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Title: Seed-Initiated Synthesis and Tunable Doping Graphene for High-Performance Photodetectors

Abstract

Due to the promising utilizations in nanoelectronics, doping-tunable graphene is paid extensive attentions. Nevertheless, a harmless approach to dope/co-dope graphene in a controllable and easy way with low cost is still unattainable. In this work, through seeding of 0D N & S dual-doped graphene quantum dots (N & S dual-doped GQDs) on a catalytic substrate and then dynamic chemical vapor deposition (CVD), a monolayered dual-doped graphene film is demonstrated. The concentrations of dopants in graphene are strictly discerned in accordance with preliminary seeding for dual-doped GQDs. Furthermore, through the monitoring of growing process, the research elucidates the growth mechanism of the graphene, and unveils that dual-doped GQDs can serve as the nucleation centers for creating doped-graphene films by 2D epitaxial growth and thus graphene with designed dopant concentration can be obtained. Finally, the photodetector built on N & S dual-doped graphene film is found to perform satisfactorily, accompanying high detectivity (≈1.42 × 1010 cm Hz1/2 W-1) and responsivity (61 mA W-1), at wavelength of 1550 nm. The research proposes a dexterous approach for synthesizing tunably doped graphene films by the combination of locally controlled nucleation seeds and in situ CVD, which lays the foundation for applying graphene in industries ofmore » photonic and electronic devices.« less

Authors:
 [1];  [2]; ORCiD logo [1];  [2];  [3];  [4];  [2];  [5]; ORCiD logo [6];  [2];  [1];  [1];  [1];  [7]
  1. Ningbo Univ. (China)
  2. Chinese Academy of Sciences (CAS), Shanghai (China). Shanghai Inst. of Microsystem and Information Technology, State Key Lab. of Functional Materials for Informatics
  3. Shandong Univ., Jinan (China). Center of Nanoelectronics and School of Microelectronics
  4. Chinese Academy of Sciences (CAS), Beijing (China). State Key Lab. of Integrated Optoelectronics, Inst. of Semiconductors
  5. Peking Univ., Beijing (China). International Center for Quantum Materials
  6. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  7. Ningbo Univ. (China); Chinese Academy of Sciences (CAS), Shanghai (China). Shanghai Inst. of Microsystem and Information Technology, State Key Lab. of Functional Materials for Informatics
Publication Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC). Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); Shanghai Science and Technology Committee; Natural Science Foundation of Ningbo; USDOE
OSTI Identifier:
1650619
Alternate Identifier(s):
OSTI ID: 1571546
Report Number(s):
LA-UR-19-26175
Journal ID: ISSN 2195-1071
Grant/Contract Number:  
89233218CNA000001; 11704204, 61604084; 11804353; 51802337; 11774368; 18511110600; 2017A610104
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Optical Materials
Additional Journal Information:
Journal Volume: 7; Journal Issue: 24; Journal ID: ISSN 2195-1071
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; doping‐tunable graphene; growth mechanism; photodetectors; seed‐initiated synthesis

