Electron quantum interference in epitaxial antiferromagnetic NiO thin films
- Fudan Univ., Shanghai (China)
- Fudan Univ., Shanghai (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China)
- Univ. of California, Davis, CA (United States)
- Univ. of California, Berkeley, CA (United States)
- Univ. of California, Davis, CA (United States); Georgetown Univ., Washington DC (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
The electron reflectivity from NiO thin films grown on Ag(001) has been systematically studied as a function of film thickness and electron energy. A strong electron quantum interference effect was observed from the NiO film, which is used to derive the unoccupied band dispersion above the Fermi surface along the Γ-X direction using the phase accumulation model. The experimental bands agree well with first-principles calculations. A weaker electron quantum interference effect was also observed from the CoO film.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Key Basic Research Program of China; National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC)
- Grant/Contract Number:
- AC02-05CH11231; 2015CB921401; 2016YFA0300703; 11974079; 11734006; 11825403
- OSTI ID:
- 1642683
- Alternate ID(s):
- OSTI ID: 1608348
- Journal Information:
- AIP Advances, Vol. 10, Issue 4; ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 1 work
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