Lateral Heterostructures of Multilayer GeS and SnS van der Waals Crystals

Sutter, Eli; Wang, Jia; Sutter, Peter

doi:10.1021/acsnano.0c05978

Title: Lateral Heterostructures of Multilayer GeS and SnS van der Waals Crystals

Abstract

Engineered heterostructures derive distinct properties from materials integration and interface formation. Two-dimensional crystals have been combined to form vertical stacks and lateral heterostuctures with covalent line interfaces. While thicker vertical stacks have been realized, lateral heterostructures from multilayer van der Waals crystals, which could bring the benefits of high-quality interfaces to bulk-like layered materials, have remained much less explored. In this work, we demonstrate the integration of anisotropic layered Sn and Ge monosulfides into complex heterostructures with seamless lateral interfaces and tunable vertical design using a two-step growth process. The anisotropic lattice mismatch at the lateral interfaces between GeS and SnS is relaxed via dislocations and interfacial alloying. Nanoscale optoelectronic measurements by cathodoluminescence spectroscopy show the characteristic light emission of joined high-quality van der Waals crystals. Spectroscopy across the lateral interface indicates valley-selective luminescence in the bulk SnS component that arises due to anisotropic electron transfer across the interface. The results demonstrate the ability to realize high-quality lateral heterostructures of multilayer van der Waals crystals for diverse applications, e.g., in optoelectronics or valleytronics.

Authors:

^[1];

^[1]

Univ. of Nebraska, Lincoln, NE (United States)

Publication Date:: Fri Sep 04 00:00:00 EDT 2020

Research Org.:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1657837

Grant/Contract Number:: SC0016343

Resource Type:: Accepted Manuscript

Journal Name:: ACS Nano

Additional Journal Information:: Journal Volume: 14; Journal Issue: 9; Journal ID: ISSN 1936-0851

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; lateral heterostructures; van der Waals stacks; layered semiconductors; optoelectronics; valleytronics

Citation Formats


                    Sutter, Eli, Wang, Jia, and Sutter, Peter. Lateral Heterostructures of Multilayer GeS and SnS van der Waals Crystals.  United States: N. p., 2020. 
Web.  doi:10.1021/acsnano.0c05978.

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                    Sutter, Eli, Wang, Jia, & Sutter, Peter. Lateral Heterostructures of Multilayer GeS and SnS van der Waals Crystals.  United States.  https://doi.org/10.1021/acsnano.0c05978

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                    Sutter, Eli, Wang, Jia, and Sutter, Peter. Fri .  
"Lateral Heterostructures of Multilayer GeS and SnS van der Waals Crystals".  United States.  https://doi.org/10.1021/acsnano.0c05978.  https://www.osti.gov/servlets/purl/1657837.

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@article{osti_1657837,

  title        = {Lateral Heterostructures of Multilayer GeS and SnS van der Waals Crystals},

  author       = {Sutter, Eli and Wang, Jia and Sutter, Peter},

  abstractNote = {Engineered heterostructures derive distinct properties from materials integration and interface formation. Two-dimensional crystals have been combined to form vertical stacks and lateral heterostuctures with covalent line interfaces. While thicker vertical stacks have been realized, lateral heterostructures from multilayer van der Waals crystals, which could bring the benefits of high-quality interfaces to bulk-like layered materials, have remained much less explored. In this work, we demonstrate the integration of anisotropic layered Sn and Ge monosulfides into complex heterostructures with seamless lateral interfaces and tunable vertical design using a two-step growth process. The anisotropic lattice mismatch at the lateral interfaces between GeS and SnS is relaxed via dislocations and interfacial alloying. Nanoscale optoelectronic measurements by cathodoluminescence spectroscopy show the characteristic light emission of joined high-quality van der Waals crystals. Spectroscopy across the lateral interface indicates valley-selective luminescence in the bulk SnS component that arises due to anisotropic electron transfer across the interface. The results demonstrate the ability to realize high-quality lateral heterostructures of multilayer van der Waals crystals for diverse applications, e.g., in optoelectronics or valleytronics.},

  doi          = {10.1021/acsnano.0c05978},

  journal      = {ACS Nano},

  number       = 9,

  volume       = 14,

  place        = {United States},

  year         = {Fri Sep 04 00:00:00 EDT 2020},

  month        = {Fri Sep 04 00:00:00 EDT 2020}

}

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Title: Lateral Heterostructures of Multilayer GeS and SnS van der Waals Crystals

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Bilayer Lateral Heterostructures of Transition-Metal Dichalcogenides and Their Optoelectronic Response
journal, September 2019

Epitaxy of Layered Orthorhombic SnS-SnS _x Se ₍₁₋ _x ₎ Core-Shell Heterostructures with Anisotropic Photoresponse
journal, April 2016

Wrap‐Around Core–Shell Heterostructures of Layered Crystals
journal, May 2019

MoS2 Heterojunctions by Thickness Modulation
journal, June 2015

Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides
journal, September 2018

Optical absorption band edge in single-crystal GeS
journal, August 1975

Anisotropy of the intrinsic photoconductivity of GeS
journal, November 1979

Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
journal, April 2018

Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS
journal, October 2015

Intrinsic Ferroelasticity and/or Multiferroicity in Two-Dimensional Phosphorene and Phosphorene Analogues
journal, April 2016

Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides
journal, August 2016

Quasiparticle band structures and interface physics of SnS and GeS
journal, June 2013

Nanoparticle-Templated Thickness Controlled Growth, Thermal Stability, and Decomposition of Ultrathin Tin Sulfide Plates
journal, March 2019

Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations
journal, December 2019

Refinement of the structures of GeS, GeSe, SnS and SnSe
journal, January 1978

Commentary: The Materials Project: A materials genome approach to accelerating materials innovation
journal, July 2013

Chiral twisted van der Waals nanowires
journal, April 2019

Pressure dependence of the Raman spectra of the IV-VI layer compounds GeS and GeSe
journal, September 1977

Anisotropic optical and electronic properties of two-dimensional layered germanium sulfide
journal, December 2016

Ab initio calculation of vibrational spectra of orthorhombic IV–VI layered crystals
journal, September 2013

Few-Layer to Multilayer Germanium(II) Sulfide: Synthesis, Structure, Stability, and Optoelectronics
journal, July 2019

Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment
journal, June 1996

1D Wires of 2D Layered Materials: Germanium Sulfide Nanowires as Efficient Light Emitters
journal, December 2017

Growth Mechanisms of Anisotropic Layered Group IV Chalcogenides on van der Waals Substrates for Energy Conversion Applications
journal, May 2018

Lattice Relaxation at the Interface of Two-Dimensional Crystals: Graphene and Hexagonal Boron-Nitride
journal, August 2014

Lateral heterojunctions within monolayer MoSe₂–WSe₂ semiconductors
journal, August 2014

Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy
journal, February 2017

Germanium Sulfide Nano-Optics Probed by STEM-Cathodoluminescence Spectroscopy
journal, June 2018

Evaluation of Transport Parameters in MoS ₂ /Graphene Junction Devices Fabricated by Chemical Vapor Deposition
journal, January 2018

Large excitonic effects in group-IV sulfide monolayers
journal, December 2015

Valley physics in tin (II) sulfide
journal, January 2016

Visualization and quantification of transition metal atomic mixing in Mo_1−xW_xS₂ single layers
journal, January 2013