Impact of pre-existing disorder on radiation defect dynamics in Si

Wallace, J. B.; Bayu Aji, L. B.; Shao, L.; Kucheyev, S. O.

doi:10.1038/s41598-019-48415-7

Title: Impact of pre-existing disorder on radiation defect dynamics in Si

Authors:

Wallace, J. B. ^[1]; Bayu Aji, L. B. ^[2]; Shao, L. ^[3]; Kucheyev, S. O. ^[2]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Texas A & M Univ., College Station, TX (United States)

Publication Date:: 2019-08-26

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE Office of Nuclear Energy (NE), Nuclear Energy Enabling Technology (NEET) Program; USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1624484

Alternate Identifier(s):: OSTI ID: 1840141

Report Number(s):: LLNL-JRNL-752721
Journal ID: ISSN 2045-2322; PII: 48415; TRN: US2200110

Grant/Contract Number:: AC52-07NA27344

Resource Type:: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; electronic devices; surfaces, interfaces and thin films; materials science

Citation Formats


                    Wallace, J. B., Bayu Aji, L. B., Shao, L., and Kucheyev, S. O. Impact of pre-existing disorder on radiation defect dynamics in Si.  United States: N. p., 2019. 
Web.  doi:10.1038/s41598-019-48415-7.

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                    Wallace, J. B., Bayu Aji, L. B., Shao, L., & Kucheyev, S. O. Impact of pre-existing disorder on radiation defect dynamics in Si.  United States.  https://doi.org/10.1038/s41598-019-48415-7

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                    Wallace, J. B., Bayu Aji, L. B., Shao, L., and Kucheyev, S. O. Mon .  
"Impact of pre-existing disorder on radiation defect dynamics in Si".  United States.  https://doi.org/10.1038/s41598-019-48415-7.  https://www.osti.gov/servlets/purl/1624484.

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@article{osti_1624484,

  title        = {Impact of pre-existing disorder on radiation defect dynamics in Si},

  author       = {Wallace, J. B. and Bayu Aji, L. B. and Shao, L. and Kucheyev, S. O.},

  abstractNote = {},

  doi          = {10.1038/s41598-019-48415-7},

  journal      = {Scientific Reports},

  number       = 1,

  volume       = 9,

  place        = {United States},

  year         = {2019},

  month        = {8}

}

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https://doi.org/10.1038/s41598-019-48415-7

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Figures / Tables:

Figure 1: Selected depth profiles of relative disorder for pulsed 500 keV Ar ion beam irradiation of (a) pristine Si, (b) Si with pre-existing defect clusters created by continuous beam irradiation to a dose of 4.5 × 10¹⁴cm⁻², and (c) Si with the 500- °C-clamshell defect. Values of t_offmore »

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Figures / Tables found in this record:

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

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Similar Records

Title: Impact of pre-existing disorder on radiation defect dynamics in Si

Citation Formats

Figures / Tables:

Ion-beam-induced amorphization and dynamic annealing processes in silicon journal, March 1990

Instability of irradiation induced defects in nanostructured materials journal, May 1997

Theory and experimental background on dimensional changes in irradiated alloys journal, October 1994

Radiation defect dynamics in Si at room temperature studied by pulsed ion beams journal, October 2015

Threshold energy determination in thick semiconductor samples journal, January 1976

The Displacement of Atoms in Solids by Radiation journal, January 1955

Some new aspects for the evaluation of disorder profiles in silicon by backscattering journal, January 1973

Efficient Annealing of Radiation Damage Near Grain Boundaries via Interstitial Emission journal, March 2010

Involvement of oxygen‐vacancy defects in enhancing oxygen diffusion in silicon journal, August 1986

Effects of irradiation on the microstructure and mechanical properties of nanostructured materials journal, February 2005

Defect microstructure in heavy-ion-bombarded (0001) ZnO journal, October 2012

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon journal, May 1997

Ion irradiation effects in nanocrystalline TiN coatings journal, August 2007

Accumulation and recovery of defects in ion-irradiated nanocrystalline gold journal, September 2001

Interface-mediated suppression of radiation damage in GaN journal, July 2012

Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship journal, October 2004

Response of nanocrystalline 3 C silicon carbide to heavy-ion irradiation journal, October 2009

Effects of collision cascade density on radiation defect dynamics in 3C-SiC journal, March 2017

A systematic analysis of defects in ion-implanted silicon journal, January 1988

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si journal, January 2017

SRIM – The stopping and range of ions in matter (2010) journal, June 2010

Preferential Amorphization at Extended Defects of Self-Ion-Irradiated Silicon journal, January 1999

The kinetics of migration of point defects to dislocations journal, January 1970

Hydrogen in Si: Diffusion and shallow impurity deactivation journal, September 1987

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si journal, August 2012

Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si journal, May 2018

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide journal, August 2016

Dynamic annealing in Ge studied by pulsed ion beams journal, October 2017

Light particle irradiation effects in Si nanocrystals journal, January 1999

Time constant of defect relaxation in ion-irradiated 3C-SiC journal, May 2015

Ion-irradiation-induced preferential amorphization of Ge nanocrystals in silica journal, March 2005

Defect accumulation during room temperature N+ irradiation of silicon journal, December 1996

Ion-beam-induced amorphization and dynamic annealing processes in silicon
journal, March 1990

Instability of irradiation induced defects in nanostructured materials
journal, May 1997

Theory and experimental background on dimensional changes in irradiated alloys
journal, October 1994

Radiation defect dynamics in Si at room temperature studied by pulsed ion beams
journal, October 2015

Threshold energy determination in thick semiconductor samples
journal, January 1976

The Displacement of Atoms in Solids by Radiation
journal, January 1955

Some new aspects for the evaluation of disorder profiles in silicon by backscattering
journal, January 1973

Efficient Annealing of Radiation Damage Near Grain Boundaries via Interstitial Emission
journal, March 2010

Involvement of oxygen‐vacancy defects in enhancing oxygen diffusion in silicon
journal, August 1986

Effects of irradiation on the microstructure and mechanical properties of nanostructured materials
journal, February 2005

Defect microstructure in heavy-ion-bombarded (0001) ZnO
journal, October 2012

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
journal, May 1997

Ion irradiation effects in nanocrystalline TiN coatings
journal, August 2007

Accumulation and recovery of defects in ion-irradiated nanocrystalline gold
journal, September 2001

Interface-mediated suppression of radiation damage in GaN
journal, July 2012

Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship
journal, October 2004

Response of nanocrystalline $3 C$ silicon carbide to heavy-ion irradiation
journal, October 2009

Effects of collision cascade density on radiation defect dynamics in 3C-SiC
journal, March 2017

A systematic analysis of defects in ion-implanted silicon
journal, January 1988

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si
journal, January 2017

SRIM – The stopping and range of ions in matter (2010)
journal, June 2010

Preferential Amorphization at Extended Defects of Self-Ion-Irradiated Silicon
journal, January 1999

The kinetics of migration of point defects to dislocations
journal, January 1970

Hydrogen in Si: Diffusion and shallow impurity deactivation
journal, September 1987

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si
journal, August 2012

Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si
journal, May 2018

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide
journal, August 2016

Dynamic annealing in Ge studied by pulsed ion beams
journal, October 2017

Light particle irradiation effects in Si nanocrystals
journal, January 1999

Time constant of defect relaxation in ion-irradiated 3C-SiC
journal, May 2015

Ion-irradiation-induced preferential amorphization of Ge nanocrystals in silica
journal, March 2005

Defect accumulation during room temperature N+ irradiation of silicon
journal, December 1996