Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Myers, Daniel J.; Espenlaub, Andrew C.; Gelzinyte, Kristina; Young, Erin C.; Martinelli, Lucio; Peretti, Jacques; Weisbuch, Claude; Speck, James S.

doi:10.1063/1.5125605

Title: Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Abstract

We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. Here, the detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.

Authors:

^[1];

^[2];

^[1]; Martinelli, Lucio ^[3]; Peretti, Jacques ^[3]; Weisbuch, Claude ^[4]; Speck, James S. ^[1]

Univ. of California, Santa Barbara, CA (United States)
Vilnius Univ. (Lithuania)
Ecole Polytechnique, Palaiseau Cedex (France)
Univ. of California, Santa Barbara, CA (United States); Ecole Polytechnique, Palaiseau Cedex (France)

Publication Date:: 2020-03-02

Research Org.:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office

Contributing Org.:: Ecole Polytechnique Paris Vilnius University

OSTI Identifier:: 1635222

Alternate Identifier(s):: OSTI ID: 1602582

Grant/Contract Number:: EE0007096

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 116; Journal Issue: 9; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Light emitting diodes; electronic bandstructure; electroluminescence; quantum efficiency; quantum wells; electronic transport

Citation Formats


                    Myers, Daniel J., Espenlaub, Andrew C., Gelzinyte, Kristina, Young, Erin C., Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, and Speck, James S.. Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy.  United States: N. p., 2020. 
Web.  doi:10.1063/1.5125605.

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                    Myers, Daniel J., Espenlaub, Andrew C., Gelzinyte, Kristina, Young, Erin C., Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, & Speck, James S.. Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy.  United States.  https://doi.org/10.1063/1.5125605

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                    Myers, Daniel J., Espenlaub, Andrew C., Gelzinyte, Kristina, Young, Erin C., Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, and Speck, James S.. Mon .  
"Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy".  United States.  https://doi.org/10.1063/1.5125605.  https://www.osti.gov/servlets/purl/1635222.

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@article{osti_1635222,

  title        = {Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy},

  author       = {Myers, Daniel J. and Espenlaub, Andrew C. and Gelzinyte, Kristina and Young, Erin C. and Martinelli, Lucio and Peretti, Jacques and Weisbuch, Claude and Speck, James S.},

  abstractNote = {We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. Here, the detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.},

  doi          = {10.1063/1.5125605},

  journal      = {Applied Physics Letters},

  number       = 9,

  volume       = 116,

  place        = {United States},

  year         = {2020},

  month        = {3}

}

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Title: Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Abstract

Citation Formats

Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop journal, September 2019

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy journal, November 2016

Auger recombination with traps in quantum-well semiconductors journal, June 1993

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop journal, April 2013

Auger recombination and impact ionization involving traps in semiconductors journal, December 1964

Auger Recombination with Traps journal, February 1980

Experimental proof of impurity Auger recombination in silicon journal, December 1985

Negative electron affinity and electron emission at cesiated GaN and AlN surfaces journal, August 2000

On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements journal, March 2015

Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy journal, June 2014

Auger Recombination of Electrons via Deep and Shallow Acceptors journal, November 1985

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior journal, September 2014

Time-resolved intervalley transitions in GaN single crystals journal, February 2007

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes journal, April 2018

Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs journal, November 2019

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes journal, March 1994

Auger recombination in InGaN measured by photoluminescence journal, October 2007

The first 70 semiconductor Auger processes journal, November 1978

Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy journal, December 2016

First-principles theory of nonradiative carrier capture via multiphonon emission journal, August 2014

Origin of electrons emitted into vacuum from InGaN light emitting diodes journal, August 2014

Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes journal, August 2018

Auger Recombination with Deep Impurities in Indirect Band Gap Semiconductors journal, December 1981

Nonradiative recombination via deep impurity levels in semiconductors: The excitonic Auger mechanism journal, February 1988

Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors journal, May 2016

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure journal, August 2012

Auger effect involving recombination centres journal, February 1964

Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2 journal, December 2007

Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting journal, March 2018

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Multiphonon broadening of impact ionisation and Auger recombination involving traps in semiconductors journal, July 1983

Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop
journal, September 2019

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy
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Auger recombination with traps in quantum-well semiconductors
journal, June 1993

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
journal, April 2013

Auger recombination and impact ionization involving traps in semiconductors
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Auger Recombination with Traps
journal, February 1980

Experimental proof of impurity Auger recombination in silicon
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Negative electron affinity and electron emission at cesiated GaN and AlN surfaces
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On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
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The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
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Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
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Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
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