Formation and control of the $E_\mathrm{2}^\mathrm{*}$ center in implanted β-Ga$_\mathrm{2}$O$_\mathrm{3}$ by reverse-bias and zero-bias annealing

Zimmermann, C.; Førdestrøm Verhoeven, E.; Kalmann Frodason, Y.; Weiser, P. M.; Varley, J. B.; Vines, L.

doi:10.1088/1361-6463/aba64d

Title: Formation and control of the $$E_\mathrm{2}^\mathrm{*}$$ center in implanted β-Ga$$_\mathrm{2}$$O$$_\mathrm{3}$$ by reverse-bias and zero-bias annealing

Journal Article · 26 August 2020 · Journal of Physics. D, Applied Physics

DOI: https://doi.org/10.1088/1361-6463/aba64d · OSTI ID:1651156

; Førdestrøm Verhoeven, E.; Kalmann Frodason, Y.; Weiser, P. M.; Varley, J. B.;

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Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Advanced Manufacturing Office; Research Council of Norway

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1651156

Alternate ID(s):: OSTI ID: 1651157; OSTI ID: 1668491; OSTI ID: 23015179

Journal Information:: Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Journal Issue: 46 Vol. 53; ISSN 0022-3727

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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