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Title: Irradiation induced creep in nanocrystalline high entropy alloys

Abstract

Irradiation induced creep (IIC) compliance in NiCoFeCrMn high entropy alloys is measured as a function of grain size (30 < x < 80 nm) and temperature (23° C- 500° C). For 2.6 MeV Ag3+ irradiation at a dose rate of 1.5x10-3 dpa-1s-1 the transition from the recombination to sink limited regimes occurs at ~ 100 °C. In the sink-limited regime, the IIC compliance scales inversely with grain size, consistent with a recently proposed model for grain boundary IIC [1]. Thermal creep rate is also measured; it does not become comparable to the IIC rate, however, until ~ 650 oC. The results are discussed in context of defect kinetics in irradiated HEA systems.

Authors:
 [1];  [2];  [2];  [2];  [1];  [1]
  1. Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Materials Science and Engineering
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Illinois at Urbana-Champaign, IL (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Contributing Org.:
Sandia National Laboratories
OSTI Identifier:
1650165
Alternate Identifier(s):
OSTI ID: 1607542; OSTI ID: 1774580
Report Number(s):
SAND-2020-8400J
Journal ID: ISSN 1359-6454; 689923
Grant/Contract Number:  
AC04-94AL85000; NA0003525; SC0019875; FG02-05ER46217; FWP-15013170; NA-0003525; DE-SC0019875
Resource Type:
Accepted Manuscript
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Volume: 182; Journal ID: ISSN 1359-6454
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; high entropy alloy (HEA); irradiation induced creep; vacancy migration enthalpy; in situ transmission electron microscopy

Citation Formats

Jawaharram, Gowtham Sriram, Barr, ChristopherM., Monterrosa, AnthonyM., Hattar, Khalid Mikhiel, Averback, Robert S., and Dillon, Shen J.. Irradiation induced creep in nanocrystalline high entropy alloys. United States: N. p., 2019. Web. https://doi.org/10.1016/j.actamat.2019.10.022.
Jawaharram, Gowtham Sriram, Barr, ChristopherM., Monterrosa, AnthonyM., Hattar, Khalid Mikhiel, Averback, Robert S., & Dillon, Shen J.. Irradiation induced creep in nanocrystalline high entropy alloys. United States. https://doi.org/10.1016/j.actamat.2019.10.022
Jawaharram, Gowtham Sriram, Barr, ChristopherM., Monterrosa, AnthonyM., Hattar, Khalid Mikhiel, Averback, Robert S., and Dillon, Shen J.. Sat . "Irradiation induced creep in nanocrystalline high entropy alloys". United States. https://doi.org/10.1016/j.actamat.2019.10.022. https://www.osti.gov/servlets/purl/1650165.
@article{osti_1650165,
title = {Irradiation induced creep in nanocrystalline high entropy alloys},
author = {Jawaharram, Gowtham Sriram and Barr, ChristopherM. and Monterrosa, AnthonyM. and Hattar, Khalid Mikhiel and Averback, Robert S. and Dillon, Shen J.},
abstractNote = {Irradiation induced creep (IIC) compliance in NiCoFeCrMn high entropy alloys is measured as a function of grain size (30 < x < 80 nm) and temperature (23° C- 500° C). For 2.6 MeV Ag3+ irradiation at a dose rate of 1.5x10-3 dpa-1s-1 the transition from the recombination to sink limited regimes occurs at ~ 100 °C. In the sink-limited regime, the IIC compliance scales inversely with grain size, consistent with a recently proposed model for grain boundary IIC [1]. Thermal creep rate is also measured; it does not become comparable to the IIC rate, however, until ~ 650 oC. The results are discussed in context of defect kinetics in irradiated HEA systems.},
doi = {10.1016/j.actamat.2019.10.022},
journal = {Acta Materialia},
number = ,
volume = 182,
place = {United States},
year = {2019},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

Fig 1 Fig 1: (a) Au lines and pads fabricated on oxidized Si wafer using the thin film lift-off process and (b) Au wire bonds are used to connect the Au pads to the Vespel® mechanical test stage and the focused ion beam was used to fabricate the HEA 3-point bend creepmore » sample which was connected to the Au lines using e-beam assisted Pt deposition.« less

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