Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

Saremi, Sahar; Kim, Jieun; Ghosh, Anirban; Meyers, Derek; Martin, Lane W.

doi:10.1103/physrevlett.123.207602

Title: Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

Journal Article · 15 November 2019 · Physical Review Letters

DOI: https://doi.org/10.1103/physrevlett.123.207602 · OSTI ID:1634055

^[1]; Kim, Jieun ^[1]; Ghosh, Anirban ^[1]; Meyers, Derek ^[1];

^[2]

Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

The effect of intrinsic point defects on relaxor properties of 0.68 $$\mathrm{PbMg_{1/3}Nb_{2/3}O_{3}-0.32 PbTiO_{3}}$$ thin films is studied across nearly 2 orders of magnitude of defect concentration via ex post facto ion bombardment. A weakening of the relaxor character is observed with increasing concentration of bombardment-induced point defects, which is hypothesized to be related to strong interactions between defect dipoles and the polarization. Finally, although more defects and structural disorder are introduced in the system as a result of ion bombardment, the special type of defects that are likely to form in these polar materials (i.e., defect dipoles) can stabilize the direction of polarization against thermal fluctuations, and in turn, weaken relaxor behavior.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); US Army Research Office (ARO); Gordon and Betty Moore Foundation

Grant/Contract Number:: AC02-05CH11231; SC0012375; DMR-1708615; W911NF-14-1-0104; GBMF5307

OSTI ID:: 1634055

Journal Information:: Physical Review Letters, Vol. 123, Issue 20; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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Title: Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

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