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Title: Effects of O 2 addition on in-plasma photo-assisted etching of Si with chlorine

Authors:
 [1];  [1];  [1];  [1]
  1. Plasma Processing Laboratory, Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1644150
Grant/Contract Number:  
DE -SC0001939
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology A
Additional Journal Information:
Journal Name: Journal of Vacuum Science and Technology A Journal Volume: 38 Journal Issue: 5; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Country of Publication:
United States
Language:
English

Citation Formats

Du, Linfeng, Hirsch, Emilia W., Economou, Demetre J., and Donnelly, Vincent M. Effects of O 2 addition on in-plasma photo-assisted etching of Si with chlorine. United States: N. p., 2020. Web. https://doi.org/10.1116/6.0000338.
Du, Linfeng, Hirsch, Emilia W., Economou, Demetre J., & Donnelly, Vincent M. Effects of O 2 addition on in-plasma photo-assisted etching of Si with chlorine. United States. https://doi.org/10.1116/6.0000338
Du, Linfeng, Hirsch, Emilia W., Economou, Demetre J., and Donnelly, Vincent M. Tue . "Effects of O 2 addition on in-plasma photo-assisted etching of Si with chlorine". United States. https://doi.org/10.1116/6.0000338.
@article{osti_1644150,
title = {Effects of O 2 addition on in-plasma photo-assisted etching of Si with chlorine},
author = {Du, Linfeng and Hirsch, Emilia W. and Economou, Demetre J. and Donnelly, Vincent M.},
abstractNote = {},
doi = {10.1116/6.0000338},
journal = {Journal of Vacuum Science and Technology A},
number = 5,
volume = 38,
place = {United States},
year = {2020},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1116/6.0000338

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