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Title: Impact of pre-existing disorder on radiation defect dynamics in Si

Abstract

The effect of pre-existing lattice defects on radiation defect dynamics in solids remains unexplored. Here, we use a pulsed beam method to measure the time constant of defect relaxation for 500 keV Ar ion bombardment of Si at 100 °C with the following two representative types of pre- existing lattice disorder: (i) point defect clusters and (ii) so-called “clamshell” defects consisting of a high density of dislocations. Results show that point defect clusters slow down defect relaxation processes, while regions with dislocations exhibit faster defect interaction dynamics. These experimental observations demonstrate that the dynamic aspects of damage buildup, attributed to defect trapping-detrapping processes, can be controlled by defect engineering.

Authors:
 [1];  [2];  [3];  [2]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  3. Texas A & M Univ., College Station, TX (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE), Nuclear Energy Enabling Technology (NEET) Program
OSTI Identifier:
1624484
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; Science & Technology - Other Topics

Citation Formats

Wallace, J. B., Bayu Aji, L. B., Shao, L., and Kucheyev, S. O. Impact of pre-existing disorder on radiation defect dynamics in Si. United States: N. p., 2019. Web. https://doi.org/10.1038/s41598-019-48415-7.
Wallace, J. B., Bayu Aji, L. B., Shao, L., & Kucheyev, S. O. Impact of pre-existing disorder on radiation defect dynamics in Si. United States. https://doi.org/10.1038/s41598-019-48415-7
Wallace, J. B., Bayu Aji, L. B., Shao, L., and Kucheyev, S. O. Mon . "Impact of pre-existing disorder on radiation defect dynamics in Si". United States. https://doi.org/10.1038/s41598-019-48415-7. https://www.osti.gov/servlets/purl/1624484.
@article{osti_1624484,
title = {Impact of pre-existing disorder on radiation defect dynamics in Si},
author = {Wallace, J. B. and Bayu Aji, L. B. and Shao, L. and Kucheyev, S. O.},
abstractNote = {The effect of pre-existing lattice defects on radiation defect dynamics in solids remains unexplored. Here, we use a pulsed beam method to measure the time constant of defect relaxation for 500 keV Ar ion bombardment of Si at 100 °C with the following two representative types of pre- existing lattice disorder: (i) point defect clusters and (ii) so-called “clamshell” defects consisting of a high density of dislocations. Results show that point defect clusters slow down defect relaxation processes, while regions with dislocations exhibit faster defect interaction dynamics. These experimental observations demonstrate that the dynamic aspects of damage buildup, attributed to defect trapping-detrapping processes, can be controlled by defect engineering.},
doi = {10.1038/s41598-019-48415-7},
journal = {Scientific Reports},
number = 1,
volume = 9,
place = {United States},
year = {2019},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 2 works
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Figures / Tables:

Figure 1 Figure 1: Selected depth profiles of relative disorder for pulsed 500 keV Ar ion beam irradiation of (a) pristine Si, (b) Si with pre-existing defect clusters created by continuous beam irradiation to a dose of 4.5 × 1014 cm−2, and (c) Si with the 500- °C-clamshell defect. Values of toffmore » (in milliseconds) are given in legends. The defect state prior to pulsed beam irradiation is shown by solid circles and labeled “Initial state” in (b) and (c). For clarity, only every 10th experimental point is depicted in all the profiles. The inset in (a) is a schematic of the time dependence of the instantaneous dose rate for pulsed beam irradiation, defining ton, toff, and Fon. The total doses of pulsed Ar ions were 8.8x, 6.5x, and 8.0 x 1014 cm−2 in (a–c), respectively.« less

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.