skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

This content will become publicly available on March 20, 2021

Title: Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Abstract

Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of “all-2D” vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2]; ORCiD logo [3]; ORCiD logo [2]; ORCiD logo [1]
  1. Univ. of Pennsylvania, Philadelphia, PA (United States)
  2. Chinese Academy of Sciences (CAS), Shanghai (China)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1631937
Report Number(s):
BNL-215983-2020-JAAM
Journal ID: ISSN 1530-6984
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 20; Journal Issue: 4; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Miao, Jinshui, Liu, Xiwen, Jo, Kiyoung, He, Kang, Saxena, Ravindra, Song, Baokun, Zhang, Huiqin, He, Jiale, Han, Myung-Geun, Hu, Weida, and Jariwala, Deep. Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces. United States: N. p., 2020. Web. doi:10.1021/acs.nanolett.0c00741.
Miao, Jinshui, Liu, Xiwen, Jo, Kiyoung, He, Kang, Saxena, Ravindra, Song, Baokun, Zhang, Huiqin, He, Jiale, Han, Myung-Geun, Hu, Weida, & Jariwala, Deep. Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces. United States. doi:10.1021/acs.nanolett.0c00741.
Miao, Jinshui, Liu, Xiwen, Jo, Kiyoung, He, Kang, Saxena, Ravindra, Song, Baokun, Zhang, Huiqin, He, Jiale, Han, Myung-Geun, Hu, Weida, and Jariwala, Deep. Fri . "Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces". United States. doi:10.1021/acs.nanolett.0c00741.
@article{osti_1631937,
title = {Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces},
author = {Miao, Jinshui and Liu, Xiwen and Jo, Kiyoung and He, Kang and Saxena, Ravindra and Song, Baokun and Zhang, Huiqin and He, Jiale and Han, Myung-Geun and Hu, Weida and Jariwala, Deep},
abstractNote = {Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of “all-2D” vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures},
doi = {10.1021/acs.nanolett.0c00741},
journal = {Nano Letters},
number = 4,
volume = 20,
place = {United States},
year = {2020},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on March 20, 2021
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share: