Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors

Kirmani, Ahmad R.; Roe, Emily F.; Stafford, Christopher M.; Richter, Lee J.

doi:10.1039/D0MA00072H

Title: Role of the electronically-active amorphous state in low-temperature processed In ₂ O ₃ thin-film transistors

Abstract

Process-structure-transport relationships in low-temperature-processed, blade-coated In ₂ O ₃ transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm ² V ⁻¹ s ⁻¹ is achieved at ≈220 °C.

Authors:

^[1]; Roe, Emily F. ^[1];

^[1];

^[1]

Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, USA

Publication Date:: Tue May 26 00:00:00 EDT 2020

Sponsoring Org.:: USDOE

OSTI Identifier:: 1630772

Grant/Contract Number:: SC0012704

Resource Type:: Published Article

Journal Name:: Materials Advances

Additional Journal Information:: Journal Name: Materials Advances Journal Volume: 1 Journal Issue: 2; Journal ID: ISSN 2633-5409

Publisher:: Royal Society of Chemistry (RSC)

Country of Publication:: United Kingdom

Language:: English

Citation Formats


                    Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., and Richter, Lee J. Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors.  United Kingdom: N. p., 2020. 
Web.  doi:10.1039/D0MA00072H.

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                    Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., & Richter, Lee J. Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors.  United Kingdom.  https://doi.org/10.1039/D0MA00072H

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                    Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., and Richter, Lee J. Tue .  
"Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors".  United Kingdom.  https://doi.org/10.1039/D0MA00072H.

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@article{osti_1630772,

  title        = {Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors},

  author       = {Kirmani, Ahmad R. and Roe, Emily F. and Stafford, Christopher M. and Richter, Lee J.},

  abstractNote = {Process-structure-transport relationships in low-temperature-processed, blade-coated In 2 O 3 transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm 2 V −1 s −1 is achieved at ≈220 °C.},

  doi          = {10.1039/D0MA00072H},

  journal      = {Materials Advances},

  number       = 2,

  volume       = 1,

  place        = {United Kingdom},

  year         = {Tue May 26 00:00:00 EDT 2020},

  month        = {Tue May 26 00:00:00 EDT 2020}

}

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Title: Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors

Abstract

Citation Formats

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Title: Role of the electronically-active amorphous state in low-temperature processed In ₂ O ₃ thin-film transistors

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