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Title: Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors

Abstract

Process-structure-transport relationships in low-temperature-processed, blade-coated In 2 O 3 transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm 2 V −1 s −1 is achieved at ≈220 °C.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1630772
Grant/Contract Number:  
SC0012704
Resource Type:
Published Article
Journal Name:
Materials Advances
Additional Journal Information:
Journal Name: Materials Advances Journal Volume: 1 Journal Issue: 2; Journal ID: ISSN 2633-5409
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
Country unknown/Code not available
Language:
English

Citation Formats

Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., and Richter, Lee J. Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors. Country unknown/Code not available: N. p., 2020. Web. https://doi.org/10.1039/D0MA00072H.
Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., & Richter, Lee J. Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors. Country unknown/Code not available. https://doi.org/10.1039/D0MA00072H
Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., and Richter, Lee J. Tue . "Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors". Country unknown/Code not available. https://doi.org/10.1039/D0MA00072H.
@article{osti_1630772,
title = {Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors},
author = {Kirmani, Ahmad R. and Roe, Emily F. and Stafford, Christopher M. and Richter, Lee J.},
abstractNote = {Process-structure-transport relationships in low-temperature-processed, blade-coated In 2 O 3 transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm 2 V −1 s −1 is achieved at ≈220 °C.},
doi = {10.1039/D0MA00072H},
journal = {Materials Advances},
number = 2,
volume = 1,
place = {Country unknown/Code not available},
year = {2020},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1039/D0MA00072H

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