Soft x-ray absorption spectroscopy and magnetic circular dichroism as operando probes of complex oxide electrolyte gate transistors

Yu, Biqiong; Yu, Guichuan; Walter, Jeff; Chaturvedi, Vipul; Gotchnik, Joseph; Hameed, Sajna; Freeland, John W.; Leighton, Chris; Greven, Martin

doi:10.1063/1.5138645

Title: Soft x-ray absorption spectroscopy and magnetic circular dichroism as operando probes of complex oxide electrolyte gate transistors

Journal Article · 21 May 2020 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5138645 · OSTI ID:1630373

Yu, Biqiong; Yu, Guichuan; Walter, Jeff; Chaturvedi, Vipul; Gotchnik, Joseph; Hameed, Sajna; Freeland, John W.;

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Electrolyte-based transistors utilizing ionic liquids/gels have been highly successful in the study of charge-density-controlled phenomena, particularly in oxides. Experimental probes beyond transport have played a significant role, despite challenges in their application in electric double-layer transistors. Here, we demonstrate the application of synchrotron soft x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) as operando probes of the charge state and magnetism in ion-gel-gated ferromagnetic perovskite films. Electrochemical response via oxygen vacancies at positive gate bias in LaAlO3(001)/La0.5Sr0.5CoO3−δ is used as a test case. XAS/XMCD measurements of 4–25 unit-cell-thick films first probe the evolution of hole doping (from the O K-edge pre-peak) and ferromagnetism (at the Co L-edges), to establish a baseline. Operando soft XAS/XMCD of electrolyte-gated films is then demonstrated, using optimized spin-coated gels with a thickness of ∼1 μm and a specific composition. The application of gate voltages up to +4 V is shown to dramatically suppress the O K-edge XAS pre-peak intensity and Co L-edge XMCD, thus enabling the Co valence and ferromagnetism to be tracked upon gate-induced reduction. Soft XAS and XMCD, with appropriate electrolyte design, are thus established to be viable for the operando characterization of electrolyte-gated oxides.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1630373

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 116 Journal Issue: 20; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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