Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

Kwon, Jiseok; Delker, Collin J.; Janes, David B.; Harris, Charles T.; Das, Suprem R.

doi:10.1002/pssa.201900880

Title: Molybdenum Contacts to MoS ₂ Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

Abstract

MoS ₂ has great interest for nanoscale electronic devices, including transistors and sensors. Defect‐free structure, clean interface with the gate dielectric, and metals with suitable metal–semiconductor junctions are key for reliable devices. Molybdenum is shown as an excellent electrode for MoS ₂ field‐effect transistors (FETs), but the correlation among device current, field‐effect mobility, and the low‐frequency noise (LFN) with number of atomic layers is not studied. Furthermore, the impact of Mo/MoS ₂ Schottky barrier on electronic injection and scattering in the device needs to be understood. Herein, by studying the FETs with channels of different numbers of atomic‐layer thicknesses, it is shown that a molybdenum metal contact to MoS ₂ provides reliable current injection with low Schottky barrier height, low contact resistance, low electron–phonon scattering, and negligible impurity scattering. The mobility and LFN are optimal at a channel thickness of ≈12 atomic layers, which is consistent with the “mobility maximum window” in MoS ₂ transistors with prior studies using other contact metals.

Authors:

Kwon, Jiseok ^[1]; Delker, Collin J. ^[2]; Janes, David B. ^[1]; Harris, Charles T. ^[2];

^[3]

School of Electrical and Computer Engineering Birck Nanotechnology Center Purdue University 1205 W State St. West Lafayette IN 47907 USA
Center for Integrated Nanotechnologies Sandia National Laboratories Albuquerque NM 87185 USA
Department of Industrial and Manufacturing Systems Engineering Department of Electrical and Computer Engineering Kansas State University Manhattan KS 66506 USA

Publication Date:: Wed Jun 17 00:00:00 EDT 2020

Sponsoring Org.:: USDOE

OSTI Identifier:: 1633688

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physica Status Solidi. A, Applications and Materials Science

Additional Journal Information:: Journal Name: Physica Status Solidi. A, Applications and Materials Science Journal Volume: 217 Journal Issue: 17; Journal ID: ISSN 1862-6300

Publisher:: Wiley Blackwell (John Wiley & Sons)

Country of Publication:: Germany

Language:: English

Citation Formats


                    Kwon, Jiseok, Delker, Collin J., Janes, David B., Harris, Charles T., and Das, Suprem R. Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise.  Germany: N. p., 2020. 
Web.  doi:10.1002/pssa.201900880.

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                    Kwon, Jiseok, Delker, Collin J., Janes, David B., Harris, Charles T., & Das, Suprem R. Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise.  Germany.  https://doi.org/10.1002/pssa.201900880

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                    Kwon, Jiseok, Delker, Collin J., Janes, David B., Harris, Charles T., and Das, Suprem R. Wed .  
"Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise".  Germany.  https://doi.org/10.1002/pssa.201900880.

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@article{osti_1633688,

  title        = {Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise},

  author       = {Kwon, Jiseok and Delker, Collin J. and Janes, David B. and Harris, Charles T. and Das, Suprem R.},

  abstractNote = {MoS 2 has great interest for nanoscale electronic devices, including transistors and sensors. Defect‐free structure, clean interface with the gate dielectric, and metals with suitable metal–semiconductor junctions are key for reliable devices. Molybdenum is shown as an excellent electrode for MoS 2 field‐effect transistors (FETs), but the correlation among device current, field‐effect mobility, and the low‐frequency noise (LFN) with number of atomic layers is not studied. Furthermore, the impact of Mo/MoS 2 Schottky barrier on electronic injection and scattering in the device needs to be understood. Herein, by studying the FETs with channels of different numbers of atomic‐layer thicknesses, it is shown that a molybdenum metal contact to MoS 2 provides reliable current injection with low Schottky barrier height, low contact resistance, low electron–phonon scattering, and negligible impurity scattering. The mobility and LFN are optimal at a channel thickness of ≈12 atomic layers, which is consistent with the “mobility maximum window” in MoS 2 transistors with prior studies using other contact metals.},

  doi          = {10.1002/pssa.201900880},

  journal      = {Physica Status Solidi. A, Applications and Materials Science},

  number       = 17,

  volume       = 217,

  place        = {Germany},

  year         = {Wed Jun 17 00:00:00 EDT 2020},

  month        = {Wed Jun 17 00:00:00 EDT 2020}

}

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Title: Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

Abstract

Citation Formats

Hysteresis in Single-Layer MoS 2 Field Effect Transistors journal, May 2012

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS 2 Layers journal, November 2014

The intrinsic origin of hysteresis in MoS 2 field effect transistors journal, January 2016

Large Work Function Modulation of Monolayer MoS 2 by Ambient Gases journal, May 2016

Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS 2 Transistors with Reduction of Metal-Induced Gap States journal, May 2018

Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes journal, November 2015

Thickness-dependent charge transport in few-layer MoS 2 field-effect transistors journal, March 2016

Asymmetric Schottky Contacts in Bilayer MoS 2 Field Effect Transistors journal, May 2018

