Correction to Metallic 1T Phase, 3d1 Electronic Configuration and Charge Density Wave Order in Molecular-Beam Epitaxy Grown Monolayer Vanadium Ditelluride
Abstract
It has been brought to our attention that a mistake exists in the author list. The author “Johnson Goh” in the original article should be “Kuan Eng Johnson Goh”. His primary corresponding email is kejgoh@yahoo.com.
- Authors:
-
- National Univ. of Singapore (Singapore)
- Agency for Science, Technology, and Research (A*Star), Innovis, (Singapore)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- National Univ. of Singapore (Singapore); Agency for Science, Technology, and Research (A*Star), Innovis, (Singapore)
- Univ. of Twente, Enschede (Netherlands)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1634067
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Nano
- Additional Journal Information:
- Journal Volume: 14; Journal Issue: 1; Journal ID: ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 99 GENERAL AND MISCELLANEOUS; Two-dimensional materials; transition-metal dichalcogenides; vanadium ditelluride; molecular beam epitaxy; magnetism
Citation Formats
Wong, Ping Johnny, Zhang, Wen, Zhou, Jun, Bussolotti, Fabio, Yin, Xinmao, Zhang, Lei, N’Diaye, Alpha T., Morton, Simon A., Chen, Wei, Goh, Kuan Johnson, de Jong, Michel P., Feng, Yuan Ping, and Wee, Andrew S.. Correction to Metallic 1T Phase, 3d1 Electronic Configuration and Charge Density Wave Order in Molecular-Beam Epitaxy Grown Monolayer Vanadium Ditelluride. United States: N. p., 2019.
Web. doi:10.1021/acsnano.9b09833.
Wong, Ping Johnny, Zhang, Wen, Zhou, Jun, Bussolotti, Fabio, Yin, Xinmao, Zhang, Lei, N’Diaye, Alpha T., Morton, Simon A., Chen, Wei, Goh, Kuan Johnson, de Jong, Michel P., Feng, Yuan Ping, & Wee, Andrew S.. Correction to Metallic 1T Phase, 3d1 Electronic Configuration and Charge Density Wave Order in Molecular-Beam Epitaxy Grown Monolayer Vanadium Ditelluride. United States. https://doi.org/10.1021/acsnano.9b09833
Wong, Ping Johnny, Zhang, Wen, Zhou, Jun, Bussolotti, Fabio, Yin, Xinmao, Zhang, Lei, N’Diaye, Alpha T., Morton, Simon A., Chen, Wei, Goh, Kuan Johnson, de Jong, Michel P., Feng, Yuan Ping, and Wee, Andrew S.. Fri .
"Correction to Metallic 1T Phase, 3d1 Electronic Configuration and Charge Density Wave Order in Molecular-Beam Epitaxy Grown Monolayer Vanadium Ditelluride". United States. https://doi.org/10.1021/acsnano.9b09833. https://www.osti.gov/servlets/purl/1634067.
@article{osti_1634067,
title = {Correction to Metallic 1T Phase, 3d1 Electronic Configuration and Charge Density Wave Order in Molecular-Beam Epitaxy Grown Monolayer Vanadium Ditelluride},
author = {Wong, Ping Johnny and Zhang, Wen and Zhou, Jun and Bussolotti, Fabio and Yin, Xinmao and Zhang, Lei and N’Diaye, Alpha T. and Morton, Simon A. and Chen, Wei and Goh, Kuan Johnson and de Jong, Michel P. and Feng, Yuan Ping and Wee, Andrew S.},
abstractNote = {It has been brought to our attention that a mistake exists in the author list. The author “Johnson Goh” in the original article should be “Kuan Eng Johnson Goh”. His primary corresponding email is kejgoh@yahoo.com.},
doi = {10.1021/acsnano.9b09833},
journal = {ACS Nano},
number = 1,
volume = 14,
place = {United States},
year = {2019},
month = {12}
}
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