TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature

DelaCruz, Steven; Wang, Zhongtao; Cheng, Ping; Carraro, Carlo; Maboudian, Roya

doi:10.1016/j.tsf.2018.11.058

Title: TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature

Abstract

The effect of high-temperature annealing on tungsten (W) films deposited on silicon carbide (SiC) with and without a titanium nitride (TiN) diffusion barrier was examined as a function of time. Evolutions in phase composition, surface morphology, and roughness from annealing at 1273 K were investigated for up to 24 h. Without a TiN diffusion barrier, solid state reactions between the W film and SiC substrate led to the formation of W₅Si₃, W₂C, and WC species and the rise of an inhomogeneous surface structure that was initially web-like and later discontinuous. Severe roughening on the order of the initial film thickness was observed. Incorporation of a 100 nm TiN diffusion barrier suppressed the formation of W₅Si₃ and W₂C and only trace WC could be detected due to species diffusion through TiN grain boundaries. Changes in the surface structure and roughness were minimal. Our results warrant consideration of TiN as an effective diffusion barrier for W on SiC systems where structural stability at high temperatures is highly desired.

Authors:

^[1]; Wang, Zhongtao ^[2]; Cheng, Ping ^[3]; Carraro, Carlo ^[1];

^[1]

University of California, Berkeley, CA (United States)
University of California, Berkeley, CA (United States); Harbin Institute of Technology (China)
University of California, Berkeley, CA (United States); Shanghai Jiao Tong University (China)

Publication Date:: Thu Nov 29 00:00:00 EST 2018

Research Org.:: Stanford Univ., CA (United States); Univ. of California, Berkeley, CA (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1613677

Alternate Identifier(s):: OSTI ID: 1636052

Grant/Contract Number:: AR0000664; AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: Thin Solid Films

Additional Journal Information:: Journal Volume: 670; Journal Issue: C; Journal ID: ISSN 0040-6090

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; titanium nitride; tungsten; silicon carbide; sputtering; diffusion barrier; annealing; X-ray diffraction; thermionic energy converter

Citation Formats


                    DelaCruz, Steven, Wang, Zhongtao, Cheng, Ping, Carraro, Carlo, and Maboudian, Roya. TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature.  United States: N. p., 2018. 
Web.  doi:10.1016/j.tsf.2018.11.058.

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                    DelaCruz, Steven, Wang, Zhongtao, Cheng, Ping, Carraro, Carlo, & Maboudian, Roya. TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature.  United States.  https://doi.org/10.1016/j.tsf.2018.11.058

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                    DelaCruz, Steven, Wang, Zhongtao, Cheng, Ping, Carraro, Carlo, and Maboudian, Roya. Thu .  
"TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature".  United States.  https://doi.org/10.1016/j.tsf.2018.11.058.  https://www.osti.gov/servlets/purl/1613677.

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@article{osti_1613677,

  title        = {TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature},

  author       = {DelaCruz, Steven and Wang, Zhongtao and Cheng, Ping and Carraro, Carlo and Maboudian, Roya},

  abstractNote = {The effect of high-temperature annealing on tungsten (W) films deposited on silicon carbide (SiC) with and without a titanium nitride (TiN) diffusion barrier was examined as a function of time. Evolutions in phase composition, surface morphology, and roughness from annealing at 1273 K were investigated for up to 24 h. Without a TiN diffusion barrier, solid state reactions between the W film and SiC substrate led to the formation of W5Si3, W2C, and WC species and the rise of an inhomogeneous surface structure that was initially web-like and later discontinuous. Severe roughening on the order of the initial film thickness was observed. Incorporation of a 100 nm TiN diffusion barrier suppressed the formation of W5Si3 and W2C and only trace WC could be detected due to species diffusion through TiN grain boundaries. Changes in the surface structure and roughness were minimal. Our results warrant consideration of TiN as an effective diffusion barrier for W on SiC systems where structural stability at high temperatures is highly desired.},

  doi          = {10.1016/j.tsf.2018.11.058},

  journal      = {Thin Solid Films},

  number       = C,

  volume       = 670,

  place        = {United States},

  year         = {Thu Nov 29 00:00:00 EST 2018},

  month        = {Thu Nov 29 00:00:00 EST 2018}

}

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Similar Records

Title: TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature

Abstract

Citation Formats

Interfacial reactions and mechanical properties of W–SiC in-situ joints for plasma facing components journal, August 2004

