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Title: Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

Abstract

The effect of intrinsic point defects on relaxor properties of 0.68 $$\mathrm{PbMg_{1/3}Nb_{2/3}O_{3}-0.32 PbTiO_{3}}$$ thin films is studied across nearly 2 orders of magnitude of defect concentration via ex post facto ion bombardment. A weakening of the relaxor character is observed with increasing concentration of bombardment-induced point defects, which is hypothesized to be related to strong interactions between defect dipoles and the polarization. Finally, although more defects and structural disorder are introduced in the system as a result of ion bombardment, the special type of defects that are likely to form in these polar materials (i.e., defect dipoles) can stabilize the direction of polarization against thermal fluctuations, and in turn, weaken relaxor behavior.

Authors:
ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [2]
  1. Univ. of California, Berkeley, CA (United States)
  2. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); US Army Research Office (ARO); Gordon and Betty Moore Foundation
OSTI Identifier:
1634055
Grant/Contract Number:  
AC02-05CH11231; SC0012375; DMR-1708615; W911NF-14-1-0104; GBMF5307
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 123; Journal Issue: 20; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; defects; dielectric properties; irradiation effects; heterostructures; relaxor ferroelectrics; thin films; x-ray diffraction

Citation Formats

Saremi, Sahar, Kim, Jieun, Ghosh, Anirban, Meyers, Derek, and Martin, Lane W. Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films. United States: N. p., 2019. Web. https://doi.org/10.1103/physrevlett.123.207602.
Saremi, Sahar, Kim, Jieun, Ghosh, Anirban, Meyers, Derek, & Martin, Lane W. Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films. United States. https://doi.org/10.1103/physrevlett.123.207602
Saremi, Sahar, Kim, Jieun, Ghosh, Anirban, Meyers, Derek, and Martin, Lane W. Fri . "Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films". United States. https://doi.org/10.1103/physrevlett.123.207602. https://www.osti.gov/servlets/purl/1634055.
@article{osti_1634055,
title = {Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films},
author = {Saremi, Sahar and Kim, Jieun and Ghosh, Anirban and Meyers, Derek and Martin, Lane W.},
abstractNote = {The effect of intrinsic point defects on relaxor properties of 0.68 $\mathrm{PbMg_{1/3}Nb_{2/3}O_{3}-0.32 PbTiO_{3}}$ thin films is studied across nearly 2 orders of magnitude of defect concentration via ex post facto ion bombardment. A weakening of the relaxor character is observed with increasing concentration of bombardment-induced point defects, which is hypothesized to be related to strong interactions between defect dipoles and the polarization. Finally, although more defects and structural disorder are introduced in the system as a result of ion bombardment, the special type of defects that are likely to form in these polar materials (i.e., defect dipoles) can stabilize the direction of polarization against thermal fluctuations, and in turn, weaken relaxor behavior.},
doi = {10.1103/physrevlett.123.207602},
journal = {Physical Review Letters},
number = 20,
volume = 123,
place = {United States},
year = {2019},
month = {11}
}

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