Possible electric field induced indirect to direct band gap transition in MoSe2

Kim, B. S.; Kyung, W. S.; Seo, J. J.; Kwon, J. Y.; Denlinger, J. D.; Kim, C.; Park, S. R.

doi:10.1038/s41598-017-05613-5

Title: Possible electric field induced indirect to direct band gap transition in MoSe2

Journal Article · 12 July 2017 · Scientific Reports

DOI: https://doi.org/10.1038/s41598-017-05613-5 · OSTI ID:1624308

Kim, B. S. ^[1]; Kyung, W. S. ^[2]; Seo, J. J. ^[3]; Kwon, J. Y. ^[4]; Denlinger, J. D. ^[5]; Kim, C. ^[4]; Park, S. R. ^[6]

Seoul National Univ. (Korea, Republic of). Dept. of Physics and Astronomy; Inst. for Basic Science, Seoul (Korea, Republic of). Center for Correlated Electron Systems; Incheon National Univ. (Korea, Republic of). Dept. of Physics
Inst. for Basic Science, Seoul (Korea, Republic of). Center for Correlated Electron Systems; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Inst. for Basic Science, Seoul (Korea, Republic of). Center for Correlated Electron Systems; Yonsei Univ., Seoul (Korea, Republic of). Institute of Physics and Applied Physics (IPAP)
Seoul National Univ. (Korea, Republic of). Dept. of Physics and Astronomy; Inst. for Basic Science, Seoul (Korea, Republic of). Center for Correlated Electron Systems
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Incheon National Univ. (Korea, Republic of). Dept. of Physics

Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX2 (M=Mo, W; X=S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX2 have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX2 into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe2 that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe2. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe2, our data suggest that direct band-gap in MoSe2 can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1624308

Journal Information:: Scientific Reports, Vol. 7, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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