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Title: Modification of magnetocrystalline anisotropy via ion-implantation

Abstract

The ability to systematically modify the magnetic properties of epitaxial La0.7Sr0.3MnO3 thin films is demonstrated through the use of Ar+ ion implantation. With increasing implant dose, a uniaxial expansion of the c-axis of the unit cell leads to a transition from in-plane toward perpendicular magnetic anisotropy. Above a critical dose of 3 × 1013 Ar+/cm2, significant crystalline disorder exists leading to a decrease in the average Mn valence state and near complete suppression of magnetization. Combined with lithographic techniques, ion implantation enables the fabrication of magnetic spin textures consisting of adjacent regions with tunable magnetic anisotropy in complex oxide thin films.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3];  [4]; ORCiD logo [1]
  1. Univ. of California, Davis, CA (United States)
  2. Univ. of California, Davis, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Cornell Univ., Ithaca, NY (United States). Cornell High Energy Synchrotron Source
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Science Foundation (NSF); Directorate for Mathematical & Physical Sciences
OSTI Identifier:
1631648
Alternate Identifier(s):
OSTI ID: 1607957
Grant/Contract Number:  
AC02-05CH11231; DMR 1411250; 1745450
Resource Type:
Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 10; Journal Issue: 4; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lee, Michael S., Chopdekar, Rajesh V., Shafer, Padraic, Arenholz, Elke, and Takamura, Yayoi. Modification of magnetocrystalline anisotropy via ion-implantation. United States: N. p., 2020. Web. doi:10.1063/1.5134867.
Lee, Michael S., Chopdekar, Rajesh V., Shafer, Padraic, Arenholz, Elke, & Takamura, Yayoi. Modification of magnetocrystalline anisotropy via ion-implantation. United States. https://doi.org/10.1063/1.5134867
Lee, Michael S., Chopdekar, Rajesh V., Shafer, Padraic, Arenholz, Elke, and Takamura, Yayoi. Wed . "Modification of magnetocrystalline anisotropy via ion-implantation". United States. https://doi.org/10.1063/1.5134867. https://www.osti.gov/servlets/purl/1631648.
@article{osti_1631648,
title = {Modification of magnetocrystalline anisotropy via ion-implantation},
author = {Lee, Michael S. and Chopdekar, Rajesh V. and Shafer, Padraic and Arenholz, Elke and Takamura, Yayoi},
abstractNote = {The ability to systematically modify the magnetic properties of epitaxial La0.7Sr0.3MnO3 thin films is demonstrated through the use of Ar+ ion implantation. With increasing implant dose, a uniaxial expansion of the c-axis of the unit cell leads to a transition from in-plane toward perpendicular magnetic anisotropy. Above a critical dose of 3 × 1013 Ar+/cm2, significant crystalline disorder exists leading to a decrease in the average Mn valence state and near complete suppression of magnetization. Combined with lithographic techniques, ion implantation enables the fabrication of magnetic spin textures consisting of adjacent regions with tunable magnetic anisotropy in complex oxide thin films.},
doi = {10.1063/1.5134867},
journal = {AIP Advances},
number = 4,
volume = 10,
place = {United States},
year = {2020},
month = {4}
}

Journal Article:
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Cited by: 7 works
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Figures / Tables:

FIG. 1 FIG. 1: . (a) (002) Experimental ω–2θ scans (colored lines) and GID_sl fits (black lines) for implanted LSMO films on STO substrates. Labels correspond to the implantation dose in Ar/cm2. Film and substrate peaks are denoted with “f” and “s,” respectively. (b) Maximum c/a ratio for LSMO films on differentmore » substrates as a function of the implantation dose. Dotted lines are guides for the eye.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.