skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Abstract

We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. Here, the detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1];  [3];  [3];  [4];  [1]
  1. Univ. of California, Santa Barbara, CA (United States)
  2. Vilnius Univ. (Lithuania)
  3. Ecole Polytechnique, Palaiseau Cedex (France)
  4. Univ. of California, Santa Barbara, CA (United States); Ecole Polytechnique, Palaiseau Cedex (France)
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office
Contributing Org.:
Ecole Polytechnique Paris Vilnius University
OSTI Identifier:
1635222
Alternate Identifier(s):
OSTI ID: 1602582
Grant/Contract Number:  
EE0007096
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Light emitting diodes; electronic bandstructure; electroluminescence; quantum efficiency; quantum wells; electronic transport

Citation Formats

Myers, Daniel J., Espenlaub, Andrew C., Gelzinyte, Kristina, Young, Erin C., Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, and Speck, James S.. Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy. United States: N. p., 2020. Web. https://doi.org/10.1063/1.5125605.
Myers, Daniel J., Espenlaub, Andrew C., Gelzinyte, Kristina, Young, Erin C., Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, & Speck, James S.. Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy. United States. https://doi.org/10.1063/1.5125605
Myers, Daniel J., Espenlaub, Andrew C., Gelzinyte, Kristina, Young, Erin C., Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, and Speck, James S.. Mon . "Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy". United States. https://doi.org/10.1063/1.5125605. https://www.osti.gov/servlets/purl/1635222.
@article{osti_1635222,
title = {Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy},
author = {Myers, Daniel J. and Espenlaub, Andrew C. and Gelzinyte, Kristina and Young, Erin C. and Martinelli, Lucio and Peretti, Jacques and Weisbuch, Claude and Speck, James S.},
abstractNote = {We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. Here, the detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.},
doi = {10.1063/1.5125605},
journal = {Applied Physics Letters},
number = 9,
volume = 116,
place = {United States},
year = {2020},
month = {3}
}

Works referenced in this record:

Origin of electrons emitted into vacuum from InGaN light emitting diodes
journal, August 2014

  • Iveland, Justin; Piccardo, Marco; Martinelli, Lucio
  • Applied Physics Letters, Vol. 105, Issue 5
  • DOI: 10.1063/1.4892473

Negative electron affinity and electron emission at cesiated GaN and AlN surfaces
journal, August 2000


Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes
journal, August 2018

  • Myers, Daniel J.; Gelžinytė, Kristina; Ho, Wan Ying
  • Journal of Applied Physics, Vol. 124, Issue 5
  • DOI: 10.1063/1.5030208

Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
journal, June 2014


Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy
journal, December 2016

  • Marcinkevičius, Saulius; Uždavinys, Tomas K.; Foronda, Humberto M.
  • Physical Review B, Vol. 94, Issue 23
  • DOI: 10.1103/PhysRevB.94.235205

Time-resolved intervalley transitions in GaN single crystals
journal, February 2007

  • Wu, S.; Geiser, P.; Jun, J.
  • Journal of Applied Physics, Vol. 101, Issue 4
  • DOI: 10.1063/1.2496399

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
journal, March 1994

  • Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
  • Applied Physics Letters, Vol. 64, Issue 13, p. 1687-1689
  • DOI: 10.1063/1.111832

High-power InGaN light emitting diodes grown by molecular beam epitaxy
journal, January 2004

  • Johnson, K.; Bousquet, V.; Hooper, S. E.
  • Electronics Letters, Vol. 40, Issue 20
  • DOI: 10.1049/el:20046144

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy
journal, November 2016

  • Young, E. C.; Grandjean, N.; Mates, T. E.
  • Applied Physics Letters, Vol. 109, Issue 21
  • DOI: 10.1063/1.4968586

Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting
journal, March 2018


First-principles theory of nonradiative carrier capture via multiphonon emission
journal, August 2014


Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
journal, May 2016


Auger recombination in InGaN measured by photoluminescence
journal, October 2007

  • Shen, Y. C.; Mueller, G. O.; Watanabe, S.
  • Applied Physics Letters, Vol. 91, Issue 14
  • DOI: 10.1063/1.2785135

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
journal, August 2012

  • Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung
  • Applied Physics Letters, Vol. 101, Issue 8
  • DOI: 10.1063/1.4747532

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
journal, September 2014

  • Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.
  • Journal of Applied Physics, Vol. 116, Issue 11
  • DOI: 10.1063/1.4896103

Auger effect involving recombination centres
journal, February 1964

  • Landsberg, P. T.; Evans, D. A.; Rhys-Roberts, C.
  • Proceedings of the Physical Society, Vol. 83, Issue 2
  • DOI: 10.1088/0370-1328/83/2/116

The first 70 semiconductor Auger processes
journal, November 1978


Auger recombination and impact ionization involving traps in semiconductors
journal, December 1964

  • Landsberg, P. T.; Rhys-Roberts, C.; Lal, P.
  • Proceedings of the Physical Society, Vol. 84, Issue 6
  • DOI: 10.1088/0370-1328/84/6/311

Auger Recombination with Traps
journal, February 1980


Auger Recombination with Deep Impurities in Indirect Band Gap Semiconductors
journal, December 1981


Multiphonon broadening of impact ionisation and Auger recombination involving traps in semiconductors
journal, July 1983


Auger Recombination of Electrons via Deep and Shallow Acceptors
journal, November 1985

  • Khalfin, V. B.; Strikha, M. V.; Yassievich, I. N.
  • physica status solidi (b), Vol. 132, Issue 1
  • DOI: 10.1002/pssb.2221320121

Nonradiative recombination via deep impurity levels in semiconductors: The excitonic Auger mechanism
journal, February 1988


Auger recombination with traps in quantum-well semiconductors
journal, June 1993

  • Haug, A.
  • Applied Physics A Solids and Surfaces, Vol. 56, Issue 6
  • DOI: 10.1007/BF00331406

Experimental proof of impurity Auger recombination in silicon
journal, December 1985


Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop
journal, September 2019

  • Myers, Daniel J.; Gelžinytė, Kristina; Alhassan, Abdullah I.
  • Physical Review B, Vol. 100, Issue 12
  • DOI: 10.1103/PhysRevB.100.125303

Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
journal, December 2007

  • Gardner, N. F.; Müller, G. O.; Shen, Y. C.
  • Applied Physics Letters, Vol. 91, Issue 24
  • DOI: 10.1063/1.2807272

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes
journal, April 2018

  • Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji
  • Applied Physics Letters, Vol. 112, Issue 14
  • DOI: 10.1063/1.5021475

Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs
journal, November 2019

  • Espenlaub, Andrew C.; Myers, Daniel J.; Young, Erin C.
  • Journal of Applied Physics, Vol. 126, Issue 18
  • DOI: 10.1063/1.5096773

On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
journal, March 2015

  • Piprek, Joachim; Römer, Friedhard; Witzigmann, Bernd
  • Applied Physics Letters, Vol. 106, Issue 10
  • DOI: 10.1063/1.4914833