013

Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes
journal, November 2018

Removal of Surface States and Recovery of Band-Edge Emission in InAs Nanowires through Surface Passivation
journal, June 2012

Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?
journal, October 2007

Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
journal, February 2015

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires
journal, May 2018

Enhanced Minority Carrier Lifetimes in GaAs/AlGaAs Core–Shell Nanowires through Shell Growth Optimization
journal, October 2013

Ballistic InAs Nanowire Transistors
journal, January 2013

Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer
journal, May 2017

Electron transport in InAs nanowires and heterostructure nanowire devices
journal, September 2004

Bandgap Energy of Wurtzite InAs Nanowires
journal, August 2016

Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays
journal, June 2015

Ultralow Surface Recombination Velocity in InP Nanowires Probed by Terahertz Spectroscopy
journal, September 2012

Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires
journal, March 2018

InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit
journal, January 2013

Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires
journal, December 2014