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Title: Magnetism and transport in transparent high-mobility BaSnO 3 films doped with La, Pr, Nd, and Gd

Abstract

Here, we have explored the effect of magnetic rare-earth dopants substitutionally incorporated on the Ba sites of $$BaSnO_3$$ in terms of electronic transport, magnetism, and optical properties. We show that for $$Ba_{0.92}R_{0.08}SnO_3$$ thin films (where $R=$ La,Pr,Nd,Gd), there is a linear increase of mobility with carrier concentration across all doping schemes. La-doped films have the highest mobilities, followed by Pr- and Nd-doped films. Gd-doped samples have the largest ionic size mismatch with the Ba site and correspondingly the lowest carrier concentrations and electron mobilities. However, crystallinity does not appear to be a strong predictor of transport phenomena; our results suggest that point defects more than grain boundaries are key ingredients in tuning the conduction of $$BaSnO_3$$ films grown by pulsed laser deposition. Pronounced, nonhysteretic x-ray magnetic dichroism signals are observed for Pr-, Nd-, and Gd-doped samples, indicating paramagnetism. Finally, we probe the optical constants for each of the $$BaSnO_3$$ doping schemes and note that there is little change in the transmittance across all samples. Together these results shed light on conduction mechanisms in $$BaSnO_3$$ doped with rare-earth cations.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [1]; ORCiD logo [5]; ORCiD logo [6];  [7];  [7];  [8];  [9]; ORCiD logo [5]; ORCiD logo [10];  [11]
+ Show Author Affiliations
  1. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials & Dept. of Materials Science and Engineering
  2. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
  3. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate; Univ. of Oregon, Eugene, OR (United States). Department of Chemistry and Biochemistry
  4. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
  5. Univ. of Minnesota, Minneapolis, MN (United States). Department of Chemical Engineering and Materials Science
  6. Univ. of Minnesota, Minneapolis, MN (United States). Characterization Facility
  7. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  8. Univ. of Oregon, Eugene, OR (United States). Department of Chemistry and Biochemistry
  9. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Cornell Univ., Ithaca, NY (United States). Cornell High Energy Synchrotron Source (CHESS)
  10. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate; Univ. of Liverpool (United Kingdom). School of Engineering & School of Physical Sciences
  11. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Biological and Environmental Research (BER), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1637300
Grant/Contract Number:  
AC02-05CH11231; AC05-76RL01830; 1762971; ECCS-1542152; FA9550-19-1-0245
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 12; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electrical conductivity; magnetic interactions; magnetic susceptibility; paramagnetism

Citation Formats

Alaan, Urusa S., Wong, Franklin J., Ditto, Jeffrey J., Robertson, Alexander W., Lindgren, Emily, Prakash, Abhinav, Haugstad, Greg, Shafer, Padraic, N'Diaye, Alpha T., Johnson, David, Arenholz, Elke, Jalan, Bharat, Browning, Nigel D., and Suzuki, Yuri. Magnetism and transport in transparent high-mobility BaSnO3 films doped with La, Pr, Nd, and Gd. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.124402.
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Alaan, Urusa S., Wong, Franklin J., Ditto, Jeffrey J., Robertson, Alexander W., Lindgren, Emily, Prakash, Abhinav, Haugstad, Greg, Shafer, Padraic, N'Diaye, Alpha T., Johnson, David, Arenholz, Elke, Jalan, Bharat, Browning, Nigel D., & Suzuki, Yuri. Magnetism and transport in transparent high-mobility BaSnO3 films doped with La, Pr, Nd, and Gd. United States. https://doi.org/10.1103/PhysRevMaterials.3.124402
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Alaan, Urusa S., Wong, Franklin J., Ditto, Jeffrey J., Robertson, Alexander W., Lindgren, Emily, Prakash, Abhinav, Haugstad, Greg, Shafer, Padraic, N'Diaye, Alpha T., Johnson, David, Arenholz, Elke, Jalan, Bharat, Browning, Nigel D., and Suzuki, Yuri. Mon . "Magnetism and transport in transparent high-mobility BaSnO3 films doped with La, Pr, Nd, and Gd". United States. https://doi.org/10.1103/PhysRevMaterials.3.124402. https://www.osti.gov/servlets/purl/1637300.
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@article{osti_1637300,
title = {Magnetism and transport in transparent high-mobility BaSnO3 films doped with La, Pr, Nd, and Gd},
author = {Alaan, Urusa S. and Wong, Franklin J. and Ditto, Jeffrey J. and Robertson, Alexander W. and Lindgren, Emily and Prakash, Abhinav and Haugstad, Greg and Shafer, Padraic and N'Diaye, Alpha T. and Johnson, David and Arenholz, Elke and Jalan, Bharat and Browning, Nigel D. and Suzuki, Yuri},
abstractNote = {Here, we have explored the effect of magnetic rare-earth dopants substitutionally incorporated on the Ba sites of $BaSnO_3$ in terms of electronic transport, magnetism, and optical properties. We show that for $Ba_{0.92}R_{0.08}SnO_3$ thin films (where $R=$ La,Pr,Nd,Gd), there is a linear increase of mobility with carrier concentration across all doping schemes. La-doped films have the highest mobilities, followed by Pr- and Nd-doped films. Gd-doped samples have the largest ionic size mismatch with the Ba site and correspondingly the lowest carrier concentrations and electron mobilities. However, crystallinity does not appear to be a strong predictor of transport phenomena; our results suggest that point defects more than grain boundaries are key ingredients in tuning the conduction of $BaSnO_3$ films grown by pulsed laser deposition. Pronounced, nonhysteretic x-ray magnetic dichroism signals are observed for Pr-, Nd-, and Gd-doped samples, indicating paramagnetism. Finally, we probe the optical constants for each of the $BaSnO_3$ doping schemes and note that there is little change in the transmittance across all samples. Together these results shed light on conduction mechanisms in $BaSnO_3$ doped with rare-earth cations.},
doi = {10.1103/PhysRevMaterials.3.124402},
journal = {Physical Review Materials},
number = 12,
volume = 3,
place = {United States},
year = {Mon Dec 09 00:00:00 EST 2019},
month = {Mon Dec 09 00:00:00 EST 2019}
}
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https://doi.org/10.1103/PhysRevMaterials.3.124402
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