Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors

Kirmani, Ahmad R.; Roe, Emily F.; Stafford, Christopher M.; Richter, Lee J.

doi:10.1039/D0MA00072H

Title: Role of the electronically-active amorphous state in low-temperature processed In ₂ O ₃ thin-film transistors

Abstract

Process-structure-transport relationships in low-temperature-processed, blade-coated In ₂ O ₃ transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm ² V ⁻¹ s ⁻¹ is achieved at ≈220 °C.

Authors:

^[1]; Roe, Emily F. ^[1];

^[1];

^[1]

Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, USA

Publication Date:: 2020-05-26

Sponsoring Org.:: USDOE

OSTI Identifier:: 1630772

Grant/Contract Number:: SC0012704

Resource Type:: Published Article

Journal Name:: Materials Advances

Additional Journal Information:: Journal Name: Materials Advances Journal Volume: 1 Journal Issue: 2; Journal ID: ISSN 2633-5409

Publisher:: Royal Society of Chemistry (RSC)

Country of Publication:: Country unknown/Code not available

Language:: English

Citation Formats


                    Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., and Richter, Lee J. Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors.  Country unknown/Code not available: N. p., 2020. 
Web.  doi:10.1039/D0MA00072H.

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                    Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., & Richter, Lee J. Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors.  Country unknown/Code not available.  https://doi.org/10.1039/D0MA00072H

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                    Kirmani, Ahmad R., Roe, Emily F., Stafford, Christopher M., and Richter, Lee J. Tue .  
"Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors".  Country unknown/Code not available.  https://doi.org/10.1039/D0MA00072H.

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@article{osti_1630772,

  title        = {Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors},

  author       = {Kirmani, Ahmad R. and Roe, Emily F. and Stafford, Christopher M. and Richter, Lee J.},

  abstractNote = {Process-structure-transport relationships in low-temperature-processed, blade-coated In 2 O 3 transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm 2 V −1 s −1 is achieved at ≈220 °C.},

  doi          = {10.1039/D0MA00072H},

  journal      = {Materials Advances},

  number       = 2,

  volume       = 1,

  place        = {Country unknown/Code not available},

  year         = {2020},

  month        = {5}

}

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Works referenced in this record:

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors
journal, March 2015

Yu, Xinge; Smith, Jeremy; Zhou, Nanjia
Proceedings of the National Academy of Sciences, Vol. 112, Issue 11
DOI: 10.1073/pnas.1501548112

Kinetics of the self-assembly of nanocrystal superlattices measured by real-time in situ X-ray scattering
journal, March 2016

Weidman, Mark C.; Smilgies, Detlef-M.; Tisdale, William A.
Nature Materials, Vol. 15, Issue 7
DOI: 10.1038/nmat4600

Stacked indium oxide/zinc oxide heterostructures as semiconductors in thin film transistor devices: a case study using atomic layer deposition
journal, January 2018

Sanctis, Shawn; Krausmann, Jan; Guhl, Conrad
Journal of Materials Chemistry C, Vol. 6, Issue 3
DOI: 10.1039/C7TC03724D

Oxygen “Getter” Effects on Microstructure and Carrier Transport in Low Temperature Combustion-Processed a-InXZnO (X = Ga, Sc, Y, La) Transistors
journal, July 2013

Hennek, Jonathan W.; Smith, Jeremy; Yan, Aiming
Journal of the American Chemical Society, Vol. 135, Issue 29
DOI: 10.1021/ja403586x

Exploring the Leidenfrost Effect for the Deposition of High-Quality In ₂ O ₃ Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors
journal, April 2017

Isakov, Ivan; Faber, Hendrik; Grell, Max
Advanced Functional Materials, Vol. 27, Issue 22
DOI: 10.1002/adfm.201606407

Metal Composition and Polyethylenimine Doping Capacity Effects on Semiconducting Metal Oxide–Polymer Blend Charge Transport
journal, April 2018

