Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

Saremi, Sahar; Kim, Jieun; Ghosh, Anirban; Meyers, Derek; Martin, Lane W.

doi:10.1103/physrevlett.123.207602

Title: Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

Abstract

The effect of intrinsic point defects on relaxor properties of 0.68 $$\mathrm{PbMg_{1/3}Nb_{2/3}O_{3}-0.32 PbTiO_{3}}$$ thin films is studied across nearly 2 orders of magnitude of defect concentration via ex post facto ion bombardment. A weakening of the relaxor character is observed with increasing concentration of bombardment-induced point defects, which is hypothesized to be related to strong interactions between defect dipoles and the polarization. Finally, although more defects and structural disorder are introduced in the system as a result of ion bombardment, the special type of defects that are likely to form in these polar materials (i.e., defect dipoles) can stabilize the direction of polarization against thermal fluctuations, and in turn, weaken relaxor behavior.

Authors:

^[1]; Kim, Jieun ^[1]; Ghosh, Anirban ^[1]; Meyers, Derek ^[1];

^[2]

Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Publication Date:: 2019-11-15

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); US Army Research Office (ARO); Gordon and Betty Moore Foundation

OSTI Identifier:: 1634055

Grant/Contract Number:: AC02-05CH11231; SC0012375; DMR-1708615; W911NF-14-1-0104; GBMF5307

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 123; Journal Issue: 20; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; defects; dielectric properties; irradiation effects; heterostructures; relaxor ferroelectrics; thin films; x-ray diffraction

Citation Formats


                    Saremi, Sahar, Kim, Jieun, Ghosh, Anirban, Meyers, Derek, and Martin, Lane W. Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films.  United States: N. p., 2019. 
Web.  doi:10.1103/physrevlett.123.207602.

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                    Saremi, Sahar, Kim, Jieun, Ghosh, Anirban, Meyers, Derek, & Martin, Lane W. Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films.  United States.  https://doi.org/10.1103/physrevlett.123.207602

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                    Saremi, Sahar, Kim, Jieun, Ghosh, Anirban, Meyers, Derek, and Martin, Lane W. Fri .  
"Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films".  United States.  https://doi.org/10.1103/physrevlett.123.207602.  https://www.osti.gov/servlets/purl/1634055.

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@article{osti_1634055,

  title        = {Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films},

  author       = {Saremi, Sahar and Kim, Jieun and Ghosh, Anirban and Meyers, Derek and Martin, Lane W.},

  abstractNote = {The effect of intrinsic point defects on relaxor properties of 0.68 $\mathrm{PbMg_{1/3}Nb_{2/3}O_{3}-0.32 PbTiO_{3}}$ thin films is studied across nearly 2 orders of magnitude of defect concentration via ex post facto ion bombardment. A weakening of the relaxor character is observed with increasing concentration of bombardment-induced point defects, which is hypothesized to be related to strong interactions between defect dipoles and the polarization. Finally, although more defects and structural disorder are introduced in the system as a result of ion bombardment, the special type of defects that are likely to form in these polar materials (i.e., defect dipoles) can stabilize the direction of polarization against thermal fluctuations, and in turn, weaken relaxor behavior.},

  doi          = {10.1103/physrevlett.123.207602},

  journal      = {Physical Review Letters},

  number       = 20,

  volume       = 123,

  place        = {United States},

  year         = {2019},

  month        = {11}

}

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Title: Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

Abstract

Citation Formats

Reorientation of (MnTi″−VO••)× defect dipoles in acceptor-modified BaTiO3 single crystals: An electron paramagnetic resonance study journal, November 2008

Recent progress in relaxor ferroelectrics with perovskite structure journal, January 2006

Order and disorder in the relaxor ferroelectric perovskite (PSN): comparison with simple perovskites and journal, September 1997

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Defect ordering and defect–domain-wall interactions in PbTiO 3 : A first-principles study journal, December 2013

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Freezing of the polarization fluctuations in lead magnesium niobate relaxors
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journal, September 1956

Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals
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Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)–PbTiO3(10%) relaxor thin films
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The relaxational properties of compositionally disordered ABO ₃ perovskites
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journal, September 1989

Defect‐dipole alignment and tetragonal strain in ferroelectrics
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On the Temperature Dependence of Cooperative Relaxation Properties in Glass‐Forming Liquids
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journal, March 2017

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