Structural characteristics of m-plane AlN substrates and homoepitaxial films

Bobea Graziano, Milena; Bryan, Isaac; Bryan, Zachary; Kirste, Ronny; Tweedie, James; Collazo, Ramon; Sitar, Zlatko

doi:10.1016/j.jcrysgro.2018.07.012

Title: Structural characteristics of m-plane AlN substrates and homoepitaxial films

Journal Article · 31 January 2019 · Journal of Crystal Growth

DOI: https://doi.org/10.1016/j.jcrysgro.2018.07.012 · OSTI ID:1635968

Bobea Graziano, Milena; Bryan, Isaac; Bryan, Zachary; Kirste, Ronny; Tweedie, James; Collazo, Ramon; Sitar, Zlatko

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000299; AR0000299

OSTI ID:: 1635968

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 507; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

References (36)

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High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m -plane Bulk GaN Substrate Iso, Kenji; Yamada, Hisashi; Hirasawa, Hirohiko Japanese Journal of Applied Physics, Vol. 46, Issue 40, p. L960-L962 https://doi.org/10.1143/JJAP.46.L960	journal	October 2007
Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths of m -Plane GaN McLaurin, Melvin B.; Hirai, Asako; Young, Erin Japanese Journal of Applied Physics, Vol. 47, Issue 7 https://doi.org/10.1143/JJAP.47.5429	journal	July 2008
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Advances in Bulk Crystal Growth of AlN and GaN Ehrentraut, Dirk; Sitar, Zlatko MRS Bulletin, Vol. 34, Issue 4 https://doi.org/10.1557/mrs2009.76	journal	April 2009

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