Huang, Wei; Guo, Peijun; Zeng, Li
Journal of the American Chemical Society, Vol. 140, Issue 16
DOI: 10.1021/jacs.8b01252

Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors: Interplay of Experiment and Theory
journal, September 2018

Zhang, Xinan; Wang, Binghao; Huang, Wei
Journal of the American Chemical Society, Vol. 140, Issue 39
DOI: 10.1021/jacs.8b06395

Space- and time-resolved small angle X-ray scattering to probe assembly of silver nanocrystal superlattices
journal, October 2018

Yu, Yixuan; Yu, Dian; Sadigh, Babak
Nature Communications, Vol. 9, Issue 1
DOI: 10.1038/s41467-018-06734-9

Surface Characterization and Modification of Indium Tin Oxide in Ultrahigh Vacuum
journal, March 2000

Purvis, Kathleen L.; Lu, Gang; Schwartz, Jeffrey
Journal of the American Chemical Society, Vol. 122, Issue 8
DOI: 10.1021/ja992910q

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics
journal, April 2019

Wang, Binghao; Guo, Peijun; Zeng, Li
Proceedings of the National Academy of Sciences, Vol. 116, Issue 19
DOI: 10.1073/pnas.1901492116

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
journal, November 2004

Nomura, Kenji; Ohta, Hiromichi; Takagi, Akihiro
Nature, Vol. 432, Issue 7016, p. 488-492
DOI: 10.1038/nature03090

Nonhydrolytic Sol−Gel Routes to Oxides
journal, November 1997

Vioux, A.
Chemistry of Materials, Vol. 9, Issue 11
DOI: 10.1021/cm970322a

Generating thickness gradients of thin polymer films via flow coating
journal, February 2006

Stafford, Christopher M.; Roskov, Kristen E.; Epps, Thomas H.
Review of Scientific Instruments, Vol. 77, Issue 2
DOI: 10.1063/1.2173072

The Structure and Properties of Amorphous Indium Oxide
journal, September 2014

Buchholz, D. Bruce; Ma, Qing; Alducin, Diego
Chemistry of Materials, Vol. 26, Issue 18
DOI: 10.1021/cm502689x

Morphology changes upon scaling a high-efficiency, solution-processed solar cell
journal, January 2016

Ro, Hyun Wook; Downing, Jonathan M.; Engmann, Sebastian
Energy & Environmental Science, Vol. 9, Issue 9
DOI: 10.1039/C6EE01623E

Solution-Processed All-Oxide Transparent High-Performance Transistors Fabricated by Spray-Combustion Synthesis
journal, January 2016

Wang, Binghao; Yu, Xinge; Guo, Peijun
Advanced Electronic Materials, Vol. 2, Issue 4
DOI: 10.1002/aelm.201500427

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates
journal, April 2013

Hwan Hwang, Young; Seo, Jin-Suk; Moon Yun, Je
NPG Asia Materials, Vol. 5, Issue 4
DOI: 10.1038/am.2013.11

High-performance metal-oxide thin-film transistors based on inkjet-printed self-confined bilayer heterojunction channels
journal, January 2019

Liang, Kun; Wang, Yan; Shao, Shuangshuang
Journal of Materials Chemistry C, Vol. 7, Issue 20
DOI: 10.1039/C8TC06596A

Metal oxides for optoelectronic applications
journal, March 2016

Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio
Nature Materials, Vol. 15, Issue 4
DOI: 10.1038/nmat4599

Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis
journal, December 2014

Faber, Hendrik; Lin, Yen-Hung; Thomas, Stuart R.
ACS Applied Materials & Interfaces, Vol. 7, Issue 1
DOI: 10.1021/am5072139

Aptamer–field-effect transistors overcome Debye length limitations for small-molecule sensing
journal, September 2018

Nakatsuka, Nako; Yang, Kyung-Ae; Abendroth, John M.
Science, Vol. 362, Issue 6412
DOI: 10.1126/science.aao6750

