Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition

Journal Article · 31 January 2019 · Journal of Crystal Growth

DOI: https://doi.org/10.1016/j.jcrysgro.2018.10.055 · OSTI ID:1635934

Liu, X. F.; Yan, G. G.; Shen, Z. W.; Wen, Z. X.; Chen, J.; He, Y. W.; Zhao, W. S.; Wang, L.; Guan, M.; Zhang, F.; Sun, G. S.; Zeng, Y. P.

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• Sponsoring Organization: USDOE Office of Electricity (OE), Advanced Grid Research & Development. Power Systems Engineering Research
• OSTI ID: 1635934
• Journal Information: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 507; ISSN 0022-0248
• Publisher: ElsevierCopyright Statement
• Country of Publication: Netherlands
• Language: English