Stability of W as electrical contact on 6HSiC: phase relations and interface reactions in the ternary system WSiC journal, November 1995

Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide journal, January 2015

Calculations of tungsten silicide and carbide formation on SiC using the Gibbs free energy journal, March 2000

Interfacial reactions of W thin film on single-crystal (001) β-SiC journal, January 1995

Interfacial reactions and surface analysis of W thin film on 6H-SiC journal, March 2016

The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC journal, July 2016

Surface and interface structural analysis of W deposited on 6H–SiC substrates annealed in argon journal, January 2017

Effect of Annealing of Titanium Nitride on the Diffusion Barrier Property in Cu Metallization journal, September 1995

Correlation between microstructure and barrier properties of TiN thin films used Cu interconnects journal, September 2002

Thermal stability of titanium nitride diffusion barrier films for advanced silver interconnects journal, October 2004

An investigation of the compatibility of refractory compounds of titanium with refractory metals in vacuum journal, January 1977

Low energy ion‐assisted deposition of titanium nitride ohmic contacts on alpha (6H)‐silicon carbide journal, November 1991

Chemical and structural analyses of the titanium nitride/alpha (6H)‐silicon carbide interface journal, July 1992

Ohmic contacts to p-6H–SiC using focused ion-beam surface-modification and pulsed laser epitaxial TiN deposition journal, December 1998

Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering journal, October 1996

Fabrication and properties of W–20Cu alloy reinforced by titanium nitride coated SiC fibers journal, November 2013

Reactivity of M/TiN/SiC systems (M = W and Mo) at high temperature journal, February 2010

Synthesis and Characterization of Potassium Metal/Graphitic Carbon Nanofiber Intercalates journal, April 2008

Microfabricated Thermally Isolated Low Work-Function Emitter journal, October 2014

Defects induced by solid state reactions at the tungsten-silicon carbide interface journal, April 2018

Optimal emitter-collector gap for thermionic energy converters journal, April 2012

Biaxial alignment in sputter deposited thin films journal, December 2006

Interfacial reactions and mechanical properties of W–SiC in-situ joints for plasma facing components
journal, August 2004

Stability of W as electrical contact on 6HSiC: phase relations and interface reactions in the ternary system WSiC
journal, November 1995

Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide
journal, January 2015

Calculations of tungsten silicide and carbide formation on SiC using the Gibbs free energy
journal, March 2000

Interfacial reactions of W thin film on single-crystal (001) β-SiC
journal, January 1995

Interfacial reactions and surface analysis of W thin film on 6H-SiC
journal, March 2016

The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC
journal, July 2016

Surface and interface structural analysis of W deposited on 6H–SiC substrates annealed in argon
journal, January 2017

Effect of Annealing of Titanium Nitride on the Diffusion Barrier Property in Cu Metallization
journal, September 1995

Correlation between microstructure and barrier properties of TiN thin films used Cu interconnects
journal, September 2002

Thermal stability of titanium nitride diffusion barrier films for advanced silver interconnects
journal, October 2004

An investigation of the compatibility of refractory compounds of titanium with refractory metals in vacuum
journal, January 1977

Low energy ion‐assisted deposition of titanium nitride ohmic contacts on alpha (6H)‐silicon carbide
journal, November 1991

Chemical and structural analyses of the titanium nitride/alpha (6H)‐silicon carbide interface
journal, July 1992

Ohmic contacts to p-6H–SiC using focused ion-beam surface-modification and pulsed laser epitaxial TiN deposition
journal, December 1998

Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering
journal, October 1996

Fabrication and properties of W–20Cu alloy reinforced by titanium nitride coated SiC fibers
journal, November 2013

Reactivity of M/TiN/SiC systems (M = W and Mo) at high temperature
journal, February 2010

Synthesis and Characterization of Potassium Metal/Graphitic Carbon Nanofiber Intercalates
journal, April 2008

Microfabricated Thermally Isolated Low Work-Function Emitter
journal, October 2014

Defects induced by solid state reactions at the tungsten-silicon carbide interface
journal, April 2018

Optimal emitter-collector gap for thermionic energy converters
journal, April 2012

Biaxial alignment in sputter deposited thin films
journal, December 2006