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
journal, September 2012

Kim, Yong-Hoon; Heo, Jae-Sang; Kim, Tae-Hyeong
Nature, Vol. 489, Issue 7414
DOI: 10.1038/nature11434

Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory
journal, May 2010

Kamiya, Toshio; Nomura, Kenji; Hosono, Hideo
physica status solidi (a), Vol. 207, Issue 7
DOI: 10.1002/pssa.200983772

Thermal stability of amorphous Zn-In-Sn-O films
journal, September 2014

Proffit, Diana E.; Philippe, Thomas; Emery, Jonathan D.
Journal of Electroceramics, Vol. 34, Issue 2-3
DOI: 10.1007/s10832-014-9967-4

Ultra-Flexible, “Invisible” Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends
journal, February 2015

Yu, Xinge; Zeng, Li; Zhou, Nanjia
Advanced Materials, Vol. 27, Issue 14
DOI: 10.1002/adma.201405400

Characterization of Indium−Tin Oxide Interfaces Using X-ray Photoelectron Spectroscopy and Redox Processes of a Chemisorbed Probe Molecule: Effect of Surface Pretreatment Conditions
journal, January 2002

Donley, Carrie; Dunphy, Darren; Paine, David
Langmuir, Vol. 18, Issue 2
DOI: 10.1021/la011101t

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
journal, December 2010

Banger, K. K.; Yamashita, Y.; Mori, K.
Nature Materials, Vol. 10, Issue 1, p. 45-50
DOI: 10.1038/nmat2914

Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples
journal, May 1996

Hosono, Hideo; Kikuchi, Naoto; Ueda, Naoyuki
Journal of Non-Crystalline Solids, Vol. 198-200
DOI: 10.1016/0022-3093(96)80019-6

Combustion Synthesized Zinc Oxide Electron‐Transport Layers for Efficient and Stable Perovskite Solar Cells
journal, February 2019

Zheng, Ding; Wang, Gang; Huang, Wei
Advanced Functional Materials, Vol. 29, Issue 16
DOI: 10.1002/adfm.201900265

Overcoming the Ambient Manufacturability-Scalability-Performance Bottleneck in Colloidal Quantum Dot Photovoltaics
journal, July 2018

Kirmani, Ahmad R.; Sheikh, Arif D.; Niazi, Muhammad R.
Advanced Materials, Vol. 30, Issue 35
DOI: 10.1002/adma.201801661

Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor
journal, January 2015

Choi, Chang-Ho; Han, Seung-Yeol; Su, Yu-Wei
Journal of Materials Chemistry C, Vol. 3, Issue 4
DOI: 10.1039/C4TC01568A

Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport
journal, June 2016

Huang, Wei; Zeng, Li; Yu, Xinge
Advanced Functional Materials, Vol. 26, Issue 34
DOI: 10.1002/adfm.201602069

Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering
journal, May 2017

González, G. B.; Okasinski, J. S.; Buchholz, D. B.
Journal of Applied Physics, Vol. 121, Issue 20
DOI: 10.1063/1.4984054

Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications
journal, February 2015

Socratous, Josephine; Banger, Kulbinder K.; Vaynzof, Yana
Advanced Functional Materials, Vol. 25, Issue 12
DOI: 10.1002/adfm.201404375

Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
journal, April 2011

Kim, Myung-Gil; Kanatzidis, Mercouri G.; Facchetti, Antonio
Nature Materials, Vol. 10, Issue 5, p. 382-388
DOI: 10.1038/nmat3011

Processing, Structure, and Transistor Performance: Combustion versus Pulsed Laser Growth of Amorphous Oxides
journal, March 2019

Moffitt, Stephanie L.; Stallings, Katie L.; Falduto, Allison F.
ACS Applied Electronic Materials, Vol. 1, Issue 4
DOI: 10.1021/acsaelm.9b00012

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Title: Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors

Abstract

Citation Formats

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Title: Role of the electronically-active amorphous state in low-temperature processed In ₂ O ₃ thin-film transistors

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