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Title: Low-loss superconducting titanium nitride grown using plasma-assisted molecular beam epitaxy

Abstract

Titanium nitride (TiN) is a known superconducting material that is attractive for use as passive components in superconducting circuits for both conventional and quantum information devices. In contrast to conventional synthesis techniques, here, plasma-assisted molecular beam epitaxy is reported to produce high-quality TiN on bare silicon wafers. Using a rf-plasma source to crack the nitrogen molecules and a conventional high-temperature effusion cell for titanium, TiN growth is completed under nitrogen-rich conditions. The growth and nucleation is monitored in situ, while the structure and composition are characterized using x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and scanning transmission electron microscopy. The stoichiometric TiN (111) films sit on an amorphous nitride layer with low impurity concentrations. The films superconduct with Tc=5.4 K, and coplanar waveguide resonators are fabricated with a small center width of 6 μm that demonstrate single-photon quality factors approaching 1M and high-power quality factors over 5M without observing saturation.

Authors:
ORCiD logo; ORCiD logo; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1633827
Grant/Contract Number:  
AC0576RL01830.
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 127 Journal Issue: 23; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Richardson, C. J. K., Alexander, A., Weddle, C. G., Arey, B., and Olszta, M. Low-loss superconducting titanium nitride grown using plasma-assisted molecular beam epitaxy. United States: N. p., 2020. Web. doi:10.1063/5.0008010.
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Richardson, C. J. K., Alexander, A., Weddle, C. G., Arey, B., & Olszta, M. Low-loss superconducting titanium nitride grown using plasma-assisted molecular beam epitaxy. United States. https://doi.org/10.1063/5.0008010
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Richardson, C. J. K., Alexander, A., Weddle, C. G., Arey, B., and Olszta, M. Thu . "Low-loss superconducting titanium nitride grown using plasma-assisted molecular beam epitaxy". United States. https://doi.org/10.1063/5.0008010.
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@article{osti_1633827,
title = {Low-loss superconducting titanium nitride grown using plasma-assisted molecular beam epitaxy},
author = {Richardson, C. J. K. and Alexander, A. and Weddle, C. G. and Arey, B. and Olszta, M.},
abstractNote = {Titanium nitride (TiN) is a known superconducting material that is attractive for use as passive components in superconducting circuits for both conventional and quantum information devices. In contrast to conventional synthesis techniques, here, plasma-assisted molecular beam epitaxy is reported to produce high-quality TiN on bare silicon wafers. Using a rf-plasma source to crack the nitrogen molecules and a conventional high-temperature effusion cell for titanium, TiN growth is completed under nitrogen-rich conditions. The growth and nucleation is monitored in situ, while the structure and composition are characterized using x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and scanning transmission electron microscopy. The stoichiometric TiN (111) films sit on an amorphous nitride layer with low impurity concentrations. The films superconduct with Tc=5.4 K, and coplanar waveguide resonators are fabricated with a small center width of 6 μm that demonstrate single-photon quality factors approaching 1M and high-power quality factors over 5M without observing saturation.},
doi = {10.1063/5.0008010},
journal = {Journal of Applied Physics},
number = 23,
volume = 127,
place = {United States},
year = {Thu Jun 18 00:00:00 EDT 2020},
month = {Thu Jun 18 00:00:00 EDT 2020}
}
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https://doi.org/10.1063/5.0008010
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