Improving Low-Bandgap Tin–Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing
Abstract
Low-bandgap Sn/Pb ABX3 perovskites have reached photovoltaic power conversion efficiencies >20%, but they usually have poor stability due to the common use of acidic poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole transport layers and A-site cation compositions containing methylammonium (MA). In this work, we develop a process to enable high-quality MA-free Sn/Pb perovskite films grown using a gas quenching process instead of the conventional antisolvents, which provides improved control of the film growth and eliminates wrinkling. Using this method in a device structure with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) instead of PEDOT:PSS as the hole transport layer, devices can reach efficiencies up to 20%mppt at 0.06 cm2 and up to 17.5%mppt at 1 cm2 active area. With these improvements, the devices are characterized for thermal stability and show 80% of the initial power output remaining after 4000 h at 85 °C.
- Authors:
-
[1];
[2];
[2];
[1]
- Univ. of Colorado, Boulder, CO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Stanford Univ., CA (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; US Department of the Navy, Office of Naval Research (ONR); National Science Foundation (NSF)
- OSTI Identifier:
- 1659847
- Alternate Identifier(s):
- OSTI ID: 1682254; OSTI ID: 1834022; OSTI ID: 1894513
- Report Number(s):
- NREL/JA-5K00-76189
Journal ID: ISSN 2380-8195; MainId:6645;UUID:99010a81-3b57-ea11-9c31-ac162d87dfe5;MainAdminID:13491
- Grant/Contract Number:
- AC36-08GO28308; EE0008551; N00014-17-1-2212; DGE-1656518
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Energy Letters
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 4; Journal ID: ISSN 2380-8195
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; film growth; gas quenching; perovskites; power conversion efficiency; Low-bandgap; stability; perovskite
Citation Formats
Werner, Jérémie, Moot, Taylor, Gossett, Tyler A., Gould, Isaac E., Palmstrom, Axel F., Wolf, Eli J., Boyd, Caleb C., van Hest, Maikel F. A. M., Luther, Joseph M., Berry, Joseph J., and McGehee, Michael D. Improving Low-Bandgap Tin–Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing. United States: N. p., 2020.
Web. doi:10.1021/acsenergylett.0c00255.
Werner, Jérémie, Moot, Taylor, Gossett, Tyler A., Gould, Isaac E., Palmstrom, Axel F., Wolf, Eli J., Boyd, Caleb C., van Hest, Maikel F. A. M., Luther, Joseph M., Berry, Joseph J., & McGehee, Michael D. Improving Low-Bandgap Tin–Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing. United States. https://doi.org/10.1021/acsenergylett.0c00255
Werner, Jérémie, Moot, Taylor, Gossett, Tyler A., Gould, Isaac E., Palmstrom, Axel F., Wolf, Eli J., Boyd, Caleb C., van Hest, Maikel F. A. M., Luther, Joseph M., Berry, Joseph J., and McGehee, Michael D. Tue .
"Improving Low-Bandgap Tin–Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing". United States. https://doi.org/10.1021/acsenergylett.0c00255. https://www.osti.gov/servlets/purl/1659847.
@article{osti_1659847,
title = {Improving Low-Bandgap Tin–Lead Perovskite Solar Cells via Contact Engineering and Gas Quench Processing},
author = {Werner, Jérémie and Moot, Taylor and Gossett, Tyler A. and Gould, Isaac E. and Palmstrom, Axel F. and Wolf, Eli J. and Boyd, Caleb C. and van Hest, Maikel F. A. M. and Luther, Joseph M. and Berry, Joseph J. and McGehee, Michael D.},
abstractNote = {Low-bandgap Sn/Pb ABX3 perovskites have reached photovoltaic power conversion efficiencies >20%, but they usually have poor stability due to the common use of acidic poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole transport layers and A-site cation compositions containing methylammonium (MA). In this work, we develop a process to enable high-quality MA-free Sn/Pb perovskite films grown using a gas quenching process instead of the conventional antisolvents, which provides improved control of the film growth and eliminates wrinkling. Using this method in a device structure with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) instead of PEDOT:PSS as the hole transport layer, devices can reach efficiencies up to 20%mppt at 0.06 cm2 and up to 17.5%mppt at 1 cm2 active area. With these improvements, the devices are characterized for thermal stability and show 80% of the initial power output remaining after 4000 h at 85 °C.},
doi = {10.1021/acsenergylett.0c00255},
journal = {ACS Energy Letters},
number = 4,
volume = 5,
place = {United States},
year = {Tue Mar 17 00:00:00 EDT 2020},
month = {Tue Mar 17 00:00:00 EDT 2020}
}
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