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Title: Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer

Abstract

Local strain-dependent spin-polarized electronic structure of a two-dimensional (2D) magnetic layer is an exciting property for practical applications. For example, it holds the promise for advanced ultrathin spintronic nanodevices with customized electronic and magnetic properties by local strain engineering. Here, we demonstrate that the spin-polarized electronic structure of a 2D manganese gallium nitride (MnGaN-2D) magnetic monolayer is sensitive to intrinsic local lattice strain, as proven by first-principles calculations and indicated by scanning tunneling spectroscopy measurements. Atomic resolution images reveal a highly non-Gaussian lattice spacing/strain distribution, while the spectroscopy reveals variations in the electronic density of states. Simulations of the MnGaN-2D monolayer based on first-principles calculations, including both isotropic and anisotropic strains, confirm a highly strain-dependent manganese partial density of states. Spin-orbit coupling is included which indicates either out-of-plane perpendicular magnetic anisotropy (PMA) or in-plane magnetic anisotropy, dependent on the type of strain whether compressive or tensile, suggesting that MnGaN-2D is magnetoelastic. The MnGaN-2D PMA is further supported by superconducting quantum interference device magnetometry measurements which reveal a high spin polarization of ~ 79 % at room temperature.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3]; ORCiD logo [1]; ORCiD logo [3]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [1]
  1. Ohio Univ., Athens, OH (United States)
  2. Comisión Nacional de Energía Atómica (CNEA), Buenos Aires (Argentina); Inst. de Nanociencia y Nanotecnología INN (CNEA-CONICET), Buenos Aires (Argentina)
  3. The Ohio State Univ., Columbus, OH (United States)
Publication Date:
Research Org.:
Ohio Univ., Athens, OH (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1635151
Grant/Contract Number:  
FG02-06ER46317; SC0001304
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 6; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; density of states; magnetic anisotropy; spintronics; surfaces; density functional theory; magnetization measurements; scanning tunneling spectroscopy

Citation Formats

Ma, Yingqiao, Hunt, Diego, Meng, Kengyuan, Erickson, Tyler, Yang, Fengyuan, Barral, María Andrea, Ferrari, Valeria, and Smith, Arthur R. Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer. United States: N. p., 2020. Web. https://doi.org/10.1103/PhysRevMaterials.4.064006.
Ma, Yingqiao, Hunt, Diego, Meng, Kengyuan, Erickson, Tyler, Yang, Fengyuan, Barral, María Andrea, Ferrari, Valeria, & Smith, Arthur R. Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer. United States. https://doi.org/10.1103/PhysRevMaterials.4.064006
Ma, Yingqiao, Hunt, Diego, Meng, Kengyuan, Erickson, Tyler, Yang, Fengyuan, Barral, María Andrea, Ferrari, Valeria, and Smith, Arthur R. Mon . "Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer". United States. https://doi.org/10.1103/PhysRevMaterials.4.064006. https://www.osti.gov/servlets/purl/1635151.
@article{osti_1635151,
title = {Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer},
author = {Ma, Yingqiao and Hunt, Diego and Meng, Kengyuan and Erickson, Tyler and Yang, Fengyuan and Barral, María Andrea and Ferrari, Valeria and Smith, Arthur R.},
abstractNote = {Local strain-dependent spin-polarized electronic structure of a two-dimensional (2D) magnetic layer is an exciting property for practical applications. For example, it holds the promise for advanced ultrathin spintronic nanodevices with customized electronic and magnetic properties by local strain engineering. Here, we demonstrate that the spin-polarized electronic structure of a 2D manganese gallium nitride (MnGaN-2D) magnetic monolayer is sensitive to intrinsic local lattice strain, as proven by first-principles calculations and indicated by scanning tunneling spectroscopy measurements. Atomic resolution images reveal a highly non-Gaussian lattice spacing/strain distribution, while the spectroscopy reveals variations in the electronic density of states. Simulations of the MnGaN-2D monolayer based on first-principles calculations, including both isotropic and anisotropic strains, confirm a highly strain-dependent manganese partial density of states. Spin-orbit coupling is included which indicates either out-of-plane perpendicular magnetic anisotropy (PMA) or in-plane magnetic anisotropy, dependent on the type of strain whether compressive or tensile, suggesting that MnGaN-2D is magnetoelastic. The MnGaN-2D PMA is further supported by superconducting quantum interference device magnetometry measurements which reveal a high spin polarization of ~79% at room temperature.},
doi = {10.1103/PhysRevMaterials.4.064006},
journal = {Physical Review Materials},
number = 6,
volume = 4,
place = {United States},
year = {2020},
month = {6}
}

