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Title: Demonstration of a ring-FEL as an EUV lithography tool

Abstract

In this work, we present the required structure and function of a ring-FEL as a radiation source for extreme ultraviolet radiation lithography (EUVL). A 100 m-long straight section that conducts an extremely low emittance beam from a fourth-generation storage ring can increase the average power at 13.5 nm wavelength to up to 1 kW without degrading the beam in the rest of the ring. Here, simulation results for a ring-FEL as a EUVL source are described.

Authors:
 [1];  [2];  [3];  [1];  [1]; ORCiD logo [1];  [1];  [1];  [1];  [1]
  1. Pohang Accelerator Lab. (PAL), POSTECH (South Korea)
  2. Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Research Foundation of Korea (NRF)
OSTI Identifier:
1646887
Grant/Contract Number:  
AC02-76SF00515; NRF-2019R1C1C1003412; NRF-2019R1A2C1004862
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Synchrotron Radiation (Online)
Additional Journal Information:
Journal Name: Journal of Synchrotron Radiation (Online); Journal Volume: 27; Journal Issue: 4; Journal ID: ISSN 1600-5775
Publisher:
International Union of Crystallography
Country of Publication:
United States
Language:
English
Subject:
07 ISOTOPE AND RADIATION SOURCES; Fourth-generation storage ring; EUV; free-electron laser

Citation Formats

Lee, Jaeyu, Jang, G., Kim, J., Oh, B., Kim, D. -E., Lee, S., Kim, J. -H., Ko, J., Min, C., and Shin, S.. Demonstration of a ring-FEL as an EUV lithography tool. United States: N. p., 2020. Web. https://doi.org/10.1107/s1600577520005676.
Lee, Jaeyu, Jang, G., Kim, J., Oh, B., Kim, D. -E., Lee, S., Kim, J. -H., Ko, J., Min, C., & Shin, S.. Demonstration of a ring-FEL as an EUV lithography tool. United States. https://doi.org/10.1107/s1600577520005676
Lee, Jaeyu, Jang, G., Kim, J., Oh, B., Kim, D. -E., Lee, S., Kim, J. -H., Ko, J., Min, C., and Shin, S.. Wed . "Demonstration of a ring-FEL as an EUV lithography tool". United States. https://doi.org/10.1107/s1600577520005676. https://www.osti.gov/servlets/purl/1646887.
@article{osti_1646887,
title = {Demonstration of a ring-FEL as an EUV lithography tool},
author = {Lee, Jaeyu and Jang, G. and Kim, J. and Oh, B. and Kim, D. -E. and Lee, S. and Kim, J. -H. and Ko, J. and Min, C. and Shin, S.},
abstractNote = {In this work, we present the required structure and function of a ring-FEL as a radiation source for extreme ultraviolet radiation lithography (EUVL). A 100 m-long straight section that conducts an extremely low emittance beam from a fourth-generation storage ring can increase the average power at 13.5 nm wavelength to up to 1 kW without degrading the beam in the rest of the ring. Here, simulation results for a ring-FEL as a EUVL source are described.},
doi = {10.1107/s1600577520005676},
journal = {Journal of Synchrotron Radiation (Online)},
number = 4,
volume = 27,
place = {United States},
year = {2020},
month = {5}
}

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Works referenced in this record:

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