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Title: Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic devices

Abstract

The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. Finally, the results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, which would contribute to future applications in high-capacity storage devices and advanced computing.

Authors:
 [1]; ORCiD logo [2];  [3]; ORCiD logo [1];  [4]; ORCiD logo [5];  [1]; ORCiD logo [6];  [1];  [1];  [1]; ORCiD logo [7]; ORCiD logo [8];  [1]; ORCiD logo [9]; ORCiD logo [5];  [1]; ORCiD logo [6]; ORCiD logo [3];  [6] more »; ORCiD logo [10] « less
  1. Nanyang Technological Univ. (Singapore)
  2. Tsinghua Univ., Beijing (China); Rutgers Univ., Piscataway, NJ (United States)
  3. Oregon State Univ., Corvallis, OR (United States)
  4. Uppsala Univ. (Sweden); SRM Univ. AP, Amaravati (India)
  5. National Univ. of Singapore (Singapore)
  6. Tsinghua Univ., Beijing (China)
  7. Queensland Univ. of Technology, Brisbane, QLD (Australia); La Trobe Univ., Melbourne, VIC (Australia)
  8. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  9. Uppsala Univ. (Sweden)
  10. Nanyang Technological Univ. (Singapore); Nanyang Technological Univ. (Singapore)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1634076
Grant/Contract Number:  
AC02-05CH11231; R-265-000-615-114; FT160100207; 51788104
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Reviews
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 1931-9401
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Huang, Ke, Wu, Liang, Wang, Maoyu, Swain, Nyayabanta, Motapothula, M., Luo, Yongzheng, Han, Kun, Chen, Mingfeng, Ye, Chen, Yang, Allen Jian, Xu, Huan, Qi, Dong-chen, N'Diaye, Alpha T., Panagopoulos, Christos, Primetzhofer, Daniel, Shen, Lei, Sengupta, Pinaki, Ma, Jing, Feng, Zhenxing, Nan, Ce-Wen, and Renshaw Wang, X. Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic devices. United States: N. p., 2020. Web. https://doi.org/10.1063/1.5124373.
Huang, Ke, Wu, Liang, Wang, Maoyu, Swain, Nyayabanta, Motapothula, M., Luo, Yongzheng, Han, Kun, Chen, Mingfeng, Ye, Chen, Yang, Allen Jian, Xu, Huan, Qi, Dong-chen, N'Diaye, Alpha T., Panagopoulos, Christos, Primetzhofer, Daniel, Shen, Lei, Sengupta, Pinaki, Ma, Jing, Feng, Zhenxing, Nan, Ce-Wen, & Renshaw Wang, X. Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic devices. United States. https://doi.org/10.1063/1.5124373
Huang, Ke, Wu, Liang, Wang, Maoyu, Swain, Nyayabanta, Motapothula, M., Luo, Yongzheng, Han, Kun, Chen, Mingfeng, Ye, Chen, Yang, Allen Jian, Xu, Huan, Qi, Dong-chen, N'Diaye, Alpha T., Panagopoulos, Christos, Primetzhofer, Daniel, Shen, Lei, Sengupta, Pinaki, Ma, Jing, Feng, Zhenxing, Nan, Ce-Wen, and Renshaw Wang, X. Fri . "Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic devices". United States. https://doi.org/10.1063/1.5124373. https://www.osti.gov/servlets/purl/1634076.
@article{osti_1634076,
title = {Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic devices},
author = {Huang, Ke and Wu, Liang and Wang, Maoyu and Swain, Nyayabanta and Motapothula, M. and Luo, Yongzheng and Han, Kun and Chen, Mingfeng and Ye, Chen and Yang, Allen Jian and Xu, Huan and Qi, Dong-chen and N'Diaye, Alpha T. and Panagopoulos, Christos and Primetzhofer, Daniel and Shen, Lei and Sengupta, Pinaki and Ma, Jing and Feng, Zhenxing and Nan, Ce-Wen and Renshaw Wang, X.},
abstractNote = {The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. Finally, the results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, which would contribute to future applications in high-capacity storage devices and advanced computing.},
doi = {10.1063/1.5124373},
journal = {Applied Physics Reviews},
number = 1,
volume = 7,
place = {United States},
year = {2020},
month = {1}
}

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