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Title: Molecular Dynamics Calculations of Grain Boundary Mobility in CdTe

Abstract

Molecular dynamics (MD) simulations have been applied to study mobilities of Σ3, Σ7 and Σ11 grain boundaries in CdTe. First, an existing MD approach to drive the motion of grain boundaries in face-centered-cubic and body-centered-cubic crystals was generalized for arbitrary crystals. MD simulations were next performed to calculate grain boundary velocities in CdTe crystals at different temperatures, driving forces, and grain boundary terminations. Here a grain boundary is said to be Te-terminated if its migration encounters sequentially C d · T e C d · T e … planes, where “·” and “−” represent short and long spacing respectively. Likewise, a grain boundary is said to be Cd-terminated if its migration encounters sequentially T e · C d T e · C d … planes. Grain boundary mobility laws, suitable for engineering time and length scales, were then obtained by fitting the MD results to Arrhenius equation. These studies indicated that the Σ3 grain boundary has significantly lower mobility than the Σ7 and Σ11 grain boundaries. The Σ7 Te-terminated grain boundary has lower mobility than the Σ7 Cd-terminated grain boundary, and that the Σ11 Cd-terminated grain boundary has lower mobility than the Σ11 Te-terminated grain boundary.

Authors:
 [1];  [1]; ORCiD logo [2];  [1]
  1. Department of Electrical and Computer Engineering, University of Texas at El Paso, El Paso, TX 79968, USA
  2. Mechanics of Materials Department, Sandia National Laboratories, Livermore, CA 94550, USA
Publication Date:
Research Org.:
Univ. of Texas at El Paso, TX (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)
OSTI Identifier:
1628506
Grant/Contract Number:  
EE0005958; ACI-1053575
Resource Type:
Accepted Manuscript
Journal Name:
Nanomaterials
Additional Journal Information:
Journal Volume: 9; Journal Issue: 4; Journal ID: ISSN 2079-4991
Publisher:
MDPI
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Science & Technology - Other Topics; Materials Science

Citation Formats

Aguirre, Rodolfo, Abdullah, Sharmin, Zhou, Xiaowang, and Zubia, David. Molecular Dynamics Calculations of Grain Boundary Mobility in CdTe. United States: N. p., 2019. Web. doi:10.3390/nano9040552.
Aguirre, Rodolfo, Abdullah, Sharmin, Zhou, Xiaowang, & Zubia, David. Molecular Dynamics Calculations of Grain Boundary Mobility in CdTe. United States. https://doi.org/10.3390/nano9040552
Aguirre, Rodolfo, Abdullah, Sharmin, Zhou, Xiaowang, and Zubia, David. Mon . "Molecular Dynamics Calculations of Grain Boundary Mobility in CdTe". United States. https://doi.org/10.3390/nano9040552. https://www.osti.gov/servlets/purl/1628506.
@article{osti_1628506,
title = {Molecular Dynamics Calculations of Grain Boundary Mobility in CdTe},
author = {Aguirre, Rodolfo and Abdullah, Sharmin and Zhou, Xiaowang and Zubia, David},
abstractNote = {Molecular dynamics (MD) simulations have been applied to study mobilities of Σ3, Σ7 and Σ11 grain boundaries in CdTe. First, an existing MD approach to drive the motion of grain boundaries in face-centered-cubic and body-centered-cubic crystals was generalized for arbitrary crystals. MD simulations were next performed to calculate grain boundary velocities in CdTe crystals at different temperatures, driving forces, and grain boundary terminations. Here a grain boundary is said to be Te-terminated if its migration encounters sequentially C d · T e − C d · T e … planes, where “·” and “−” represent short and long spacing respectively. Likewise, a grain boundary is said to be Cd-terminated if its migration encounters sequentially T e · C d − T e · C d … planes. Grain boundary mobility laws, suitable for engineering time and length scales, were then obtained by fitting the MD results to Arrhenius equation. These studies indicated that the Σ3 grain boundary has significantly lower mobility than the Σ7 and Σ11 grain boundaries. The Σ7 Te-terminated grain boundary has lower mobility than the Σ7 Cd-terminated grain boundary, and that the Σ11 Cd-terminated grain boundary has lower mobility than the Σ11 Te-terminated grain boundary.},
doi = {10.3390/nano9040552},
journal = {Nanomaterials},
number = 4,
volume = 9,
place = {United States},
year = {Mon Apr 01 00:00:00 EDT 2019},
month = {Mon Apr 01 00:00:00 EDT 2019}
}

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