Impact of pre-existing disorder on radiation defect dynamics in Si

Wallace, J. B.; Bayu Aji, L. B.; Shao, L.; Kucheyev, S. O.

doi:10.1038/s41598-019-48415-7

Title: Impact of pre-existing disorder on radiation defect dynamics in Si

Journal Article · 26 August 2019 · Scientific Reports

DOI: https://doi.org/10.1038/s41598-019-48415-7 · OSTI ID:1624484

Wallace, J. B. ^[1]; Bayu Aji, L. B. ^[2]; Shao, L. ^[3]; Kucheyev, S. O. ^[2]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States); DOE/OSTI
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Texas A & M Univ., College Station, TX (United States)

The effect of pre-existing lattice defects on radiation defect dynamics in solids remains unexplored. Here, we use a pulsed beam method to measure the time constant of defect relaxation for 500 keV Ar ion bombardment of Si at 100 °C with the following two representative types of pre- existing lattice disorder: (i) point defect clusters and (ii) so-called “clamshell” defects consisting of a high density of dislocations. Results show that point defect clusters slow down defect relaxation processes, while regions with dislocations exhibit faster defect interaction dynamics. These experimental observations demonstrate that the dynamic aspects of damage buildup, attributed to defect trapping-detrapping processes, can be controlled by defect engineering.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE), Nuclear Energy Enabling Technology (NEET) Program

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1624484

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 9; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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