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Title: Large Polarization and Susceptibilities in Artificial Morphotropic Phase Boundary PbZr1–x Tix O3 Superlattices

Journal Article · · Advanced Electronic Materials
ORCiD logo [1];  [1];  [2];  [3];  [1];  [1];  [1];  [2]; ORCiD logo [2]
  1. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
  2. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

The ability to produce atomically precise, artificial oxide heterostructures allows for the possibility of producing exotic phases and enhanced susceptibilities not found in parent materials. Typical ferroelectric materials either exhibit large saturation polarization away from a phase boundary or large dielectric susceptibility near a phase boundary. Both large ferroelectric polarization and dielectric permittivity are attained wherein fully epitaxial (PbZr0.8Ti0.2O3)n /(PbZr0.4Ti0.6O3)2n (n = 2, 4, 6, 8, 16 unit cells) superlattices are produced such that the overall film chemistry is at the morphotropic phase boundary, but constitutive layers are not. Here, long- (n ≥ 6) and short-period (n = 2) superlattices reveal large ferroelectric saturation polarization (P s = 64 µC cm–2) and small dielectric permittivity (εr ≈ 400 at 10 kHz). Intermediate-period (n = 4) superlattices, however, exhibit both large ferroelectric saturation polarization (P s = 64 µC cm–2) and dielectric permittivity (εr = 776 at 10 kHz). First-order reversal curve analysis reveals the presence of switching distributions for each parent layer and a third, interfacial layer wherein superlattice periodicity modulates the volume fraction of each switching distribution and thus the overall material response. This reveals that deterministic creation of artificial superlattices is an effective pathway for designing materials with enhanced responses to applied bias.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
Gordon and Betty Moore Foundation; National Science Foundation (NSF); US Army Research Laboratory (USARL); US Army Research Office (ARO); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
AC02-05CH11231; SC0012375
OSTI ID:
1633264
Journal Information:
Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 3 Vol. 6; ISSN 2199-160X
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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