Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material
Abstract
Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction on a substrate-removed metal-semiconductor-metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip-chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. Here, high-resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical-lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in-plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities; amplitudes of 4.7 ×103 cm2/V s and 1.60 cm2/V s are determined at 77 K, respectively. The temperature-dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap-induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering-limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.
- Authors:
-
[1];
[2];
[2];
[3];
[4];
[6]
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Air Force Research Lab. (AFRL), Kirtland AFB, NM (United States). Space Vehicles Directorate
- Univ. of Western Australia, Crawley, WA (Australia). Dept. of Electrical, Electronic, and Computer Engineering
- Air Force Research Lab. (AFRL), Kirtland AFB, NM (United States). Space Vehicles Directorate; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Nuclear Science and Engineering
- Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials (CHTM)
- The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO); Australian Research Council; Australian National Fabrication Facility (ANFF)
- OSTI Identifier:
- 1634793
- Alternate Identifier(s):
- OSTI ID: 1617763
- Report Number(s):
- SAND-2020-4520J
Journal ID: ISSN 0003-6951; 685777; TRN: US2201394
- Grant/Contract Number:
- AC04-94AL85000; NA0003525; W911NF-16-2-0068; DP140103667; DP170104555
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 116; Journal Issue: 18; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; lattice scattering; phonon scattering; flip chip; electronic transport; hall effect; superlattices; hopping transport; semiconductors; transport properties; magnetic fields
Citation Formats
Casias, Lilian K., Morath, Christian P., Steenbergen, Elizabeth H., Umana-Membreno, Gilberto A., Webster, Preston T., Logan, Julie V., Kim, Jin K., Balakrishnan, Ganesh, Faraone, Lorenzo, and Krishna, Sanjay. Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material. United States: N. p., 2020.
Web. doi:10.1063/1.5144079.
Casias, Lilian K., Morath, Christian P., Steenbergen, Elizabeth H., Umana-Membreno, Gilberto A., Webster, Preston T., Logan, Julie V., Kim, Jin K., Balakrishnan, Ganesh, Faraone, Lorenzo, & Krishna, Sanjay. Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material. United States. https://doi.org/10.1063/1.5144079
Casias, Lilian K., Morath, Christian P., Steenbergen, Elizabeth H., Umana-Membreno, Gilberto A., Webster, Preston T., Logan, Julie V., Kim, Jin K., Balakrishnan, Ganesh, Faraone, Lorenzo, and Krishna, Sanjay. Fri .
"Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material". United States. https://doi.org/10.1063/1.5144079. https://www.osti.gov/servlets/purl/1634793.
@article{osti_1634793,
title = {Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material},
author = {Casias, Lilian K. and Morath, Christian P. and Steenbergen, Elizabeth H. and Umana-Membreno, Gilberto A. and Webster, Preston T. and Logan, Julie V. and Kim, Jin K. and Balakrishnan, Ganesh and Faraone, Lorenzo and Krishna, Sanjay},
abstractNote = {Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction on a substrate-removed metal-semiconductor-metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip-chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. Here, high-resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical-lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in-plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities; amplitudes of 4.7 ×103 cm2/V s and 1.60 cm2/V s are determined at 77 K, respectively. The temperature-dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap-induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering-limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.},
doi = {10.1063/1.5144079},
journal = {Applied Physics Letters},
number = 18,
volume = 116,
place = {United States},
year = {2020},
month = {5}
}
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