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Title: Using hole injection layers for decreased metastability and higher performance in Cu(In,Ga)Se2 devices

Abstract

In this work, modifications to the buffer structure in Cu(In,Ga)Se2 (CIGS) solar cells are examined in terms of power conversion efficiency and metastability. Varying amounts of thin hole-injecting layers are introduced at different locations in the CIGS/Zn(O,S) device structure. It is found that such layers simultaneously increase performance and decrease metastability. The most effective variant produces devices without metastability and with higher efficiency than the CdS-only controls. The most effective location for hole injection is found to be between the Zn(O,S) buffer and the transparent conductor. At this location, passivation of the CIGS surface is not a function of the hole injection layer, and thus a variety of materials with appropriate band-edge energies should achieve the same purpose.

Authors:
 [1];  [1];  [1];  [1];  [1]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1659811
Alternate Identifier(s):
OSTI ID: 1619826
Report Number(s):
NREL/JA-5K00-75622
Journal ID: ISSN 0927-0248; MainId:6097;UUID:2f0eee99-911b-ea11-9c2a-ac162d87dfe5;MainAdminID:13409
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Solar Energy Materials and Solar Cells
Additional Journal Information:
Journal Volume: 215; Journal ID: ISSN 0927-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CIGS; ZnS; CdS; metastability; efficiency; hole injection; buffer

Citation Formats

Repins, Ingrid, Glynn, Stephen, Bowers, Karen, Stevens, Bart, Perkins, Craig L., and Mansfield, Lorelle. Using hole injection layers for decreased metastability and higher performance in Cu(In,Ga)Se2 devices. United States: N. p., 2020. Web. https://doi.org/10.1016/j.solmat.2020.110597.
Repins, Ingrid, Glynn, Stephen, Bowers, Karen, Stevens, Bart, Perkins, Craig L., & Mansfield, Lorelle. Using hole injection layers for decreased metastability and higher performance in Cu(In,Ga)Se2 devices. United States. https://doi.org/10.1016/j.solmat.2020.110597
Repins, Ingrid, Glynn, Stephen, Bowers, Karen, Stevens, Bart, Perkins, Craig L., and Mansfield, Lorelle. Sun . "Using hole injection layers for decreased metastability and higher performance in Cu(In,Ga)Se2 devices". United States. https://doi.org/10.1016/j.solmat.2020.110597. https://www.osti.gov/servlets/purl/1659811.
@article{osti_1659811,
title = {Using hole injection layers for decreased metastability and higher performance in Cu(In,Ga)Se2 devices},
author = {Repins, Ingrid and Glynn, Stephen and Bowers, Karen and Stevens, Bart and Perkins, Craig L. and Mansfield, Lorelle},
abstractNote = {In this work, modifications to the buffer structure in Cu(In,Ga)Se2 (CIGS) solar cells are examined in terms of power conversion efficiency and metastability. Varying amounts of thin hole-injecting layers are introduced at different locations in the CIGS/Zn(O,S) device structure. It is found that such layers simultaneously increase performance and decrease metastability. The most effective variant produces devices without metastability and with higher efficiency than the CdS-only controls. The most effective location for hole injection is found to be between the Zn(O,S) buffer and the transparent conductor. At this location, passivation of the CIGS surface is not a function of the hole injection layer, and thus a variety of materials with appropriate band-edge energies should achieve the same purpose.},
doi = {10.1016/j.solmat.2020.110597},
journal = {Solar Energy Materials and Solar Cells},
number = ,
volume = 215,
place = {United States},
year = {2020},
month = {5}
}

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