Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Miao, Jinshui; Liu, Xiwen; Jo, Kiyoung; He, Kang; Saxena, Ravindra; Song, Baokun; Zhang, Huiqin; He, Jiale; Han, Myung-Geun; Hu, Weida; Jariwala, Deep

doi:10.1021/acs.nanolett.0c00741

Title: Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Journal Article · 20 March 2020 · Nano Letters

DOI: https://doi.org/10.1021/acs.nanolett.0c00741 · OSTI ID:1631937

Miao, Jinshui ^[1]; Liu, Xiwen ^[1]; Jo, Kiyoung ^[1]; He, Kang ^[1]; Saxena, Ravindra ^[1]; Song, Baokun ^[1]; Zhang, Huiqin ^[1]; He, Jiale ^[2];

^[3];

^[2];

^[1]

Univ. of Pennsylvania, Philadelphia, PA (United States)
Chinese Academy of Sciences (CAS), Shanghai (China)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of “all-2D” vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1631937

Report Number(s):: BNL-215983-2020-JAAM; TRN: US2201038

Journal Information:: Nano Letters, Vol. 20, Issue 4; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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