Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology

Mitchell, B.; Timmerman, D.; Zhu, W.; Lin, J. Y.; Jiang, H. X.; Poplawsky, Jonathan D.; Ishii, R.; Kawakami, Yuya; Dierolf, Volkmar; Tatebayashi, J.; Ichikawa, S.; Fujiwara, Yasufumi

doi:10.1063/1.5134050

Title: Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology

Journal Article · 02 January 2020 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.5134050 · OSTI ID:1648951

^[1];

^[2]; Zhu, W. ^[2];

^[3];

^[4];

^[5]; Kawakami, Yuya ^[5];

^[6];

^[2];

^[2]; Fujiwara, Yasufumi ^[2]

West Chester Univ., West Chester, PA (United States). Dept. of Physics; Osaka Univ. (Japan). Division of Materials and Manufacturing Science, Graduate School of Engineering
Osaka Univ. (Japan). Division of Materials and Manufacturing Science, Graduate School of Engineering
Texas Tech Univ., Lubbock, TX (United States). Dept. of Electrical and Computer Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanomaterials Science
Kyoto Univ. (Japan). Dept. of Electronic Science and Engineering
Lehigh Univ., Bethlehem, PA (United States). Dept. of Physics

In this study, the dopant distribution and surface and structural properties of Er- and Eu-doped GaN samples were investigated using atom probe tomography (APT) and atomic force microscopy (AFM). Erbium accumulation within host GaN threading dislocations was directly detected by APT allowing for the dislocations to be imaged in three dimensions. In addition, photoluminescence spectroscopy with high lateral resolution, by means of scanning near-field optical microscopy, was performed on Eu-doped GaN samples. By combining these results with AFM mappings of the same area, it was concluded that Eu³⁺ ions also accumulate at threading dislocations. Moreover, high-resolution surface profiles of both samples show that even dilute doping (<0.2%) of Eu and Er has a significant influence on the growth morphology of the GaN host material and the nature of the threading dislocations within it. Transmission electron microscopy techniques were used to show the influence of rare-earth incorporation on the growth of GaN lattice and the propagation of threading dislocations.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: Japan Society for the Promotion of Science (JSPS); US Army CERDEC; US Army Research Office (ARO); USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1648951

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 127; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology

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