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Title: Scanning Probe Lithography Patterning of Monolayer Semiconductors and Application in Quantifying Edge Recombination

Abstract

Scanning probe lithography is used to directly pattern monolayer transition metal dichalcogenides (TMDs) without the use of a sacrificial resist. Here, using an atomic-force microscope, a negatively biased tip is brought close to the TMD surface. By inducing a water bridge between the tip and the TMD surface, controllable oxidation is achieved at the sub-100 nm resolution. The oxidized flake is then submerged into water for selective oxide removal which leads to controllable patterning. In addition, by changing the oxidation time, thickness tunable patterning of multilayer TMDs is demonstrated. This resist-less process results in exposed edges, overcoming a barrier in traditional resist-based lithography and dry etch where polymeric byproduct layers are often formed at the edges. By patterning monolayers into geometric patterns of different dimensions and measuring the effective carrier lifetime, the non-radiative recombination velocity due to edge defects is extracted. Using this patterning technique, it is shown that selenide TMDs exhibit lower edge recombination velocity as compared to sulfide TMDs. The utility of scanning probe lithography towards understanding material-dependent edge recombination losses without significantly normalizing edge behaviors due to heavy defect generation, while allowing for eventual exploration of edge passivation schemes is highlighted, which is of profound interest formore » nanoscale electronics and optoelectronics.« less

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [1]
  1. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  2. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
OSTI Identifier:
1638998
Alternate Identifier(s):
OSTI ID: 1566196
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 31; Journal Issue: 48; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; edge recombination velocity; 2D materials; scanning probe lithography

Citation Formats

Zhao, Peida, Wang, Ruixuan, Lien, Der‐Hsien, Zhao, Yingbo, Kim, Hyungjin, Cho, Joy, Ahn, Geun Ho, and Javey, Ali. Scanning Probe Lithography Patterning of Monolayer Semiconductors and Application in Quantifying Edge Recombination. United States: N. p., 2019. Web. https://doi.org/10.1002/adma.201900136.
Zhao, Peida, Wang, Ruixuan, Lien, Der‐Hsien, Zhao, Yingbo, Kim, Hyungjin, Cho, Joy, Ahn, Geun Ho, & Javey, Ali. Scanning Probe Lithography Patterning of Monolayer Semiconductors and Application in Quantifying Edge Recombination. United States. https://doi.org/10.1002/adma.201900136
Zhao, Peida, Wang, Ruixuan, Lien, Der‐Hsien, Zhao, Yingbo, Kim, Hyungjin, Cho, Joy, Ahn, Geun Ho, and Javey, Ali. Tue . "Scanning Probe Lithography Patterning of Monolayer Semiconductors and Application in Quantifying Edge Recombination". United States. https://doi.org/10.1002/adma.201900136. https://www.osti.gov/servlets/purl/1638998.
@article{osti_1638998,
title = {Scanning Probe Lithography Patterning of Monolayer Semiconductors and Application in Quantifying Edge Recombination},
author = {Zhao, Peida and Wang, Ruixuan and Lien, Der‐Hsien and Zhao, Yingbo and Kim, Hyungjin and Cho, Joy and Ahn, Geun Ho and Javey, Ali},
abstractNote = {Scanning probe lithography is used to directly pattern monolayer transition metal dichalcogenides (TMDs) without the use of a sacrificial resist. Here, using an atomic-force microscope, a negatively biased tip is brought close to the TMD surface. By inducing a water bridge between the tip and the TMD surface, controllable oxidation is achieved at the sub-100 nm resolution. The oxidized flake is then submerged into water for selective oxide removal which leads to controllable patterning. In addition, by changing the oxidation time, thickness tunable patterning of multilayer TMDs is demonstrated. This resist-less process results in exposed edges, overcoming a barrier in traditional resist-based lithography and dry etch where polymeric byproduct layers are often formed at the edges. By patterning monolayers into geometric patterns of different dimensions and measuring the effective carrier lifetime, the non-radiative recombination velocity due to edge defects is extracted. Using this patterning technique, it is shown that selenide TMDs exhibit lower edge recombination velocity as compared to sulfide TMDs. The utility of scanning probe lithography towards understanding material-dependent edge recombination losses without significantly normalizing edge behaviors due to heavy defect generation, while allowing for eventual exploration of edge passivation schemes is highlighted, which is of profound interest for nanoscale electronics and optoelectronics.},
doi = {10.1002/adma.201900136},
journal = {Advanced Materials},
number = 48,
volume = 31,
place = {United States},
year = {2019},
month = {9}
}

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    Works referencing / citing this record:

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