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Title: F4‐TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [1];  [1];  [5];  [1];  [4];  [1]; ORCiD logo [1]
  1. Department of Chemical EngineeringStanford University Stanford CA 94305 USA
  2. Department of Chemical EngineeringStanford University Stanford CA 94305 USA, Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea
  3. Department of ChemistryStanford University Stanford CA 94305 USA
  4. School of Chemistry and Chemical Engineering State Key Laboratory of Coordination ChemistryNanjing University Nanjing 210023 China
  5. Department of Chemical EngineeringStanford University Stanford CA 94305 USA, School of Chemistry and Chemical Engineering State Key Laboratory of Coordination ChemistryNanjing University Nanjing 210023 China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1630200
Grant/Contract Number:  
FA 9550‐18‐1‐0143
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials Journal Volume: 6 Journal Issue: 6; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United States
Language:
English

Citation Formats

Mun, Jaewan, Kang, Jiheong, Zheng, Yu, Luo, Shaochuan, Wu, Yilei, Gong, Huaxin, Lai, Jian‐Cheng, Wu, Hung‐Chin, Xue, Gi, Tok, Jeffrey B. ‐H., and Bao, Zhenan. F4‐TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability. United States: N. p., 2020. Web. doi:10.1002/aelm.202000251.
Mun, Jaewan, Kang, Jiheong, Zheng, Yu, Luo, Shaochuan, Wu, Yilei, Gong, Huaxin, Lai, Jian‐Cheng, Wu, Hung‐Chin, Xue, Gi, Tok, Jeffrey B. ‐H., & Bao, Zhenan. F4‐TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability. United States. doi:https://doi.org/10.1002/aelm.202000251
Mun, Jaewan, Kang, Jiheong, Zheng, Yu, Luo, Shaochuan, Wu, Yilei, Gong, Huaxin, Lai, Jian‐Cheng, Wu, Hung‐Chin, Xue, Gi, Tok, Jeffrey B. ‐H., and Bao, Zhenan. Mon . "F4‐TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability". United States. doi:https://doi.org/10.1002/aelm.202000251.
@article{osti_1630200,
title = {F4‐TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability},
author = {Mun, Jaewan and Kang, Jiheong and Zheng, Yu and Luo, Shaochuan and Wu, Yilei and Gong, Huaxin and Lai, Jian‐Cheng and Wu, Hung‐Chin and Xue, Gi and Tok, Jeffrey B. ‐H. and Bao, Zhenan},
abstractNote = {},
doi = {10.1002/aelm.202000251},
journal = {Advanced Electronic Materials},
number = 6,
volume = 6,
place = {United States},
year = {2020},
month = {5}
}

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