Title: Magnetism and transport in transparent high-mobility BaSnO3 films doped with La, Pr, Nd, and Gd

Journal Article · · Physical Review Materials
ORCiD logo [1];  [2];  [3];  [4];  [1]; ORCiD logo [5]; ORCiD logo [6];  [7];  [7];  [8];  [9]; ORCiD logo [5]; ORCiD logo [10];  [11]
  1. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials & Dept. of Materials Science and Engineering
  2. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
  3. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate; Univ. of Oregon, Eugene, OR (United States). Department of Chemistry and Biochemistry
  4. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
  5. Univ. of Minnesota, Minneapolis, MN (United States). Department of Chemical Engineering and Materials Science
  6. Univ. of Minnesota, Minneapolis, MN (United States). Characterization Facility
  7. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  8. Univ. of Oregon, Eugene, OR (United States). Department of Chemistry and Biochemistry
  9. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Cornell Univ., Ithaca, NY (United States). Cornell High Energy Synchrotron Source (CHESS)
  10. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate; Univ. of Liverpool (United Kingdom). School of Engineering & School of Physical Sciences
  11. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials

Here, we have explored the effect of magnetic rare-earth dopants substitutionally incorporated on the Ba sites of $$BaSnO_3$$ in terms of electronic transport, magnetism, and optical properties. We show that for $$Ba_{0.92}R_{0.08}SnO_3$$ thin films (where $R=$ La,Pr,Nd,Gd), there is a linear increase of mobility with carrier concentration across all doping schemes. La-doped films have the highest mobilities, followed by Pr- and Nd-doped films. Gd-doped samples have the largest ionic size mismatch with the Ba site and correspondingly the lowest carrier concentrations and electron mobilities. However, crystallinity does not appear to be a strong predictor of transport phenomena; our results suggest that point defects more than grain boundaries are key ingredients in tuning the conduction of $$BaSnO_3$$ films grown by pulsed laser deposition. Pronounced, nonhysteretic x-ray magnetic dichroism signals are observed for Pr-, Nd-, and Gd-doped samples, indicating paramagnetism. Finally, we probe the optical constants for each of the $$BaSnO_3$$ doping schemes and note that there is little change in the transmittance across all samples. Together these results shed light on conduction mechanisms in $$BaSnO_3$$ doped with rare-earth cations.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Biological and Environmental Research (BER), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231; AC05-76RL01830
OSTI ID:
1637300
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 12 Vol. 3; ISSN PRMHAR; ISSN 2475-9953
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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