Bright electroluminescence in ambient conditions from WSe2 p-n diodes using pulsed injection

Han, Kevin; Ahn, Geun Ho; Cho, Joy; Lien, Der-Hsien; Amani, Matin; Desai, Sujay B.; Zhang, George; Kim, Hyungjin; Gupta, Niharika; Javey, Ali; Wu, Ming C.

doi:10.1063/1.5100306

Title: Bright electroluminescence in ambient conditions from WSe₂ p-n diodes using pulsed injection

Journal Article · 01 July 2019 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5100306 · OSTI ID:1638990

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^[2]; Cho, Joy ^[2]; Lien, Der-Hsien ^[2]; Amani, Matin ^[2];

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Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

Transition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require operation under ambient conditions. Here, we study the time-resolved electroluminescence of monolayer WSe₂ p-n junctions under ambient conditions and identify the decay in current over time as the main issue preventing stable device operation. We show that pulsed voltage bias overcomes this issue and results in bright electroluminescence under ambient conditions. This is achieved in a simple single-gate structure, without the use of dual gates, heterostructures, or doping methods. Internal quantum efficiency of electroluminescence reaches ~1%, close to the photoluminescence quantum efficiency, indicating efficient exciton formation with injected carriers. Emission intensity is stable over hours of device operation. Finally, our device exhibits ~15 ns rise and fall times, the fastest direct modulation speed reported for TMDC light-emitting diodes.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); USDOD

Grant/Contract Number:: AC02-05CH11231; ECCS-0939514

OSTI ID:: 1638990

Alternate ID(s):: OSTI ID: 1530477

Journal Information:: Applied Physics Letters, Vol. 115, Issue 1; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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36 MATERIALS SCIENCE
photoluminescence
excitons
P-N junctions
quantum efficiency
light emitting diodes
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optical communications
electroluminescence
2D materials
transition metal chalcogenides

Title: Bright electroluminescence in ambient conditions from WSe2 p-n diodes using pulsed injection

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Title: Bright electroluminescence in ambient conditions from WSe₂ p-n diodes using pulsed injection