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Title: Long interior carrier lifetime in selective-area InAs nanowires on silicon

Abstract

Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pump-probe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior were resolved and characterized. NWs grown using SAE demonstrated high optical quality, showing minority carrier lifetimes more than two-fold longer than that of the randomly-positioned (RP) NWs. The extracted SAE-InAs NW interior recombination lifetime was found to be as long as 7.2 ns, 13X longer than previous measurements on RP-NWs; and the surface recombination velocity 4154 cm · s–1. Transmission electron microscopy revealed a high density of stacking defects within the NWs, suggesting that interior recombination lifetime can be further increased by improving NW interior crystalline quality.

Authors:
ORCiD logo; ; ; ; ORCiD logo;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
OSTI Identifier:
1660328
Alternate Identifier(s):
OSTI ID: 1797927
Grant/Contract Number:  
AC02-06CH11357; EPMD-1608714
Resource Type:
Published Article
Journal Name:
Optical Materials Express
Additional Journal Information:
Journal Name: Optical Materials Express Journal Volume: 10 Journal Issue: 10; Journal ID: ISSN 2159-3930
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zhang, Kailing, Li, Xinxin, Walhof, Alexander C., Liu, Yuzi, Toor, Fatima, and Prineas, John P. Long interior carrier lifetime in selective-area InAs nanowires on silicon. United States: N. p., 2020. Web. https://doi.org/10.1364/OME.403531.
Zhang, Kailing, Li, Xinxin, Walhof, Alexander C., Liu, Yuzi, Toor, Fatima, & Prineas, John P. Long interior carrier lifetime in selective-area InAs nanowires on silicon. United States. https://doi.org/10.1364/OME.403531
Zhang, Kailing, Li, Xinxin, Walhof, Alexander C., Liu, Yuzi, Toor, Fatima, and Prineas, John P. Mon . "Long interior carrier lifetime in selective-area InAs nanowires on silicon". United States. https://doi.org/10.1364/OME.403531.
@article{osti_1660328,
title = {Long interior carrier lifetime in selective-area InAs nanowires on silicon},
author = {Zhang, Kailing and Li, Xinxin and Walhof, Alexander C. and Liu, Yuzi and Toor, Fatima and Prineas, John P.},
abstractNote = {Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pump-probe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior were resolved and characterized. NWs grown using SAE demonstrated high optical quality, showing minority carrier lifetimes more than two-fold longer than that of the randomly-positioned (RP) NWs. The extracted SAE-InAs NW interior recombination lifetime was found to be as long as 7.2 ns, 13X longer than previous measurements on RP-NWs; and the surface recombination velocity 4154 cm · s–1. Transmission electron microscopy revealed a high density of stacking defects within the NWs, suggesting that interior recombination lifetime can be further increased by improving NW interior crystalline quality.},
doi = {10.1364/OME.403531},
journal = {Optical Materials Express},
number = 10,
volume = 10,
place = {United States},
year = {2020},
month = {9}
}

Journal Article:
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https://doi.org/10.1364/OME.403531

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