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Title: Role of the electronically-active amorphous state in low-temperature processed In 2 O 3 thin-film transistors

Journal Article · · Materials Advances
DOI: https://doi.org/10.1039/D0MA00072H · OSTI ID:1630772
ORCiD logo [1];  [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, USA
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Process-structure-transport relationships in low-temperature-processed, blade-coated In 2 O 3 transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm 2 V −1 s −1 is achieved at ≈220 °C.

Sponsoring Organization:
USDOE
Grant/Contract Number:
SC0012704
OSTI ID:
1630772
Journal Information:
Materials Advances, Journal Name: Materials Advances Journal Issue: 2 Vol. 1; ISSN MAADC9; ISSN 2633-5409
Publisher:
Royal Society of Chemistry (RSC)Copyright Statement
Country of Publication:
United Kingdom
Language:
English

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Aptamer–field-effect transistors overcome Debye length limitations for small-molecule sensing journal September 2018

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