Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, USA
Process-structure-transport relationships in low-temperature-processed, blade-coated In 2 O 3 transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm 2 V −1 s −1 is achieved at ≈220 °C.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1630772
- Journal Information:
- Materials Advances, Journal Name: Materials Advances Vol. 1 Journal Issue: 2; ISSN 2633-5409
- Publisher:
- Royal Society of Chemistry (RSC)Copyright Statement
- Country of Publication:
- United Kingdom
- Language:
- English
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