Electron quantum interference in epitaxial antiferromagnetic NiO thin films

Xu, Jia; Lou, Feng; Jia, Mengwen; Chen, Gong; Zhou, Chao; Li, Qian; Liu, Kai; Schmid, Andreas K.; Xiang, Hongjun; Wu, Yizheng

doi:10.1063/1.5129772

Title: Electron quantum interference in epitaxial antiferromagnetic NiO thin films

Journal Article · 02 April 2020 · AIP Advances

DOI: https://doi.org/10.1063/1.5129772 · OSTI ID:1642683

Xu, Jia ^[1]; Lou, Feng ^[2];

^[1]; Chen, Gong ^[3]; Zhou, Chao ^[1]; Li, Qian ^[4];

^[5]; Schmid, Andreas K. ^[6]; Xiang, Hongjun ^[2];

^[2]

Fudan Univ., Shanghai (China)
Fudan Univ., Shanghai (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China)
Univ. of California, Davis, CA (United States)
Univ. of California, Berkeley, CA (United States)
Univ. of California, Davis, CA (United States); Georgetown Univ., Washington DC (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

The electron reflectivity from NiO thin films grown on Ag(001) has been systematically studied as a function of film thickness and electron energy. A strong electron quantum interference effect was observed from the NiO film, which is used to derive the unoccupied band dispersion above the Fermi surface along the Γ-X direction using the phase accumulation model. The experimental bands agree well with first-principles calculations. A weaker electron quantum interference effect was also observed from the CoO film.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: National Key Basic Research Program of China; National Key Research and Development Program of China; National Natural Science Foundation of China (NNSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1642683

Journal Information:: AIP Advances, Journal Name: AIP Advances Journal Issue: 4 Vol. 10; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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