Long interior carrier lifetime in selective-area InAs nanowires on silicon
Abstract
Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pump-probe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior were resolved and characterized. NWs grown using SAE demonstrated high optical quality, showing minority carrier lifetimes more than two-fold longer than that of the randomly-positioned (RP) NWs. The extracted SAE-InAs NW interior recombination lifetime was found to be as long as 7.2 ns , 13X longer than previous measurements on RP-NWs; and the surface recombination velocity 4154 cm · s - 1 . Transmission electron microscopy revealed a high density of stacking defects within the NWs, suggesting that interior recombination lifetime can be further increased by improving NW interior crystalline quality.
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1660328
- Alternate Identifier(s):
- OSTI ID: 1797927
- Grant/Contract Number:
- AC02-06CH11357; EPMD-1608714
- Resource Type:
- Published Article
- Journal Name:
- Optical Materials Express
- Additional Journal Information:
- Journal Name: Optical Materials Express Journal Volume: 10 Journal Issue: 10; Journal ID: ISSN 2159-3930
- Publisher:
- Optical Society of America
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Zhang, Kailing, Li, Xinxin, Walhof, Alexander C., Liu, Yuzi, Toor, Fatima, and Prineas, John P. Long interior carrier lifetime in selective-area InAs nanowires on silicon. United States: N. p., 2020.
Web. doi:10.1364/OME.403531.
Zhang, Kailing, Li, Xinxin, Walhof, Alexander C., Liu, Yuzi, Toor, Fatima, & Prineas, John P. Long interior carrier lifetime in selective-area InAs nanowires on silicon. United States. https://doi.org/10.1364/OME.403531
Zhang, Kailing, Li, Xinxin, Walhof, Alexander C., Liu, Yuzi, Toor, Fatima, and Prineas, John P. Mon .
"Long interior carrier lifetime in selective-area InAs nanowires on silicon". United States. https://doi.org/10.1364/OME.403531.
@article{osti_1660328,
title = {Long interior carrier lifetime in selective-area InAs nanowires on silicon},
author = {Zhang, Kailing and Li, Xinxin and Walhof, Alexander C. and Liu, Yuzi and Toor, Fatima and Prineas, John P.},
abstractNote = {Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pump-probe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior were resolved and characterized. NWs grown using SAE demonstrated high optical quality, showing minority carrier lifetimes more than two-fold longer than that of the randomly-positioned (RP) NWs. The extracted SAE-InAs NW interior recombination lifetime was found to be as long as 7.2 ns , 13X longer than previous measurements on RP-NWs; and the surface recombination velocity 4154 cm · s - 1 . Transmission electron microscopy revealed a high density of stacking defects within the NWs, suggesting that interior recombination lifetime can be further increased by improving NW interior crystalline quality.},
doi = {10.1364/OME.403531},
journal = {Optical Materials Express},
number = 10,
volume = 10,
place = {United States},
year = {Mon Sep 14 00:00:00 EDT 2020},
month = {Mon Sep 14 00:00:00 EDT 2020}
}
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