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Title: Evaporated tellurium thin films for p-type field-effect transistors and circuits

Abstract

There is an emerging need for semiconductors that can be processed at near ambient temperature with high mobility and device performance. Although multiple n-type options have been identified, the development of their p-type counterparts remains limited. In this paper, we report the realization of tellurium thin films through thermal evaporation at cryogenic temperatures for fabrication of high-performance wafer-scale p-type field-effect transistors. We achieve an effective hole mobility of ~35 cm2 V–1 s–1, on/off current ratio of ~104 and subthreshold swing of 108 mV dec–1 on an 8-nm-thick film. High-performance tellurium p-type field-effect transistors are fabricated on a wide range of substrates including glass and plastic, further demonstrating the broad applicability of this material. Significantly, three-dimensional circuits are demonstrated by integrating multi-layered transistors on a single chip using sequential lithography, deposition and lift-off processes. Finally, various functional logic gates and circuits are demonstrated.

Authors:
 [1];  [2]; ORCiD logo [2];  [3];  [2];  [2];  [1];  [2];  [2];  [3]; ORCiD logo [2]
  1. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences and Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  2. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  3. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; ; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
OSTI Identifier:
1639001
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Nature Nanotechnology
Additional Journal Information:
Journal Volume: 15; Journal Issue: 1; Journal ID: ISSN 1748-3387
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; electrical and electronic engineering; electronic devices; materials for devices

Citation Formats

Zhao, Chunsong, Tan, Chaoliang, Lien, Der-Hsien, Song, Xiaohui, Amani, Matin, Hettick, Mark, Nyein, Hnin Yin Yin, Yuan, Zhen, Li, Lu, Scott, Mary C., and Javey, Ali. Evaporated tellurium thin films for p-type field-effect transistors and circuits. United States: N. p., 2019. Web. https://doi.org/10.1038/s41565-019-0585-9.
Zhao, Chunsong, Tan, Chaoliang, Lien, Der-Hsien, Song, Xiaohui, Amani, Matin, Hettick, Mark, Nyein, Hnin Yin Yin, Yuan, Zhen, Li, Lu, Scott, Mary C., & Javey, Ali. Evaporated tellurium thin films for p-type field-effect transistors and circuits. United States. https://doi.org/10.1038/s41565-019-0585-9
Zhao, Chunsong, Tan, Chaoliang, Lien, Der-Hsien, Song, Xiaohui, Amani, Matin, Hettick, Mark, Nyein, Hnin Yin Yin, Yuan, Zhen, Li, Lu, Scott, Mary C., and Javey, Ali. Mon . "Evaporated tellurium thin films for p-type field-effect transistors and circuits". United States. https://doi.org/10.1038/s41565-019-0585-9. https://www.osti.gov/servlets/purl/1639001.
@article{osti_1639001,
title = {Evaporated tellurium thin films for p-type field-effect transistors and circuits},
author = {Zhao, Chunsong and Tan, Chaoliang and Lien, Der-Hsien and Song, Xiaohui and Amani, Matin and Hettick, Mark and Nyein, Hnin Yin Yin and Yuan, Zhen and Li, Lu and Scott, Mary C. and Javey, Ali},
abstractNote = {There is an emerging need for semiconductors that can be processed at near ambient temperature with high mobility and device performance. Although multiple n-type options have been identified, the development of their p-type counterparts remains limited. In this paper, we report the realization of tellurium thin films through thermal evaporation at cryogenic temperatures for fabrication of high-performance wafer-scale p-type field-effect transistors. We achieve an effective hole mobility of ~35 cm2 V–1 s–1, on/off current ratio of ~104 and subthreshold swing of 108 mV dec–1 on an 8-nm-thick film. High-performance tellurium p-type field-effect transistors are fabricated on a wide range of substrates including glass and plastic, further demonstrating the broad applicability of this material. Significantly, three-dimensional circuits are demonstrated by integrating multi-layered transistors on a single chip using sequential lithography, deposition and lift-off processes. Finally, various functional logic gates and circuits are demonstrated.},
doi = {10.1038/s41565-019-0585-9},
journal = {Nature Nanotechnology},
number = 1,
volume = 15,
place = {United States},
year = {2019},
month = {12}
}

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    Works referencing / citing this record:

    Towards flexible CMOS circuits
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