The Scattering of Phonons by Infinitely Long Quantum Dislocations Segments and the Generation of Thermal Transport Anisotropy in a Solid Threaded by Many Parallel Dislocations

Journal Article · 29 August 2020 · Nanomaterials

DOI: https://doi.org/10.3390/nano10091711 · OSTI ID:1656667

Lund, Fernando  ^[1]; Scheihing-Hitschfeld, Bruno  ^[2]

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1. Universidad de Chile, Santiago (Chile). Facultad de Ciencias Físicas y Matemáticas. Departamento de Física; Universidad de Chile, Santiago (Chile). Facultad de Ciencias Físicas y Matemáticas. CIMAT
2. Universidad de Chile, Santiago (Chile). Facultad de Ciencias Físicas y Matemáticas. Departamento de Física; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Center for Theoretical Physics

A canonical quantization procedure is applied to the interaction of elastic waves—phonons—with infinitely long dislocations that can oscillate about an equilibrium, straight line, configuration. The interaction is implemented through the well-known Peach–Koehler force. For small dislocation excursions away from the equilibrium position, the quantum theory can be solved to all orders in the coupling constant. We study in detail the quantum excitations of the dislocation line and its interactions with phonons. The consequences for the drag on a dislocation caused by the phonon wind are pointed out. We compute the cross-section for phonons incident on the dislocation lines for an arbitrary angle of incidence. The consequences for thermal transport are explored, and we compare our results, involving a dynamic dislocation, with those of Klemens and Carruthers, involving a static dislocation. In our case, the relaxation time is inversely proportional to frequency, rather than directly proportional to frequency. As a consequence, the thermal transport anisotropy generated on a material by the presence of a highly-oriented array of dislocations is considerably more sensitive to the frequency of each propagating mode, and, therefore, to the temperature of the material.

• Research Organization: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
• Sponsoring Organization: USDOE Office of Science (SC); USDOE Office of Nuclear Energy (NE)
• Grant/Contract Number: SC0011090
• OSTI ID: 1656667
• Alternate ID(s): OSTI ID: 1802204
• Journal Information: Nanomaterials, Vol. 10, Issue 9; ISSN 2079-4991
• Publisher: MDPICopyright Statement
• Country of Publication: United States
• Language: English