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Title: Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material

Abstract

Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction on a substrate-removed metal-semiconductor-metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip-chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. Here, high-resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical-lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in-plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities; amplitudes of 4.7 ×103 cm2/V s and 1.60 cm2/V s are determined at 77 K, respectively. The temperature-dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap-induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering-limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [3];  [2]; ORCiD logo [4];  [1];  [5];  [3]; ORCiD logo [6]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Air Force Research Lab. (AFRL), Kirtland AFB, NM (United States). Space Vehicles Directorate
  3. Univ. of Western Australia, Crawley, WA (Australia). Dept. of Electrical, Electronic, and Computer Engineering
  4. Air Force Research Lab. (AFRL), Kirtland AFB, NM (United States). Space Vehicles Directorate; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Nuclear Science and Engineering
  5. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials (CHTM)
  6. The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO); Australian Research Council; Australian National Fabrication Facility (ANFF)
OSTI Identifier:
1634793
Alternate Identifier(s):
OSTI ID: 1617763
Report Number(s):
SAND-2020-4520J
Journal ID: ISSN 0003-6951; 685777
Grant/Contract Number:  
AC04-94AL85000; NA0003525; W911NF-16-2-0068; DP140103667; DP170104555
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 18; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; lattice scattering; phonon scattering; flip chip; electronic transport; hall effect; superlattices; hopping transport; semiconductors; transport properties; magnetic fields

Citation Formats

Casias, Lilian K., Morath, Christian P., Steenbergen, Elizabeth H., Umana-Membreno, Gilberto A., Webster, Preston T., Logan, Julie V., Kim, Jin K., Balakrishnan, Ganesh, Faraone, Lorenzo, and Krishna, Sanjay. Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material. United States: N. p., 2020. Web. https://doi.org/10.1063/1.5144079.
Casias, Lilian K., Morath, Christian P., Steenbergen, Elizabeth H., Umana-Membreno, Gilberto A., Webster, Preston T., Logan, Julie V., Kim, Jin K., Balakrishnan, Ganesh, Faraone, Lorenzo, & Krishna, Sanjay. Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material. United States. https://doi.org/10.1063/1.5144079
Casias, Lilian K., Morath, Christian P., Steenbergen, Elizabeth H., Umana-Membreno, Gilberto A., Webster, Preston T., Logan, Julie V., Kim, Jin K., Balakrishnan, Ganesh, Faraone, Lorenzo, and Krishna, Sanjay. Fri . "Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material". United States. https://doi.org/10.1063/1.5144079. https://www.osti.gov/servlets/purl/1634793.
@article{osti_1634793,
title = {Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material},
author = {Casias, Lilian K. and Morath, Christian P. and Steenbergen, Elizabeth H. and Umana-Membreno, Gilberto A. and Webster, Preston T. and Logan, Julie V. and Kim, Jin K. and Balakrishnan, Ganesh and Faraone, Lorenzo and Krishna, Sanjay},
abstractNote = {Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction on a substrate-removed metal-semiconductor-metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip-chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. Here, high-resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical-lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in-plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities; amplitudes of 4.7 ×103 cm2/V s and 1.60 cm2/V s are determined at 77 K, respectively. The temperature-dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap-induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering-limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.},
doi = {10.1063/1.5144079},
journal = {Applied Physics Letters},
number = 18,
volume = 116,
place = {United States},
year = {2020},
month = {5}
}

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