Citation Formats

Li, Jiurong, Yang, Siwei, Wang, Gang, Huang, Tao, Guo, Qinglei, Liu, Zhiduo, He, Peng, Zheng, Xiaohu, Wang, Yongqiang, Xu, Anli, Zhao, Menghan, Zhu, Wei, Chen, Da, and Ding, Guqiao. Seed-Initiated Synthesis and Tunable Doping Graphene for High-Performance Photodetectors. United States: N. p., 2019. Web. doi:10.1002/adom.201901388.
Li, Jiurong, Yang, Siwei, Wang, Gang, Huang, Tao, Guo, Qinglei, Liu, Zhiduo, He, Peng, Zheng, Xiaohu, Wang, Yongqiang, Xu, Anli, Zhao, Menghan, Zhu, Wei, Chen, Da, & Ding, Guqiao. Seed-Initiated Synthesis and Tunable Doping Graphene for High-Performance Photodetectors. United States. https://doi.org/10.1002/adom.201901388
Li, Jiurong, Yang, Siwei, Wang, Gang, Huang, Tao, Guo, Qinglei, Liu, Zhiduo, He, Peng, Zheng, Xiaohu, Wang, Yongqiang, Xu, Anli, Zhao, Menghan, Zhu, Wei, Chen, Da, and Ding, Guqiao. Wed . "Seed-Initiated Synthesis and Tunable Doping Graphene for High-Performance Photodetectors". United States. https://doi.org/10.1002/adom.201901388. https://www.osti.gov/servlets/purl/1650619.
@article{osti_1650619,
title = {Seed-Initiated Synthesis and Tunable Doping Graphene for High-Performance Photodetectors},
author = {Li, Jiurong and Yang, Siwei and Wang, Gang and Huang, Tao and Guo, Qinglei and Liu, Zhiduo and He, Peng and Zheng, Xiaohu and Wang, Yongqiang and Xu, Anli and Zhao, Menghan and Zhu, Wei and Chen, Da and Ding, Guqiao},
abstractNote = {Due to the promising utilizations in nanoelectronics, doping-tunable graphene is paid extensive attentions. Nevertheless, a harmless approach to dope/co-dope graphene in a controllable and easy way with low cost is still unattainable. In this work, through seeding of 0D N & S dual-doped graphene quantum dots (N & S dual-doped GQDs) on a catalytic substrate and then dynamic chemical vapor deposition (CVD), a monolayered dual-doped graphene film is demonstrated. The concentrations of dopants in graphene are strictly discerned in accordance with preliminary seeding for dual-doped GQDs. Furthermore, through the monitoring of growing process, the research elucidates the growth mechanism of the graphene, and unveils that dual-doped GQDs can serve as the nucleation centers for creating doped-graphene films by 2D epitaxial growth and thus graphene with designed dopant concentration can be obtained. Finally, the photodetector built on N & S dual-doped graphene film is found to perform satisfactorily, accompanying high detectivity (≈1.42 × 1010 cm Hz1/2 W-1) and responsivity (61 mA W-1), at wavelength of 1550 nm. The research proposes a dexterous approach for synthesizing tunably doped graphene films by the combination of locally controlled nucleation seeds and in situ CVD, which lays the foundation for applying graphene in industries of photonic and electronic devices.},
doi = {10.1002/adom.201901388},
journal = {Advanced Optical Materials},
number = 24,
volume = 7,
place = {United States},
year = {2019},
month = {10}
}

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Cited by: 9 works
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Figures / Tables:

Figure 1 Figure 1: Characterization of the N & S dual-doped graphene films. a) Sketch maps for synthesis of doping-tunable graphene films by a seeding with zero-dimensional N & S dual-doped GQDs on the catalytic substrate, followed by dynamic CVD. The arrows represent carbon atoms from CH4 decomposition. b) Plane view TEMmore » image of N & S dual-doped GQDs. An inset corresponds to size distribution of N & S dual-doped GQDs. c) HR-TEM pattern of representative N & S dual-doped GQDs with the white line indicating where the line profile was taken. d) Analysis image of FFT for N & S dual-doped GQDs. e) AFM image of N & S dual-doped GQDs spin-coated on Cu foil in the contact mode. f) Thicknesses of N & S dual-doped GQDs. g) Typical Raman spectra of the N & S dual-doped GQDs (green line) and graphene films (pink line) in comparison with pure graphene (dashed gray line) that has been transferred to a SiO2/Si substrate. h) TEM image (plane view) for continuity of N & S dual-doped graphene films. The inset shows the corresponding SAED pattern and profiles of diffraction spot intensities. Graphene is found to be monolayered in HR-TEM image (right) (scale bar therein is 1 nm). i) EELS diagrams of graphene films doped with dual atoms N and S. j-l) EELS elemental diagrams of C, S, and N in graphene films doped with dual atoms N and S, respectively. m) Deconvoluted XPS C-1s spectrum of graphene films doped with dual atoms N and S of high resolutions.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.