Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors
Abstract
Process-structure-transport relationships in low-temperature-processed, blade-coated In 2 O 3 transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm 2 V −1 s −1 is achieved at ≈220 °C.
- Authors:
-
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1630772
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Published Article
- Journal Name:
- Materials Advances
- Additional Journal Information:
- Journal Name: Materials Advances Journal Volume: 1 Journal Issue: 2; Journal ID: ISSN 2633-5409
- Publisher:
- Royal Society of Chemistry (RSC)
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Citation Formats
Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., and Richter, Lee J. Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors. Country unknown/Code not available: N. p., 2020.
Web. doi:10.1039/D0MA00072H.
Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., & Richter, Lee J. Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors. Country unknown/Code not available. https://doi.org/10.1039/D0MA00072H
Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., and Richter, Lee J. Tue .
"Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors". Country unknown/Code not available. https://doi.org/10.1039/D0MA00072H.
@article{osti_1630772,
title = {Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors},
author = {Kirmani, Ahmad R. and Roe, Emily F. and Stafford, Christopher M. and Richter, Lee J.},
abstractNote = {Process-structure-transport relationships in low-temperature-processed, blade-coated In 2 O 3 transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm 2 V −1 s −1 is achieved at ≈220 °C.},
doi = {10.1039/D0MA00072H},
journal = {Materials Advances},
number = 2,
volume = 1,
place = {Country unknown/Code not available},
year = {2020},
month = {5}
}
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https://doi.org/10.1039/D0MA00072H
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