Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors

Kirmani, Ahmad R.; Roe, Emily F.; Stafford, Christopher M.; Richter, Lee J.

doi:10.1039/D0MA00072H

Title: Role of the electronically-active amorphous state in low-temperature processed In ₂ O ₃ thin-film transistors

Journal Article · 26 May 2020 · Materials Advances

DOI: https://doi.org/10.1039/D0MA00072H · OSTI ID:1630772

^[1]; Roe, Emily F. ^[1];

^[1];

^[1]

Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, USA

Process-structure-transport relationships in low-temperature-processed, blade-coated In ₂ O ₃ transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm ² V ⁻¹ s ⁻¹ is achieved at ≈220 °C.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0012704

OSTI ID:: 1630772

Journal Information:: Materials Advances, Journal Name: Materials Advances Vol. 1 Journal Issue: 2; ISSN 2633-5409

Publisher:: Royal Society of Chemistry (RSC)Copyright Statement

Country of Publication:: United Kingdom

Language:: English

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Title: Role of the electronically-active amorphous state in low-temperature processed In ₂ O ₃ thin-film transistors