Electron beam-induced nanopores in Bernal-stacked hexagonal boron nitride
Abstract
Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. Here, we investigate experimentally and theoretically triangular vacancies in (unconventional) Bernal-stacked AB-h-BN formed using a high-energy electron beam. Due to the geometric configuration of AB-h-BN, triangular pores in different layers are aligned, and their sizes are controlled by the duration of the electron irradiation. Interlayer covalent bonding at the vacancy edge is not favored, as opposed to what occurs in the more common AA'-stacked BN. A variety of monolayer, concentric and bilayer pores in bilayer AB-h-BN are observed in high-resolution transmission electron microscopy and characterized using ab initio simulations. Bilayer pores in AB-h-BN are commonly formed, and grow without breaking the bilayer character. Nanopores in AB-h-BN exhibit a wide range of electronic properties, ranging from half-metallic to non-magnetic and magnetic semiconducting. Therefore, because of the controllability of the pore size, the electronic structure is also highly controllable in these systems, and can potentially be tuned for particular applications.
- Authors:
-
[1];
[5];
- Univ. of California, Berkeley, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Univ. of California, Berkeley, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Kavli Energy NanoScience Institute, Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States). Dept. of Physics and Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Kavli Energy NanoScience Institute, Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States). Dept. of Physics; Kavli Energy NanoScience Institute, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF)
- OSTI Identifier:
- 1639008
- Alternate Identifier(s):
- OSTI ID: 1638322
- Grant/Contract Number:
- AC02-05CH11231; DMR-1926004
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 2; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; transmission electron microscopy; chemical bonding; quantum dots; nanomaterials; electron radiation effects; semiconductors; magnetism; 2D materials; DNA sequencing; electron beams
Citation Formats
Dogan, Mehmet, Gilbert, S. Matt, Pham, Thang, Shevitski, Brian, Ercius, Peter, Aloni, Shaul, Zettl, Alex, and Cohen, Marvin L. Electron beam-induced nanopores in Bernal-stacked hexagonal boron nitride. United States: N. p., 2020.
Web. doi:10.1063/5.0010891.
Dogan, Mehmet, Gilbert, S. Matt, Pham, Thang, Shevitski, Brian, Ercius, Peter, Aloni, Shaul, Zettl, Alex, & Cohen, Marvin L. Electron beam-induced nanopores in Bernal-stacked hexagonal boron nitride. United States. https://doi.org/10.1063/5.0010891
Dogan, Mehmet, Gilbert, S. Matt, Pham, Thang, Shevitski, Brian, Ercius, Peter, Aloni, Shaul, Zettl, Alex, and Cohen, Marvin L. Mon .
"Electron beam-induced nanopores in Bernal-stacked hexagonal boron nitride". United States. https://doi.org/10.1063/5.0010891. https://www.osti.gov/servlets/purl/1639008.
@article{osti_1639008,
title = {Electron beam-induced nanopores in Bernal-stacked hexagonal boron nitride},
author = {Dogan, Mehmet and Gilbert, S. Matt and Pham, Thang and Shevitski, Brian and Ercius, Peter and Aloni, Shaul and Zettl, Alex and Cohen, Marvin L.},
abstractNote = {Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. Here, we investigate experimentally and theoretically triangular vacancies in (unconventional) Bernal-stacked AB-h-BN formed using a high-energy electron beam. Due to the geometric configuration of AB-h-BN, triangular pores in different layers are aligned, and their sizes are controlled by the duration of the electron irradiation. Interlayer covalent bonding at the vacancy edge is not favored, as opposed to what occurs in the more common AA'-stacked BN. A variety of monolayer, concentric and bilayer pores in bilayer AB-h-BN are observed in high-resolution transmission electron microscopy and characterized using ab initio simulations. Bilayer pores in AB-h-BN are commonly formed, and grow without breaking the bilayer character. Nanopores in AB-h-BN exhibit a wide range of electronic properties, ranging from half-metallic to non-magnetic and magnetic semiconducting. Therefore, because of the controllability of the pore size, the electronic structure is also highly controllable in these systems, and can potentially be tuned for particular applications.},
doi = {10.1063/5.0010891},
journal = {Applied Physics Letters},
number = 2,
volume = 117,
place = {United States},
year = {Mon Jul 13 00:00:00 EDT 2020},
month = {Mon Jul 13 00:00:00 EDT 2020}
}
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