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Title: Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [2]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
  2. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA, Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1632025
Grant/Contract Number:  
AR0001036
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 127 Journal Issue: 21; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Yuxuan, Chen, Zhaoying, Li, Wenbo, Lee, Hyunsoo, Karim, Md Rezaul, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth, and Zhao, Hongping. Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices. United States: N. p., 2020. Web. doi:10.1063/5.0008758.
Zhang, Yuxuan, Chen, Zhaoying, Li, Wenbo, Lee, Hyunsoo, Karim, Md Rezaul, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth, & Zhao, Hongping. Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices. United States. doi:https://doi.org/10.1063/5.0008758
Zhang, Yuxuan, Chen, Zhaoying, Li, Wenbo, Lee, Hyunsoo, Karim, Md Rezaul, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth, and Zhao, Hongping. Sun . "Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices". United States. doi:https://doi.org/10.1063/5.0008758.
@article{osti_1632025,
title = {Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices},
author = {Zhang, Yuxuan and Chen, Zhaoying and Li, Wenbo and Lee, Hyunsoo and Karim, Md Rezaul and Arehart, Aaron R. and Ringel, Steven A. and Rajan, Siddharth and Zhao, Hongping},
abstractNote = {},
doi = {10.1063/5.0008758},
journal = {Journal of Applied Physics},
number = 21,
volume = 127,
place = {United States},
year = {2020},
month = {6}
}

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