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Title: ZnO Luminescence and scintillation studied via photoexcitation, X-ray excitation and gamma-induced positron spectroscopy

Abstract

The luminescence and scintillation properties of ZnO single crystals were studied by photoluminescence and X-ray-induced luminescence (XRIL) techniques. XRIL allowed a direct comparison to be made between the near-band emission (NBE) and trap emissions providing insight into the carrier recombination efficiency in the ZnO crystals. It also provided bulk luminescence measurements that were not affected by surface states. The origin of a green emission, the dominant trap emission in ZnO, was then investigated by gamma-induced positron spectroscopy (GIPS) - a unique defect spectroscopy method that enables positron lifetime measurements to be made for a sample without contributions from positron annihilation in the source materials. The measurements showed a single positron decay curve with a 175 ps lifetime component that was attributed to Zn vacancies passivated by hydrogen. Both oxygen vacancies and hydrogen-decorated Zn vacancies were suggested to contribute to the green emission. By combining scintillation measurements with XRIL, the fast scintillation in ZnO crystals was found to be strongly correlated with the ratio between the defect luminescence and NBE. This study reports the first application of GIPS to semiconductors and it reveals the great benefits of the XRIL technique for the study of emission and scintillation properties of materials.

Authors:
 [1];  [2];  [3];  [4];  [5];  [6];  [7];  [5];  [8];  [9];  [10]
+ Show Author Affiliations
  1. Bowling Green State Univ., OH (United States). Dept. of Physics and Astronomy
  2. Bowling Green State Univ., OH (United States). Dept. of Physics and Astronomy
  3. Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany). Institute of Radiation Physics
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  5. Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany). Institute of Radiation Physics
  6. Bowling Green State Univ., OH (United States). Center for Photochemical Sciences
  7. Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany). Institute of Radiation Physics; Technische Universität Dresden, Dresden,(Germany)
  8. Martin-Luther University, Halle (Germany). Dept. of Physics
  9. Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany). Institute of Radiation Physics; Technische Universität Dresden, Dresden,(Germany)
  10. Bowling Green State Univ., OH (United States). Dept. of Physics and Astronomy; Bowling Green State Univ., OH (United States). Center for Photochemical Sciences
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1624847
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
Science & Technology - Other Topics

Citation Formats

Ji, J., Colosimo, A. M., Anwand, W., Boatner, L. A., Wagner, A., Stepanov, P. S., Trinh, T. T., Liedke, M. O., Krause-Rehberg, R., Cowan, T. E., and Selim, F. A. ZnO Luminescence and scintillation studied via photoexcitation, X-ray excitation and gamma-induced positron spectroscopy. United States: N. p., 2016. Web. doi:10.1038/srep31238.
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Ji, J., Colosimo, A. M., Anwand, W., Boatner, L. A., Wagner, A., Stepanov, P. S., Trinh, T. T., Liedke, M. O., Krause-Rehberg, R., Cowan, T. E., & Selim, F. A. ZnO Luminescence and scintillation studied via photoexcitation, X-ray excitation and gamma-induced positron spectroscopy. United States. https://doi.org/10.1038/srep31238
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Ji, J., Colosimo, A. M., Anwand, W., Boatner, L. A., Wagner, A., Stepanov, P. S., Trinh, T. T., Liedke, M. O., Krause-Rehberg, R., Cowan, T. E., and Selim, F. A. Tue . "ZnO Luminescence and scintillation studied via photoexcitation, X-ray excitation and gamma-induced positron spectroscopy". United States. https://doi.org/10.1038/srep31238. https://www.osti.gov/servlets/purl/1624847.
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@article{osti_1624847,
title = {ZnO Luminescence and scintillation studied via photoexcitation, X-ray excitation and gamma-induced positron spectroscopy},
author = {Ji, J. and Colosimo, A. M. and Anwand, W. and Boatner, L. A. and Wagner, A. and Stepanov, P. S. and Trinh, T. T. and Liedke, M. O. and Krause-Rehberg, R. and Cowan, T. E. and Selim, F. A.},
abstractNote = {The luminescence and scintillation properties of ZnO single crystals were studied by photoluminescence and X-ray-induced luminescence (XRIL) techniques. XRIL allowed a direct comparison to be made between the near-band emission (NBE) and trap emissions providing insight into the carrier recombination efficiency in the ZnO crystals. It also provided bulk luminescence measurements that were not affected by surface states. The origin of a green emission, the dominant trap emission in ZnO, was then investigated by gamma-induced positron spectroscopy (GIPS) - a unique defect spectroscopy method that enables positron lifetime measurements to be made for a sample without contributions from positron annihilation in the source materials. The measurements showed a single positron decay curve with a 175 ps lifetime component that was attributed to Zn vacancies passivated by hydrogen. Both oxygen vacancies and hydrogen-decorated Zn vacancies were suggested to contribute to the green emission. By combining scintillation measurements with XRIL, the fast scintillation in ZnO crystals was found to be strongly correlated with the ratio between the defect luminescence and NBE. This study reports the first application of GIPS to semiconductors and it reveals the great benefits of the XRIL technique for the study of emission and scintillation properties of materials.},
doi = {10.1038/srep31238},
journal = {Scientific Reports},
number = 1,
volume = 6,
place = {United States},
year = {Tue Aug 23 00:00:00 EDT 2016},
month = {Tue Aug 23 00:00:00 EDT 2016}
}
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https://doi.org/10.1038/srep31238
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Figures / Tables:

Figure 1 Figure 1: Luminescence spectra of ZnO single crystals grown by CVD and measured using: (a) X-ray excitation, (b) and (c) photo-excitation.
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