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Title: Electron quantum interference in epitaxial antiferromagnetic NiO thin films

Abstract

The electron reflectivity from NiO thin films grown on Ag(001) has been systematically studied as a function of film thickness and electron energy. A strong electron quantum interference effect was observed from the NiO film, which is used to derive the unoccupied band dispersion above the Fermi surface along the Γ-X direction using the phase accumulation model. The experimental bands agree well with first-principles calculations. A weaker electron quantum interference effect was also observed from the CoO film.

Authors:
 [1];  [2]; ORCiD logo [1];  [3];  [1];  [4]; ORCiD logo [5];  [6];  [2]; ORCiD logo [2]
  1. Fudan Univ., Shanghai (China)
  2. Fudan Univ., Shanghai (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China)
  3. Univ. of California, Davis, CA (United States)
  4. Univ. of California, Berkeley, CA (United States)
  5. Univ. of California, Davis, CA (United States); Georgetown Univ., Washington DC (United States)
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Key Basic Research Program of China; National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC)
OSTI Identifier:
1642683
Alternate Identifier(s):
OSTI ID: 1608348
Grant/Contract Number:  
AC02-05CH11231; 2015CB921401; 2016YFA0300703; 11974079; 11734006; 11825403
Resource Type:
Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 10; Journal Issue: 4; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Xu, Jia, Lou, Feng, Jia, Mengwen, Chen, Gong, Zhou, Chao, Li, Qian, Liu, Kai, Schmid, Andreas K., Xiang, Hongjun, and Wu, Yizheng. Electron quantum interference in epitaxial antiferromagnetic NiO thin films. United States: N. p., 2020. Web. doi:10.1063/1.5129772.
Xu, Jia, Lou, Feng, Jia, Mengwen, Chen, Gong, Zhou, Chao, Li, Qian, Liu, Kai, Schmid, Andreas K., Xiang, Hongjun, & Wu, Yizheng. Electron quantum interference in epitaxial antiferromagnetic NiO thin films. United States. https://doi.org/10.1063/1.5129772
Xu, Jia, Lou, Feng, Jia, Mengwen, Chen, Gong, Zhou, Chao, Li, Qian, Liu, Kai, Schmid, Andreas K., Xiang, Hongjun, and Wu, Yizheng. Fri . "Electron quantum interference in epitaxial antiferromagnetic NiO thin films". United States. https://doi.org/10.1063/1.5129772. https://www.osti.gov/servlets/purl/1642683.
@article{osti_1642683,
title = {Electron quantum interference in epitaxial antiferromagnetic NiO thin films},
author = {Xu, Jia and Lou, Feng and Jia, Mengwen and Chen, Gong and Zhou, Chao and Li, Qian and Liu, Kai and Schmid, Andreas K. and Xiang, Hongjun and Wu, Yizheng},
abstractNote = {The electron reflectivity from NiO thin films grown on Ag(001) has been systematically studied as a function of film thickness and electron energy. A strong electron quantum interference effect was observed from the NiO film, which is used to derive the unoccupied band dispersion above the Fermi surface along the Γ-X direction using the phase accumulation model. The experimental bands agree well with first-principles calculations. A weaker electron quantum interference effect was also observed from the CoO film.},
doi = {10.1063/1.5129772},
journal = {AIP Advances},
number = 4,
volume = 10,
place = {United States},
year = {2020},
month = {4}
}

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