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Title: Elimination of Response to Relative Humidity Changes in Chemical-Sensitive Field-Effect Transistors

Abstract

Detecting accurate concentrations of gas in environments with dynamically changing relative humidity conditions has been a challenge in gas sensing technology. Here, we report a method to eliminate effects of humidity response in chemical-sensitive field-effect transistors using microheaters. Using a hydrogen gas sensor with Pt/FOTS active material as a test case, we demonstrate that a sensor response of 3844% to a relative humidity change of 50 to 90% at 25 °C can be reduced to a negligible response of 11.6% by utilizing microheaters. We also show the advantage of this technique in maintaining the same sensitivity in changing ambient temperatures and its application to the nitrogen dioxide gas sensors.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1];  [2]; ORCiD logo [2]; ORCiD logo [1]
  1. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering & Computer Sciences and Berkeley Sensor and Actuator Center; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  2. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Bakar Fellows Program
OSTI Identifier:
1638197
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
ACS Sensors
Additional Journal Information:
Journal Volume: 4; Journal Issue: 7; Journal ID: ISSN 2379-3694
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; gas sensors; hydrogen; humidity; microheaters; temperature dependence

Citation Formats

Gupta, Niharika, Fahad, Hossain M., Amani, Matin, Song, Xiaohui, Scott, Mary, and Javey, Ali. Elimination of Response to Relative Humidity Changes in Chemical-Sensitive Field-Effect Transistors. United States: N. p., 2019. Web. doi:10.1021/acssensors.9b00637.
Gupta, Niharika, Fahad, Hossain M., Amani, Matin, Song, Xiaohui, Scott, Mary, & Javey, Ali. Elimination of Response to Relative Humidity Changes in Chemical-Sensitive Field-Effect Transistors. United States. https://doi.org/10.1021/acssensors.9b00637
Gupta, Niharika, Fahad, Hossain M., Amani, Matin, Song, Xiaohui, Scott, Mary, and Javey, Ali. Tue . "Elimination of Response to Relative Humidity Changes in Chemical-Sensitive Field-Effect Transistors". United States. https://doi.org/10.1021/acssensors.9b00637. https://www.osti.gov/servlets/purl/1638197.
@article{osti_1638197,
title = {Elimination of Response to Relative Humidity Changes in Chemical-Sensitive Field-Effect Transistors},
author = {Gupta, Niharika and Fahad, Hossain M. and Amani, Matin and Song, Xiaohui and Scott, Mary and Javey, Ali},
abstractNote = {Detecting accurate concentrations of gas in environments with dynamically changing relative humidity conditions has been a challenge in gas sensing technology. Here, we report a method to eliminate effects of humidity response in chemical-sensitive field-effect transistors using microheaters. Using a hydrogen gas sensor with Pt/FOTS active material as a test case, we demonstrate that a sensor response of 3844% to a relative humidity change of 50 to 90% at 25 °C can be reduced to a negligible response of 11.6% by utilizing microheaters. We also show the advantage of this technique in maintaining the same sensitivity in changing ambient temperatures and its application to the nitrogen dioxide gas sensors.},
doi = {10.1021/acssensors.9b00637},
journal = {ACS Sensors},
number = 7,
volume = 4,
place = {United States},
year = {2019},
month = {5}
}

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