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Works referenced in this record:

A Two-Dimensional Manganese Gallium Nitride Surface Structure Showing Ferromagnetism at Room Temperature
journal, December 2017


Crafting the magnonic and spintronic response of BiFeO3 films by epitaxial strain
journal, April 2013

  • Sando, D.; Agbelele, A.; Rahmedov, D.
  • Nature Materials, Vol. 12, Issue 7
  • DOI: 10.1038/nmat3629

Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus
journal, April 2014


Local Strain Engineering in Atomically Thin MoS 2
journal, October 2013

  • Castellanos-Gomez, Andres; Roldán, Rafael; Cappelluti, Emmanuele
  • Nano Letters, Vol. 13, Issue 11
  • DOI: 10.1021/nl402875m

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
journal, July 2008


Stretching and Breaking of Ultrathin MoS 2
journal, November 2011

  • Bertolazzi, Simone; Brivio, Jacopo; Kis, Andras
  • ACS Nano, Vol. 5, Issue 12
  • DOI: 10.1021/nn203879f

Strain-Induced Pseudo-Magnetic Fields Greater Than 300 Tesla in Graphene Nanobubbles
journal, July 2010


Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering
journal, September 2009

  • Guinea, F.; Katsnelson, M. I.; Geim, A. K.
  • Nature Physics, Vol. 6, Issue 1
  • DOI: 10.1038/nphys1420

Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices
journal, November 1988


Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange
journal, March 1989


Giant magnetic tunneling effect in Fe/Al2O3/Fe junction
journal, January 1995


Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
journal, April 1995


Collision properties of one-dimensional granular particles with internal degrees of freedom
journal, November 1996


Current-driven excitation of magnetic multilayers
journal, June 1996


Spintronics: A Spin-Based Electronics Vision for the Future
journal, November 2001

  • Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A.
  • Science, Vol. 294, Issue 5546, p. 1488-1495
  • DOI: 10.1126/science.1065389

Spintronics: Fundamentals and applications
journal, April 2004


Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS 2 systems
journal, March 2013


Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals
journal, April 2017


Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit
journal, June 2017

  • Huang, Bevin; Clark, Genevieve; Navarro-Moratalla, Efrén
  • Nature, Vol. 546, Issue 7657
  • DOI: 10.1038/nature22391

Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
journal, April 2018


Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates
journal, February 2018


Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy
journal, November 1986


Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors
journal, August 1994


Ground State of the Electron Gas by a Stochastic Method
journal, August 1980


Self-interaction correction to density-functional approximations for many-electron systems
journal, May 1981


Efficient pseudopotentials for plane-wave calculations
journal, January 1991


Efficacious Form for Model Pseudopotentials
journal, May 1982


Nonlinear ionic pseudopotentials in spin-density-functional calculations
journal, August 1982


The SIESTA method for ab initio order- N materials simulation
journal, March 2002

  • Soler, José M.; Artacho, Emilio; Gale, Julian D.
  • Journal of Physics: Condensed Matter, Vol. 14, Issue 11
  • DOI: 10.1088/0953-8984/14/11/302

Scanning Tunneling Microscopy and Surface Simulation of Zinc-Blende GaN(001) Intrinsic 4 × Reconstruction: Linear Gallium Tetramers?
journal, September 2005


Density functionals and half-metallicity in La 2/3 Sr 1/3 MnO 3
journal, May 2006

  • Ferrari, V.; Pruneda, J. M.; Artacho, Emilio
  • physica status solidi (a), Vol. 203, Issue 6
  • DOI: 10.1002/pssa.200566183

Spin-orbit coupling with ultrasoft pseudopotentials: Application to Au and Pt
journal, March 2005


QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009

  • Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
  • Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
  • DOI: 10.1088/0953-8984/21/39/395502

Theory and Application for the Scanning Tunneling Microscope
journal, June 1983