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Title: Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer

Abstract

Local strain-dependent spin-polarized electronic structure of a two-dimensional (2D) magnetic layer is an exciting property for practical applications. For example, it holds the promise for advanced ultrathin spintronic nanodevices with customized electronic and magnetic properties by local strain engineering. Here, we demonstrate that the spin-polarized electronic structure of a 2D manganese gallium nitride (MnGaN-2D) magnetic monolayer is sensitive to intrinsic local lattice strain, as proven by first-principles calculations and indicated by scanning tunneling spectroscopy measurements. Atomic resolution images reveal a highly non-Gaussian lattice spacing/strain distribution, while the spectroscopy reveals variations in the electronic density of states. Simulations of the MnGaN-2D monolayer based on first-principles calculations, including both isotropic and anisotropic strains, confirm a highly strain-dependent manganese partial density of states. Spin-orbit coupling is included which indicates either out-of-plane perpendicular magnetic anisotropy (PMA) or in-plane magnetic anisotropy, dependent on the type of strain whether compressive or tensile, suggesting that MnGaN-2D is magnetoelastic. The MnGaN-2D PMA is further supported by superconducting quantum interference device magnetometry measurements which reveal a high spin polarization of ~ 79 % at room temperature.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3]; ORCiD logo [1]; ORCiD logo [3]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [1]
  1. Ohio Univ., Athens, OH (United States)
  2. Comisión Nacional de Energía Atómica (CNEA), Buenos Aires (Argentina); Inst. de Nanociencia y Nanotecnología INN (CNEA-CONICET), Buenos Aires (Argentina)
  3. The Ohio State Univ., Columbus, OH (United States)
Publication Date:
Research Org.:
Ohio Univ., Athens, OH (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1635151
Grant/Contract Number:  
FG02-06ER46317; SC0001304
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 6; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; density of states; magnetic anisotropy; spintronics; surfaces; density functional theory; magnetization measurements; scanning tunneling spectroscopy

Citation Formats

Ma, Yingqiao, Hunt, Diego, Meng, Kengyuan, Erickson, Tyler, Yang, Fengyuan, Barral, María Andrea, Ferrari, Valeria, and Smith, Arthur R. Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer. United States: N. p., 2020. Web. doi:10.1103/PhysRevMaterials.4.064006.
Ma, Yingqiao, Hunt, Diego, Meng, Kengyuan, Erickson, Tyler, Yang, Fengyuan, Barral, María Andrea, Ferrari, Valeria, & Smith, Arthur R. Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer. United States. https://doi.org/10.1103/PhysRevMaterials.4.064006
Ma, Yingqiao, Hunt, Diego, Meng, Kengyuan, Erickson, Tyler, Yang, Fengyuan, Barral, María Andrea, Ferrari, Valeria, and Smith, Arthur R. Mon . "Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer". United States. https://doi.org/10.1103/PhysRevMaterials.4.064006. https://www.osti.gov/servlets/purl/1635151.
@article{osti_1635151,
title = {Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer},
author = {Ma, Yingqiao and Hunt, Diego and Meng, Kengyuan and Erickson, Tyler and Yang, Fengyuan and Barral, María Andrea and Ferrari, Valeria and Smith, Arthur R.},
abstractNote = {Local strain-dependent spin-polarized electronic structure of a two-dimensional (2D) magnetic layer is an exciting property for practical applications. For example, it holds the promise for advanced ultrathin spintronic nanodevices with customized electronic and magnetic properties by local strain engineering. Here, we demonstrate that the spin-polarized electronic structure of a 2D manganese gallium nitride (MnGaN-2D) magnetic monolayer is sensitive to intrinsic local lattice strain, as proven by first-principles calculations and indicated by scanning tunneling spectroscopy measurements. Atomic resolution images reveal a highly non-Gaussian lattice spacing/strain distribution, while the spectroscopy reveals variations in the electronic density of states. Simulations of the MnGaN-2D monolayer based on first-principles calculations, including both isotropic and anisotropic strains, confirm a highly strain-dependent manganese partial density of states. Spin-orbit coupling is included which indicates either out-of-plane perpendicular magnetic anisotropy (PMA) or in-plane magnetic anisotropy, dependent on the type of strain whether compressive or tensile, suggesting that MnGaN-2D is magnetoelastic. The MnGaN-2D PMA is further supported by superconducting quantum interference device magnetometry measurements which reveal a high spin polarization of ~79% at room temperature.},
doi = {10.1103/PhysRevMaterials.4.064006},
journal = {Physical Review Materials},
number = 6,
volume = 4,
place = {United States},
year = {2020},
month = {6}
}

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