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Title: In situ x-ray studies of the incipient ZnO atomic layer deposition on In 0.53 Ga 0.47 As

Abstract

We describe in detail how ZnO films grow on In0.53Ga0.47As substrates by atomic layer deposition (ALD), employing a suite of in situ synchrotron x-ray techniques. Combining results from different measurements allows the distinguishment of three different growth behaviors: an initial, slow linear growth, often referred to as a growth delay (regime I), followed by a nonlinear growth (regime II), and finally, a steady, linear growth (regime III), the last of which is the self-limited growth behavior characteristic of ALD. By the end of regime I, the In0.53Ga0.47As surface is covered with an ultrathin, poorly ordered Zn oxide layer. The transition from regime I to II is clearly evidenced by the appearance in the x-ray absorption spectra of characteristic features of the wurtzite structure, as well as the nucleation and growth of ZnO grains (three-dimensional) on top of the poorly ordered Zn oxide layer. Regime II ends when the growth per cycle reaches a constant level. We show that the water pressure during growth has an impact on the duration of the growth delay (regime I), unlike the substrate temperature. In the regime of steady growth, we observe that the rate of deposition obtained for all temperatures inside the ALD windowmore » is 0.17 nm cy(-1). The deposition temperature has clear effects on the film texture and initial crystallization behavior, as well as the final crystallinity and thicknesses of the layers adjacent to the In0.53Ga0.47As substrate. Based on the experimental results and earlier ab initio calculations and Monte Carlo simulations of ZnO ALD on ZnO, we suggest reaction mechanisms consistent with our findings, and we present a model of growth starting from the very earliest stages of deposition to the steady growth regime.« less

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [4]; ORCiD logo [5]; ORCiD logo [1]
  1. Univ. Grenoble Alpes (France)
  2. Synchrotron SOLEIL (France)
  3. European Synchrotron Radiation Facility (ESRF), Grenoble (France)
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  5. Univ. de Toulon (France); Aix-Marseille Univ., Marseille (France); National Centre for Scientific Research-Mixed Organizations (CNRS-UMR), Paris (France)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1631588
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 4; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Structural properties; Semiconductors; Thin films; Chemical vapor deposition; Grazing incidence X-ray diffraction; X-ray absorption spectroscopy

Citation Formats

Skopin, E. V., Rapenne, L., Deschanvres, J. L., Blanquet, E., Ciatto, G., Pithan, L., Fong, D. D., Richard, M. -I., and Renevier, H.. In situ x-ray studies of the incipient ZnO atomic layer deposition on In0.53Ga0.47As. United States: N. p., 2020. Web. https://doi.org/10.1103/PhysRevMaterials.4.043403.
Skopin, E. V., Rapenne, L., Deschanvres, J. L., Blanquet, E., Ciatto, G., Pithan, L., Fong, D. D., Richard, M. -I., & Renevier, H.. In situ x-ray studies of the incipient ZnO atomic layer deposition on In0.53Ga0.47As. United States. https://doi.org/10.1103/PhysRevMaterials.4.043403
Skopin, E. V., Rapenne, L., Deschanvres, J. L., Blanquet, E., Ciatto, G., Pithan, L., Fong, D. D., Richard, M. -I., and Renevier, H.. Mon . "In situ x-ray studies of the incipient ZnO atomic layer deposition on In0.53Ga0.47As". United States. https://doi.org/10.1103/PhysRevMaterials.4.043403. https://www.osti.gov/servlets/purl/1631588.
@article{osti_1631588,
title = {In situ x-ray studies of the incipient ZnO atomic layer deposition on In0.53Ga0.47As},
author = {Skopin, E. V. and Rapenne, L. and Deschanvres, J. L. and Blanquet, E. and Ciatto, G. and Pithan, L. and Fong, D. D. and Richard, M. -I. and Renevier, H.},
abstractNote = {We describe in detail how ZnO films grow on In0.53Ga0.47As substrates by atomic layer deposition (ALD), employing a suite of in situ synchrotron x-ray techniques. Combining results from different measurements allows the distinguishment of three different growth behaviors: an initial, slow linear growth, often referred to as a growth delay (regime I), followed by a nonlinear growth (regime II), and finally, a steady, linear growth (regime III), the last of which is the self-limited growth behavior characteristic of ALD. By the end of regime I, the In0.53Ga0.47As surface is covered with an ultrathin, poorly ordered Zn oxide layer. The transition from regime I to II is clearly evidenced by the appearance in the x-ray absorption spectra of characteristic features of the wurtzite structure, as well as the nucleation and growth of ZnO grains (three-dimensional) on top of the poorly ordered Zn oxide layer. Regime II ends when the growth per cycle reaches a constant level. We show that the water pressure during growth has an impact on the duration of the growth delay (regime I), unlike the substrate temperature. In the regime of steady growth, we observe that the rate of deposition obtained for all temperatures inside the ALD window is 0.17 nm cy(-1). The deposition temperature has clear effects on the film texture and initial crystallization behavior, as well as the final crystallinity and thicknesses of the layers adjacent to the In0.53Ga0.47As substrate. Based on the experimental results and earlier ab initio calculations and Monte Carlo simulations of ZnO ALD on ZnO, we suggest reaction mechanisms consistent with our findings, and we present a model of growth starting from the very earliest stages of deposition to the steady growth regime.},
doi = {10.1103/PhysRevMaterials.4.043403},
journal = {Physical Review Materials},
number = 4,
volume = 4,
place = {United States},
year = {2020},
month = {4}
}

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