High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts journal, December 2013

Transitions between channel and contact regimes of low-frequency noise in many-layer MoS 2 field effect transistors journal, March 2019

Surface Defects on Natural MoS 2 journal, May 2015

Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors journal, July 2016

Mobility of Charge Carriers in Semiconducting Layer Structures journal, November 1967

High-performance MoS 2 transistors with low-resistance molybdenum contacts journal, March 2014

Electrical contacts to two-dimensional semiconductors journal, November 2015

Comparative Study on Electronic Structures of Sc and Ti Contacts with Monolayer and Multilayer MoS 2 journal, March 2015

Abnormal electrical characteristics of multi-layered MoS 2 FETs attributed to bulk traps journal, February 2016

Field-Effect Transistors Built from All Two-Dimensional Material Components journal, May 2014

High-Detectivity Multilayer MoS 2 Phototransistors with Spectral Response from Ultraviolet to Infrared journal, August 2012

Mobility engineering and a metal–insulator transition in monolayer MoS2 journal, June 2013

Atomically Thin MoS2 A New Direct-Gap Semiconductor journal, September 2010

Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact journal, February 2000

Single-Layer MoS2 Phototransistors journal, December 2011

Characterization of metal contacts for two-dimensional MoS 2 nanoflakes journal, December 2013

Correlating Electronic Transport and 1/ f Noise in Mo Se 2 Field-Effect Transistors journal, December 2018

Influence of Metal–MoS 2 Interface on MoS 2 Transistor Performance: Comparison of Ag and Ti Contacts journal, January 2015

Charge trapping at the MoS 2 -SiO 2 interface and its effects on the characteristics of MoS 2 metal-oxide-semiconductor field effect transistors journal, March 2015

Intrinsic Optoelectronic Characteristics of MoS 2 Phototransistors via a Fully Transparent van der Waals Heterostructure journal, July 2019

Single-layer MoS2 transistors journal, January 2011

High Performance Multilayer MoS2Transistors with Scandium Contacts journal, December 2012

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Title: Molybdenum Contacts to MoS ₂ Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

Hysteresis in Single-Layer MoS ₂ Field Effect Transistors
journal, May 2012

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS ₂ Layers
journal, November 2014

The intrinsic origin of hysteresis in MoS ₂ field effect transistors
journal, January 2016

Large Work Function Modulation of Monolayer MoS ₂ by Ambient Gases
journal, May 2016

Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS ₂ Transistors with Reduction of Metal-Induced Gap States
journal, May 2018

Electrical Contact Analysis of Multilayer MoS₂ Transistor With Molybdenum Source/Drain Electrodes
journal, November 2015

Thickness-dependent charge transport in few-layer MoS ₂ field-effect transistors
journal, March 2016

Asymmetric Schottky Contacts in Bilayer MoS ₂ Field Effect Transistors
journal, May 2018

High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts
journal, December 2013

Transitions between channel and contact regimes of low-frequency noise in many-layer MoS ₂ field effect transistors
journal, March 2019

Surface Defects on Natural MoS ₂
journal, May 2015

Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors
journal, July 2016

Mobility of Charge Carriers in Semiconducting Layer Structures
journal, November 1967

High-performance MoS 2 transistors with low-resistance molybdenum contacts
journal, March 2014

Electrical contacts to two-dimensional semiconductors
journal, November 2015

Comparative Study on Electronic Structures of Sc and Ti Contacts with Monolayer and Multilayer MoS ₂
journal, March 2015

Abnormal electrical characteristics of multi-layered MoS ₂ FETs attributed to bulk traps
journal, February 2016

Field-Effect Transistors Built from All Two-Dimensional Material Components
journal, May 2014

High-Detectivity Multilayer MoS ₂ Phototransistors with Spectral Response from Ultraviolet to Infrared
journal, August 2012

Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact
journal, February 2000

Single-Layer MoS₂ Phototransistors
journal, December 2011

Characterization of metal contacts for two-dimensional MoS ₂ nanoflakes
journal, December 2013

Correlating Electronic Transport and 1/ f Noise in ${Mo Se}_{2}$ Field-Effect Transistors
journal, December 2018

Influence of Metal–MoS ₂ Interface on MoS ₂ Transistor Performance: Comparison of Ag and Ti Contacts
journal, January 2015

Charge trapping at the MoS ₂ -SiO ₂ interface and its effects on the characteristics of MoS ₂ metal-oxide-semiconductor field effect transistors
journal, March 2015

Intrinsic Optoelectronic Characteristics of MoS ₂ Phototransistors via a Fully Transparent van der Waals Heterostructure
journal, July 2019

Single-layer MoS₂ transistors
journal, January 2011

High Performance Multilayer MoS₂Transistors with Scandium Contacts
journal, December 2012

Thickness-dependent Schottky barrier height of MoS ₂ field-effect transistors
journal, January 2017

Valley polarization in MoS2 monolayers by optical pumping
journal, June 2012

Contact-induced doping in aluminum-contacted molybdenum disulfide
journal, December 2017

Electrical behavior of the Au/MoS2 interface studied by light emission induced by scanning tunneling microscopy
journal, January 2006