Needle-Like Ferroelastic Domains in Individual Ferroelectric Nanoparticles
[5]
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Paul Scherrer Inst. (PSI), Villigen (Switzerland). Swiss Light Source
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Rensselaer Polytechnic Inst., Troy, NY (United States)
Superior structural, physical and electronic properties make ferroelectric nanocrystals essential in enabling a range of next-generation devices. Ferroelectric responses are determined by crystal structure and domain morphology. The ability to reversibly displace, create and annihilate elastic domains is critical to device applications. Whereas electric-field control has been demonstrated for ferroelectric 180° surface domain walls and vortices, similar control of ferroelastic domains and domain boundaries within individual nanocrystals remains challenging. Using controlled external compressive and tensile axial stress, deterministic and reversible control of highly mobile ferroelastic domains and axial polarization in three dimensions is demonstrated in this study. While many studies exist on ferroelastic domains in thin films and bulk, little is known about ferroelastic interactions at the single nanoparticle level, especially involving domain boundaries. Through combining Bragg coherent X-ray diffractive imaging and Landau theory, strain gradients in individual BaTiO3 nanocrystals are shown to stabilize needle-like ferroelastic twin domains. These domains are highly labile under applied axial stress, producing a locally enhanced electric polarization mediated by a ferroelectric phase transition. The efficacy of Bragg coherent X-ray diffractive imaging in studying in operando domains in three-dimensions is demonstrated, while synergy with theory provides a paradigm for domain boundary engineering and potential for nanoscale functional devices.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program; Air Force Office of Scientific Research (AFOSR)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1657227
- Alternate ID(s):
- OSTI ID: 1603708
- Journal Information:
- Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 5 Vol. 6; ISSN 2199-160X
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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