Title: Coherent acoustic control of a single silicon vacancy spin in diamond

Journal Article · · Nature Communications
 [1];  [2];  [2];  [2];  [2];  [3];  [2];  [2];  [2];  [4];  [4];  [2]
  1. Harvard Univ., Cambridge, MA (United States). John A. Paulson School of Engineering and Applied Sciences; DOE/OSTI
  2. Harvard Univ., Cambridge, MA (United States). John A. Paulson School of Engineering and Applied Sciences
  3. Harvard Univ., Cambridge, MA (United States). John A. Paulson School of Engineering and Applied Sciences; California Institute of Technology (CalTech), Pasadena, CA (United States). Alliance for Quantum Technologies (AQT). Division of Physics, Mathematics and Astronomy
  4. Univ. of Texas, Austin, TX (United States). Dept. of Physics
+ Show Author Affiliations

Phonons are considered to be universal quantum transducers due to their ability to couple to a wide variety of quantum systems. Among these systems, solid-state point defect spins are known for being long-lived optically accessible quantum memories. Recently, it has been shown that inversion-symmetric defects in diamond, such as the negatively charged silicon vacancy center (SiV), feature spin qubits that are highly susceptible to strain. Here, we leverage this strain response to achieve coherent and low-power acoustic control of a single SiV spin, and perform acoustically driven Ramsey interferometry of a single spin. Our results demonstrate an efficient method of spin control for these systems, offering a path towards strong spin-phonon coupling and phonon-mediated hybrid quantum systems.

Research Organization:
Univ. of Texas, Austin, TX (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
SC0019219
OSTI ID:
1629788
Journal Information:
Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 11; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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