Correction to Metallic 1T Phase, 3d1 Electronic Configuration and Charge Density Wave Order in Molecular-Beam Epitaxy Grown Monolayer Vanadium Ditelluride

Journal Article · Fri Dec 20 00:00:00 UTC 2019 · ACS Nano

DOI: https://doi.org/10.1021/acsnano.9b09833 · OSTI ID:1634067

Wong, Ping Johnny  ^[1]; Zhang, Wen  ^[1]; Zhou, Jun  ^[1]; Bussolotti, Fabio ^[2]; Yin, Xinmao  ^[1]; Zhang, Lei  ^[1]; N’Diaye, Alpha T. ^[3]; Morton, Simon A. ^[3]; Chen, Wei ^[1]; Goh, Kuan Johnson  ^[4]; de Jong, Michel P.  ^[5]; Feng, Yuan Ping  ^[1]; Wee, Andrew S.  ^[1]

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1. National Univ. of Singapore (Singapore)
2. Agency for Science, Technology, and Research (A*Star), Innovis, (Singapore)
3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
4. National Univ. of Singapore (Singapore); Agency for Science, Technology, and Research (A*Star), Innovis, (Singapore)
5. Univ. of Twente, Enschede (Netherlands)

It has been brought to our attention that a mistake exists in the author list. The author “Johnson Goh” in the original article should be “Kuan Eng Johnson Goh”. His primary corresponding email is [e-mail].

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: AC02-05CH11231
• OSTI ID: 1634067
• Journal Information: ACS Nano, Journal Name: ACS Nano Journal Issue: 1 Vol. 14; ISSN 1936-0851
• Publisher: American Chemical Society (ACS)Copyright Statement
• Country of Publication: United States
• Language: English